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16 条记录 (耗时 0.016 秒)

    Heterojunction device
    1.
    发明授权
    Heterojunction device 失效
    异质结装置

    公开(公告)号：US4641161A

    公开(公告)日：1987-02-03

    申请号：US656110

    申请日：1984-09-28

    申请人： Bumman Kim ,  Hua Q. Tserng

    发明人： Bumman Kim ,  Hua Q. Tserng

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/80

    CPC分类号： H01L29/802 ,  H01L29/1029

    摘要： A metal-insulator-semiconductor field effect transistor using an undoped AlGaAs layer as an insulator over an n-type GaAs channel. The high breakdown field of the wide-bandgap AlGaAs results in a very high gate breakdown voltage and a low prebreakdown gate leakage current. The presence of the gate insulator also reduces the gate capacitance, Cgs. Moreover, the electron density in the channel is not all concentrated next to the heterojunction, which means that the series resistance of the channel is low, and also means that channel mobility will not be degraded by a less-than-perfect interface at the heterojunction.

    摘要翻译： 在n型GaAs沟道上使用未掺杂的AlGaAs层作为绝缘体的金属 - 绝缘体 - 半导体场效应晶体管。 宽带隙AlGaAs的高击穿场导致非常高的栅极击穿电压和低的预破坏栅极漏电流。 栅极绝缘体的存在也降低了栅极电容Cgs。 此外，通道中的电子密度并不都集中在异质结旁边，这意味着通道的串联电阻低，并且还意味着通道异质结处的不完全界面不会降低通道迁移率 。

    Power MISFET
    2.
    发明授权
    Power MISFET 失效
    电源MISFET

    公开(公告)号：US4987462A

    公开(公告)日：1991-01-22

    申请号：US706

    申请日：1987-01-06

    申请人： Bumman Kim ,  Hua Q. Tserng

    发明人： Bumman Kim ,  Hua Q. Tserng

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7783

    摘要： Preferred embodiments include a microwave power MISFET (30) with a thin GaAS channel (54) bounded by an undoped Al.sub.x Ga.sub.1-x As gate insulator (44) and a doped Al.sub.y Ga.sub.1-y As barrier (40). Under forward bias the channel (54) forms a quantum well which accumulates electrons and thereby increase maximum current and power handling without degrading breakdown voltage of the heterostructure MISFET An additional active layer (36) can be included on the other side of the barrier (40) to further increase power handling. Other embodiments include use of a strained layer In.sub.z Ga.sub.1-z As channel.

    摘要翻译： 优选实施例包括具有由未掺杂的Al x Ga 1-x As栅极绝缘体（44）和掺杂的Al y Ga 1 -AsAs势垒（40）限定的薄GaAS沟道（54）的微波功率MISFET（30）。 在正向偏压下，通道（54）形成量子阱，其累积电子，从而增加最大电流和功率处理，而不降低异质结MISFET的击穿电压。另外的有源层（36）可以包含在屏障（40）的另一侧 ）进一步增加功率处理。 其他实施例包括使用应变层InzGa1-zAs通道。

    Travelling-wave microwave device
    3.
    发明授权
    Travelling-wave microwave device 失效
    行波微波设备

    公开(公告)号：US4733195A

    公开(公告)日：1988-03-22

    申请号：US885908

    申请日：1986-07-15

    申请人： Hua Q. Tserng ,  Bumman Kim

    发明人： Hua Q. Tserng ,  Bumman Kim

    IPC分类号： H01L21/338 ,  H01L29/812 ,  H03F3/60

    CPC分类号： H03F3/607

    摘要： A travelling-wave transistor structure (50) with the input and output transmission lines (54,58) terminated with unmatched impedances (70,72,74;80,82,84) to improve high-frequency response by reflection and phase shift to provide constructive interference is disclosed. Preferred embodiments include a .pi.-gate (52,56) MESFET structure travelling-wave transistor with many periodically spaced gate feeding fingers (56) connecting gate (52) to gate transmission line (54) which parallels gate (52). This provides a compact structure and has large advantages at millimeter wave frequencies. Source (60) may be grounded by vias (61) or may pass over gate transmission line (54) by air bridges to a ground on the same surface as the MESFET.

    摘要翻译： 具有输入和输出传输线（54,58）的行波晶体管结构（50）终止于不匹配的阻抗（70,72,74; 80,82,84），以通过反射和相移改善高频响应 提供建设性的干扰被披露。 优选实施例包括具有许多周期性间隔开的栅极馈送指状物（56）连接栅极（52）至与栅极（52）平行的栅极传输线（54）的引流（52,56）MESFET结构行波晶体管。 这提供了紧凑的结构，并且在毫米波频率下具有很大的优点。 源（60）可以通过通孔（61）接地，或者可以通过空气桥将栅极传输线（54）通过与MESFET相同的表面上的接地。

    Reactively compensated power transistor circuits
    4.
    发明授权
    Reactively compensated power transistor circuits 失效
    反应式补偿功率晶体管电路

    公开(公告)号：US5469108A

    公开(公告)日：1995-11-21

    申请号：US290252

    申请日：1994-08-15

    申请人： Hua Q. Tserng

    发明人： Hua Q. Tserng

    IPC分类号： H01L27/02 ,  H01L27/06 ,  H03F3/60 ,  H03F3/195 ,  H03F3/68

    CPC分类号： H01L27/0605 ,  H01L27/0207 ,  H03F3/604 ,  H03F3/605

    摘要： A circuit for compensating for the phase velocity differences caused by the layout arrangement of a high-frequency transistor circuit comprises a shunt reactive element 60 coupled to an input or output terminal 51 of a first transistor 48 in a sequence of transistors arranged between input 42 and output 54 transmission lines. The shunt reactive element provides adjustment in phase such that signals traversing various routes through the circuit add in phase at the circuit output. The circuit may also include series resonant circuits 102 between the input terminals 44 and 46 of transistors in such a sequence and between output terminals 51 and 52 of transistors in such a sequence. The series resonant circuits appear as short circuits at certain frequencies and thereby may be used to virtually eliminate the phase progression along transmission lines linking transistors in the sequence.

    摘要翻译： 用于补偿由高频晶体管电路的布局布置引起的相位速度差的电路包括分流电抗元件60，该分流电抗元件60以布置在输入端42和16之间的晶体管序列耦合到第一晶体管48的输入或输出端子51 输出54路传输线。 分流电抗元件提供相位调节，使得穿过电路的各种路径的信号在电路输出端相位相位相同。 该电路还可以包括在这样的顺序中的晶体管的输入端子44和46之间的串联谐振电路102，并且在这样的顺序中，晶体管的输出端子51和52之间。 串联谐振电路在某些频率处表现为短路，从而可以用于实际上消除沿序列连接晶体管的传输线的相位进展。

    GaAs monolithic waveguide switch
    5.
    发明授权
    GaAs monolithic waveguide switch 失效
    GaAs单片波导开关

    公开(公告)号：US5119052A

    公开(公告)日：1992-06-02

    申请号：US601557

    申请日：1990-10-23

    申请人： Larry C. Witkowski ,  Hua Q. Tserng ,  Robert C. Voges ,  Charles M. Rhoads ,  Oren B. Kesler

    发明人： Larry C. Witkowski ,  Hua Q. Tserng ,  Robert C. Voges ,  Charles M. Rhoads ,  Oren B. Kesler

    IPC分类号： H01P1/15 ,  H01P3/02 ,  H03K17/687

    CPC分类号： H01P1/15

    摘要： A GaAs monolithic waveguide switch and system for low power consumption and high frequency switching wherein a single GaAs chip is flip-chip mounted onto a waveguide slot and inserted between interconnecting waveguides to provide single pole single throw switching. The GaAs chip includes an array of MESFETs along with connecting electrodes configured to provide low loss in the biased state and high loss in the unbiased state. The use of a single GaAs monolithic chip provides improved RF performance and manufacturability over discrete devices and provides lower power consumption as compared with silicon PIN diode waveguide switches.

    摘要翻译： 一种用于低功耗和高频开关的GaAs单片波导开关和系统，其中单个GaAs芯片倒装芯片安装在波导槽上并插入互连波导之间，以提供单极单掷切换。 GaAs芯片包括MESFET阵列以及连接电极，连接电极被配置为在偏置状态下提供低损耗并且在无偏置状态下具有高损耗。 与硅PIN二极管波导开关相比，使用单个GaAs单片芯片提供了超过分立器件的RF性能和可制造性，并提供了更低的功耗。

    Microwave oscillator position sensor
    6.
    发明授权
    Microwave oscillator position sensor 失效
    微波振荡器位置传感器

    公开(公告)号：US5097227A

    公开(公告)日：1992-03-17

    申请号：US594504

    申请日：1990-10-09

    申请人： Han-Tzong Yuan ,  Hua Q. Tserng ,  Hung Y. Yee

    发明人： Han-Tzong Yuan ,  Hua Q. Tserng ,  Hung Y. Yee

    IPC分类号： H03B5/18 ,  H03B9/14 ,  H03K17/95

    CPC分类号： H03K17/9525 ,  H03B5/1852 ,  H03B2009/126 ,  H03B9/14

    摘要： A microwave oscillator circuit having an antenna, wherein the effective reactive impedance of the oscillator circuit is altered by the movement of a reactive impedance changing element past the antenna to cause change of the oscillation condition of the oscillator. A change in oscillation condition is sensed and sent to a utilization device to determine speed and/or position. The utilization device can be a computer which receives a signal from a wheel speed determining system, wherefrom a signal is sent back to a braking system for the wheel to control braking thereof. This can be accomplished individually for each of the four wheels to provide an anti-locking braking system.

    摘要翻译： 一种具有天线的微波振荡器电路，其中振荡器电路的有效无功阻抗由于无功阻抗变化元件通过天线的移动而改变，从而引起振荡器振荡条件的改变。 检测振荡条件的变化并将其发送到利用装置以确定速度和/或位置。 利用装置可以是接收来自车轮速度确定系统的信号的计算机，其中信号被发送回到用于车轮的制动系统以控制其制动。 这可以为四个车轮中的每一个单独实现，以提供防抱死制动系统。

    Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
    8.
    发明授权
    Depleted extrinsic emitter of collector-up heterojunction bipolar transistor 失效
    收集器异质结双极晶体管的外部发射极消失

    公开(公告)号：US5485025A

    公开(公告)日：1996-01-16

    申请号：US349343

    申请日：1994-12-02

    申请人： Hin F. Chau ,  Hua Q. Tserng

    发明人： Hin F. Chau ,  Hua Q. Tserng

    IPC分类号： H01L29/737 ,  H01L29/06 ,  H01L23/02 ,  H01L29/161 ,  H01L29/205

    CPC分类号： H01L29/7371 ,  Y10S148/01 ,  Y10S148/011 ,  Y10S148/072

    摘要： A collector-up bipolar transistor having an undercut region (522) beneath extrinsic regions of a base layer (510) and an emitter layer (508). The extrinsic emitter region is depleted of charge carriers and provides passivation for the extrinsic portion of the base layer (508). Contact to the emitter layer may be made by forming contacts on the top surface of the substrate (500) or in a recess in the backside of the substrate.

    摘要翻译： 集电极 - 双极晶体管，其在底层（510）和发射极层（508）的非本征区域之下具有底切区域（522）。 外部发射极区耗尽电荷载流子，并为基底层（508）的外部部分提供钝化。 可以通过在衬底（500）的顶表面上或在衬底的背面的凹部中形成接触来形成与发射极层的接触。

    GaAs FET with resistive AlGaAs
    10.
    发明授权
    GaAs FET with resistive AlGaAs 失效
    具有电阻AlGaAs的GaAs FET

    公开(公告)号：US5300795A

    公开(公告)日：1994-04-05

    申请号：US854169

    申请日：1992-03-20

    申请人： Paul Saunier ,  Hua Q. Tserng

    发明人： Paul Saunier ,  Hua Q. Tserng

    IPC分类号： H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/812 ,  H01L29/80 ,  H01L21/265 ,  H01L21/44 ,  H01L29/161

    CPC分类号： H01L29/1029 ,  H01L29/8128

    摘要： This is a FET device and the device comprises: a buffer layer 30; a channel layer 32 of doped narrow bandgap material over the buffer layer; and a resistive layer 34 of low doped wide bandgap material over the channel layer, the doping of the channel layer and the resistive layer being such that no significant transfer of electrons occurs between the resistive layer and the channel layer. This is also a method of making a FET device.

    摘要翻译： 这是一种FET器件，该器件包括：缓冲层30; 在缓冲层上的掺杂窄带隙材料的沟道层32; 以及在沟道层上的低掺杂宽带隙材料的电阻层34，沟道层和电阻层的掺杂使得在电阻层和沟道层之间不发生电子的显着转移。 这也是制造FET器件的方法。