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240 条记录 (耗时 0.023 秒)

    Integration methods for carbon films in two- and three-dimensional memories formed therefrom
    2.
    发明授权
    Integration methods for carbon films in two- and three-dimensional memories formed therefrom 有权
    由其形成的二维和三维记忆中的碳膜的积分方法

    公开(公告)号：US08093123B2

    公开(公告)日：2012-01-10

    申请号：US12541075

    申请日：2009-08-13

    申请人： Huiwen Xu ,  Er-Xuan Ping

    发明人： Huiwen Xu ,  Er-Xuan Ping

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/1052

    摘要： Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the pillar to form multiple memory cells. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.

    摘要翻译： 公开了形成存储器单元的方法，其包括在衬底上形成柱，所述柱包括转向元件和存储元件，并且通过柱垂直地执行一个或多个蚀刻以形成多个存储单元。 还公开了由这些方法形成的存储单元以及许多其它方面。

    METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING
    7.
    发明申请
    METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING 有权
    使用二极管共享增加记忆密度的方法和装置

    公开(公告)号：US20100038623A1

    公开(公告)日：2010-02-18

    申请号：US12541078

    申请日：2009-08-13

    申请人： Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

    发明人： Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

    IPC分类号： H01L47/00 ,  H01L21/44

    CPC分类号： H01L45/12 ,  H01L27/10 ,  H01L27/1021 ,  H01L27/1052 ,  H01L27/24 ,  H01L45/16

    摘要： Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.

    摘要翻译： 公开了形成存储器单元的方法，其包括在衬底上形成柱，所述柱包括操纵元件和存储元件，并且通过存储元件而不是导向元件垂直地执行一个或多个蚀刻，以形成多个存储单元 共享一个转向元件。 还公开了由这些方法形成的存储单元以及许多其它方面。

    CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME
    8.
    发明申请
    CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME 审中-公开
    基于碳的电阻率切换材料及其形成方法

    公开(公告)号：US20100012914A1

    公开(公告)日：2010-01-21

    申请号：US12505122

    申请日：2009-07-17

    申请人： Huiwen Xu ,  Er-Xuan Ping ,  Andy Fu

    发明人： Huiwen Xu ,  Er-Xuan Ping ,  Andy Fu

    IPC分类号： H01L47/00 ,  H01L21/00

    CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616

    摘要： Methods of forming memory devices, and memory devices formed in accordance with such methods, are provided, the methods including forming a via above a first conductive layer, forming a nonconformal carbon-based resistivity-switchable material layer in the via and coupled to the first conductive layer; and forming a second conductive layer in the via, above and coupled to the nonconformal carbon-based resistivity-switchable material layer. Numerous other aspects are provided.

    摘要翻译： 提供了形成存储器件的方法和根据这些方法形成的存储器件，所述方法包括在第一导电层上方形成通孔，在通孔中形成非共形的基于碳的电阻率可切换材料层并耦合到第一导电层 导电层; 并在上述通孔中形成第二导电层，并且连接到非共形的基于碳的电阻率可切换材料层。 提供了许多其他方面。

    Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
    9.
    发明授权
    Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same 有权
    包括与转向元件兼容的碳基可逆电阻开关元件的存储单元及其形成方法

    公开(公告)号：US08481396B2

    公开(公告)日：2013-07-09

    申请号：US12835236

    申请日：2010-07-13

    申请人： Huiwen Xu ,  Er-Xuan Ping ,  Xiying Costa ,  Thomas J. Kwon

    发明人： Huiwen Xu ,  Er-Xuan Ping ,  Xiying Costa ,  Thomas J. Kwon

    IPC分类号： H01L21/00

    CPC分类号： H01L45/1273 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1616 ,  H01L45/1691

    摘要： Memory cells, and methods of forming such memory cells, are provided that include a steering element coupled to a carbon-based reversible resistivity switching material that has an increased resistivity, and a switching current that is less than a maximum current capability of the steering element used to control current flow through the carbon-based reversible resistivity switching material. In particular embodiments, methods and apparatus in accordance with this invention form a steering element, such as a diode, having a first cross-sectional area, coupled to a reversible resistivity switching material, such as aC, having a region that has a second cross-sectional area smaller than the first cross-sectional area.

    摘要翻译： 提供了存储单元和形成这种存储单元的方法，其包括耦合到具有增加的电阻率的碳基可逆电阻率切换材料的转向元件和小于转向元件的最大电流能力的开关电流 用于控制通过碳基可逆电阻率开关材料的电流。 在具体实施例中，根据本发明的方法和装置形成具有第一横截面面积的转向元件，例如二极管，该第二横截面面积与可逆电阻率开关材料（例如aC）耦合，具有具有第二十字 切片面积小于第一横截面积。

    Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
    10.
    发明授权
    Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same 有权
    具有具有减小的横截面积的碳开关材料的存储单元及其形成方法

    公开(公告)号：US08471360B2

    公开(公告)日：2013-06-25

    申请号：US12760156

    申请日：2010-04-14

    申请人： Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

    发明人： Franz Kreupl ,  Er-Xuan Ping ,  Jingyan Zhang ,  Huiwen Xu

    IPC分类号： H01L29/92

    CPC分类号： H01L45/149 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1691

    摘要： In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

    摘要翻译： 在第一方面中，提供了形成金属 - 绝缘体 - 金属（“MIM”）叠层的方法，所述方法包括：（1）在开口内形成具有开口的电介质材料和第一导电碳层; （2）在开口中形成间隔物; （3）在间隔件的侧壁上形成碳基开关材料; 和（4）在碳基开关材料上形成第二导电碳层。 介电材料中的开口的横截面积与间隔件侧壁上的碳基开关材料的横截面积的比率至少为5.许多其它方面。