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    High voltage device embedded non-volatile memory cell and fabrication method
    1.
    发明申请
    High voltage device embedded non-volatile memory cell and fabrication method 有权
    高压器件嵌入式非易失性存储单元及制造方法

    公开(公告)号：US20050194647A1

    公开(公告)日：2005-09-08

    申请号：US10793972

    申请日：2004-03-05

    申请人： Hung-Chih Tsai ,  Chien-Chih Chou ,  Ying-Ting Chang ,  Che-Jung Chu ,  Kuo-Chio Liu

    发明人： Hung-Chih Tsai ,  Chien-Chih Chou ,  Ying-Ting Chang ,  Che-Jung Chu ,  Kuo-Chio Liu

    IPC分类号： H01L31/113

    CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/456

    摘要： A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.

    摘要翻译： 实现了具有改善的击穿电压的高电压PMOS器件。 不对称的高压集成电路结构包括衬底上的栅极电极和位于栅极电极的任一侧和邻近的衬底内的源极和漏极区域，其中源极区域被n阱包围。 对称的高压集成电路结构包括衬底上的栅极电极，位于栅极电极的任一侧和邻近衬底内的源极和漏极区域以及位于栅极电极下方的衬底中的n-阱。 两个结构中的n阱将击穿点从硅表面移动到源极或漏极区域的底部。

    High voltage device embedded non-volatile memory cell and fabrication method
    2.
    发明授权
    High voltage device embedded non-volatile memory cell and fabrication method 有权
    高压器件嵌入式非易失性存储单元及制造方法

    公开(公告)号：US07091535B2

    公开(公告)日：2006-08-15

    申请号：US10793972

    申请日：2004-03-05

    申请人： Hung-Chih Tsai ,  Chien-Chih Chou ,  Ying-Ting Chang ,  Che-Jung Chu ,  Kuo-Chio Liu

    发明人： Hung-Chih Tsai ,  Chien-Chih Chou ,  Ying-Ting Chang ,  Che-Jung Chu ,  Kuo-Chio Liu

    IPC分类号： H01L29/80

    CPC分类号： H01L29/7835 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/456

    摘要： A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.

    摘要翻译： 实现了具有改善的击穿电压的高电压PMOS器件。 不对称的高压集成电路结构包括衬底上的栅极电极和位于栅极电极的任一侧和邻近的衬底内的源极和漏极区域，其中源极区域被n阱包围。 对称的高压集成电路结构包括衬底上的栅极电极，位于栅极电极的任一侧和邻近衬底内的源极和漏极区域以及位于栅极电极下方的衬底中的n-阱。 两个结构中的n阱将击穿点从硅表面移动到源极或漏极区域的底部。

    Motion sensor device and methods for forming the same
    4.
    发明授权
    Motion sensor device and methods for forming the same 有权
    运动传感器装置及其形成方法

    公开(公告)号：US08960003B2

    公开(公告)日：2015-02-24

    申请号：US13353059

    申请日：2012-01-18

    申请人： Shyh-Wei Cheng ,  Yu-Ting Hsu ,  Hsi-Cheng Hsu ,  Chih-Yu Wang ,  Jui-Chun Weng ,  Che-Jung Chu

    发明人： Shyh-Wei Cheng ,  Yu-Ting Hsu ,  Hsi-Cheng Hsu ,  Chih-Yu Wang ,  Jui-Chun Weng ,  Che-Jung Chu

    IPC分类号： G01P15/125 ,  G01P15/08

    CPC分类号： G01P15/125 ,  G01P2015/0871 ,  H01G5/16 ,  Y10T29/43

    摘要： A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.

    摘要翻译： 微电子机械系统（MEMS）装置包括感测元件，以及在感测元件的至少一部分上方并且重叠的质量块。 检测质量被配置为可朝向感测元件移动。 在感测元件和检测质量块之间形成保护区域。 保护区域与感测元件的第一部分重叠，并且不与感测元件的第二部分重叠，其中第一和第二部分与证明块重叠。