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公开(公告)号：US20050180708A1
公开(公告)日：2005-08-18
申请号：US10515574
申请日：2002-06-27
CPC分类号： G02B6/02038 , B29D11/00721
摘要： The present invention relates to a method for preparing a GI (graded index) plastic optical fiber preform having a radial refractive index gradient, the refractive index increasing gradually from the outer periphery of the preform toward the center thereof, comprising inserting a 1st plastic tube (inside diameter: d1i, outside diameter: d10) (111) made of a first polymer (refractive index: n1) in a cylinder reactor (inside diameter: d0i, d10≦d0i) and inserting a 2nd plastic tube (inside diameter: d2i, outside diameter d20, d20≦d1i) (112) made of a second polymer (refractive index: n2, n2≧n1) in the 1st plastic tube, the reactor, the 1st and 2nd plastic tubes are positioned coaxially, injecting a precursor of a third polymer (refractive index: n′, n′≧n2) into the 2nd plastic tube, injecting a precursor of a fourth polymer (refractive index: n″, n1≦n″≦n2) into the space between the 1st and 2nd plastic tubes.
摘要翻译： 本发明涉及一种制备具有径向折射率梯度的GI（渐变折射率）塑料光纤预制件的方法，折射率从预成型坯的外周向其中心逐渐增加，包括插入第一塑料管（ 内径：由第一聚合物制成的外径：d <1 0 （111） （折射率：n <1）在气缸反应器中（内径：d 并且插入第二塑料管（内径：d 2），并且插入第二塑料管（内径：d 外部直径d 2 0 0 0 <= D < （112）由第二聚合物（折射率：n 2，n 2，N 2）= n 1 在第一塑料管中，反应器，第一和第二塑料管同轴地定位，注入第三聚合物的前体（折射率 ：n'，n'> = n <2>）插入第二塑料管中，注入第四聚合物的前体（折射率：n“，n <1 < N“<= N <2>）进入第一和第二塑料管之间的空间。
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公开(公告)号：US20080102846A1
公开(公告)日：2008-05-01
申请号：US11865639
申请日：2007-10-01
IPC分类号： H04Q7/20
CPC分类号： H04W72/0413 , H04L5/0055 , H04L5/0057 , H04W72/085
摘要： A method for adaptively allocating resources of an uplink control channel according to a system situation is disclosed. If a base station (BS) recognizes the system situation, establishes control information for resource allocation, and transmits the control information to a mobile station (MS), the mobile station (MS) allocates resources for transmitting uplink control information using a specific block or a specific resource distribution method according to the corresponding control information. The system situation may be changed according to the number of users contained in the BS's coverage or the usage of a multi-antenna. The variation of the system situation is actively reflected so that the uplink channel resources can be effectively used.
摘要翻译： 公开了一种根据系统情况自适应地分配上行链路控制信道的资源的方法。 如果基站（BS）识别系统情况，则建立资源分配控制信息，并将控制信息发送到移动台（MS），移动站（MS）使用特定块分配用于发送上行链路控制信息的资源， 根据相应控制信息的具体资源分配方法。 可以根据BS覆盖范围内的用户数量或多天线的使用情况来改变系统状况。 积极反映系统状况的变化，从而可以有效利用上行链路信道资源。
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公开(公告)号：US20070207430A1
公开(公告)日：2007-09-06
申请号：US11655166
申请日：2007-01-19
IPC分类号： F23D14/12
CPC分类号： F23D14/145 , F23D14/64 , F23D2900/00003 , F23D2900/00012 , F23D2900/11402 , F23D2900/14063 , F23D2900/14481 , F24C3/067
摘要： A gas radiation burner includes a gas supply unit for spraying a mixed gas of a gas and air; a burner body having a burner pot accommodating the mixed gas supplied by the gas supply unit and a burner housing provided on the burner pot to configure a combustion chamber; a burner mat provided over the burner pot to emit a radiant heat generated by combustion of the mixed gas supplied by the burner pot; and an air supply unit supplying air to the burner housing.
摘要翻译： 气体放射燃烧器包括用于喷射气体和空气的混合气体的气体供应单元; 燃烧器主体，具有容纳由气体供应单元供应的混合气体的燃烧器壶和设置在燃烧器锅上以构成燃烧室的燃烧器壳体; 燃烧器垫，设置在燃烧器锅上方，以发射由燃烧器锅供应的混合气体燃烧产生的辐射热; 以及将空气供给到燃烧器壳体的供气单元。
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公开(公告)号：US20070090498A1
公开(公告)日：2007-04-26
申请号：US11304047
申请日：2005-12-15
申请人： Dae Lee
发明人： Dae Lee
IPC分类号： H01L23/495
CPC分类号： H01L25/105 , H01L2224/48227 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/107 , H01L2924/15311
摘要： The stack type semiconductor package module includes a lower semiconductor package having a main substrate, a chip mounted on the main substrate and electrically connected to the main substrate through a wire. An epoxy molding compound (EMC) is provided on the main substrate to cover the chip and the wire. Contact holes are formed in the EMC. A sub-substrate having protrusions coated with solder is connected to the lower semiconductor package by inserting the solder coated protrusions into the contact holes. Heat is applied to the protrusions, and the molten solder solidifies inside the contact holes. An upper semiconductor package having substantially identical structure as the lower package is then stacked on the sub-substrate.
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公开(公告)号：US20060078836A1
公开(公告)日：2006-04-13
申请号：US11111825
申请日：2005-04-22
IPC分类号： F23N5/00
CPC分类号： F23N3/002 , F23N5/022 , F23N2025/06 , F23N2025/16 , F23N2033/08
摘要： Disclosed are a gas burner and a method for controlling the same in which stable use is possible and combustion efficiency is improved. The gas burner includes a burner body burned by a mixture gas of gas fuel and air, a gas supplying valve supplying the gas fuel to the burner body through a gas supplying tube connected with the burner body, an air supplying fan supplying the air to the burner body through an air supplying tube connected with the burner body, and a control part controlling air flow supplied to the burner body by controlling revolution per minute (RPM) of the air supplying fan. Since an optimal air-fuel ratio can be maintained by controlling the RPM of the air supplying fan, combustion efficiency can be increased. Since a temperature of a glass can be maintained properly, life span of the gas burner can be increased and its stable use is possible.
摘要翻译： 公开了一种气体燃烧器及其控制方法，其中可以稳定地使用并提高燃烧效率。 气体燃烧器包括由气体燃料和空气的混合气体燃烧的燃烧器体，通过与燃烧器本体连接的供气管向燃烧器本体供给气体燃料的气体供给阀， 燃烧器本体通过与燃烧器本体连接的空气供给管，以及控制部，其通过控制供气风扇的每分钟转数来控制供给燃烧器主体的气流。 由于通过控制空气供给风扇的RPM可以维持最佳的空燃比，所以能够提高燃烧效率。 由于可以适当地维持玻璃的温度，所以可以提高气体燃烧器的使用寿命并且可以稳定地使用。
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公开(公告)号：US20070023749A1
公开(公告)日：2007-02-01
申请号：US11474971
申请日：2006-06-27
IPC分类号： H01L29/08
CPC分类号： H01L51/004 , B82Y10/00 , B82Y30/00 , C08G61/04 , C08G61/124 , C08G61/126 , C09K11/06 , C09K2211/1011 , C09K2211/1044 , H01L51/0035 , H01L51/0036 , H01L51/0053 , H01L51/0071 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.
摘要翻译： 本发明涉及一种有机薄膜晶体管，其包括有机层，该有机层包含促进半导电层与电极之间的欧姆接触并用作半导体层的有机化合物。 根据本发明的有机薄膜晶体管在半导体层和源极/漏电极之间具有优异的电接触，因此可以广泛用作电气/电子设备的部件。 结果，作为有机薄膜晶体管中的源电极或漏电极的材料，虽然可以使用成本低廉且加工性优异的材料，尽管它们作为材料具有低功函数。
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公开(公告)号：US20060076005A1
公开(公告)日：2006-04-13
申请号：US11126290
申请日：2005-05-11
IPC分类号： F24C15/10
CPC分类号： F24C3/067
摘要： Gas range including a casing having an inlet for drawing external air, and an outlet for discharging exhaust gas, at least one burner each having a burner mat for being heated with flame formed at the time of combustion of fuel gas to generate radiant heat, a sheet of glass covered on each of the burners for transmission of the radiant heat, and a first fan provided at the outlet for discharging the exhaust gas to an outside of the gas range, and drawing the external air into the casing.
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公开(公告)号：US20060002554A1
公开(公告)日：2006-01-05
申请号：US11170070
申请日：2005-06-30
IPC分类号： H04L9/00
CPC分类号： G05B5/01
摘要： The present invention relates to an apparatus for controlling chaos using oscillation quenching, and more particularly, to an apparatus for controlling chaos using oscillation quenching, wherein a chaos system to be controlled can be easily stabilized by coupling the chaos system with another chaos system or a periodic system that can be easily implemented, using the concept of oscillation quenching. To this end, the present invention provides an apparatus for controlling chaos using oscillation quenching, comprising a chaos signal generating device 10 for generating a chaos signal; a first scaling means 40 for scaling an output signal from a controlled chaos device; a second scaling means 20 for scaling an output signal from the chaos signal generating device 10; a subtraction means 50 for performing a subtraction operation between the output signals of the first and second scaling means 40 and 20; an auxiliary scaling means 60 for scaling an output signal from the subtraction means 50 so that a coupling constant for the controlled chaos device 30 and the chaos signal generating device 10 is in a state where chaos is stabilized, and for feeding back the scaled signal to the controlled chaos device 30; and an inverting means 70 for inverting an output signal from the auxiliary scaling means 60 and feeding back the inverted signal to the chaos signal generating device 10.
摘要翻译： 本发明涉及一种使用振荡淬火来控制混沌的装置，更具体地说，涉及一种使用振荡淬火来控制混沌的装置，其中通过将混沌系统与另一混沌系统或 周期性系统可以轻松实现，采用振荡淬火的概念。 为此，本发明提供了一种使用振荡淬火来控制混沌的装置，包括用于产生混沌信号的混沌信号发生装置10; 用于缩放来自受控混沌装置的输出信号的第一缩放装置40; 用于缩放来自混沌信号发生装置10的输出信号的第二缩放装置20; 用于在第一和第二缩放装置40和20的输出信号之间执行减法运算的减法装置50; 用于缩小来自减法装置50的输出信号的辅助缩放装置60，使得受控混沌装置30和混沌信号发生装置10的耦合常数处于混沌稳定的状态，并将缩放的信号反馈到 受控混沌装置30; 以及用于反转来自辅助缩放装置60的输出信号并将反相信号反馈到混沌信号产生装置10的反相装置70。
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公开(公告)号：US20050279115A1
公开(公告)日：2005-12-22
申请号：US11053806
申请日：2005-02-09
CPC分类号： F24F5/0035 , F24F1/0007 , F28C1/14 , F28D5/02
摘要： A method and an apparatus of evaporative cooling for reducing the volume of an evaporative cooler by considerably lowering the temperature of a cooling fluid are disclosed. A first cooling fluid, which comprises most part of the cooling fluid evaporatively cooled by an outside air while passing through an evaporative cooling section after circulating in an apparatus to be cooled, re-circulates in the apparatus to be cooled. A second cooling fluid, which is separated from the cooling fluid after being cooled in the evaporative cooling section, passes through a sensible air-cooling section placed at an outside air inlet. Thereby, the inflow outside air is sensibly cooled. The second cooling fluid, which passes through the sensible cooling section, re-circulates in the evaporative cooling section. Also, the outside air that is sensibly cooled by the second cooling fluid evaporatively cools the cooling fluid, which passes through the evaporative cooling section, again. This process is repeated. Accordingly, the cooling efficiency in the apparatus to be cooled becomes maximized. The second cooling fluid indirectly contacts with the outside air, so the outside air is sensibly cooled without increasing its humidity. Thus, the wet-bulb temperature of the air inhaled into the evaporative cooling section is reduced and the cooling fluid can be cooled to even a lower temperature. Also, the above structure can provide a cooling fluid of even a lower temperature, so the volume of a cooling tower or outdoor unit, etc. can be reduced considerably.
摘要翻译： 公开了一种用于通过显着降低冷却流体的温度来减小蒸发冷却器的体积的蒸发冷却的方法和装置。 第一冷却流体，其包括大部分冷却流体，其在被冷却的装置中循环之后通过蒸发冷却段而被外部空气蒸发冷却，并在要冷却的装置中再循环。 在蒸发冷却部分中冷却之后与冷却流体分离的第二冷却流体通过位于外部空气入口处的明智空气冷却部分。 由此，明显地冷却流入外部的空气。 通过明智冷却部分的第二冷却流体在蒸发冷却段中再循环。 此外，被第二冷却流体明智地冷却的外部空气也蒸发地冷却通过蒸发冷却部的冷却流体。 重复此过程。 因此，待冷却装置中的冷却效率最大化。 第二冷却液与外部空气间接接触，因此外部空气明智地冷却而不增加其湿度。 因此，吸入蒸发冷却部分的空气的湿球温度降低，并且冷却流体可以被冷却到甚至更低的温度。 另外，上述结构也能够提供即使较低温度的冷却液，因此能够大幅度降低冷却塔或室外机等的体积。
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公开(公告)号：US20050263821A1
公开(公告)日：2005-12-01
申请号：US10989006
申请日：2004-11-16
IPC分类号： H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L29/785 , H01L29/66818
摘要： Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and a method for manufacturing the same, in which a channel is implemented in a streamline shape, an expansion region is implemented in a gradually increased form, and source and drain regions is implemented in an elevated structure by using a difference of a thermal oxidation rate depending on a crystal orientation of silicon and a geographical shape of the single-crystal silicon pattern. As the channel is formed in a streamline shape, it is possible to prevent the degradation of reliability due to concentration of an electric field and current driving capability by the gate voltage is improved because the upper portion and both sides of the channel are surrounded by the gate electrodes. In addition, a current crowding effect is prevented due to the expansion region increased in size and source and drain series resistance is reduced by elevated source and drain structures, thereby increasing the current driving capability.
摘要翻译： 提供一种多栅极金属氧化物半导体（MOS）晶体管及其制造方法，其中以流线形状实现沟道，扩展区域以逐渐增加的形式实现，并且实现源极和漏极区域 通过使用取决于硅的晶体取向的热氧化速率的差异和单晶硅图案的地理形状，在升高的结构中。 由于通道形成为流线形状，所以可以防止由于电场集中引起的可靠性的劣化，由于栅极电压的电流驱动能力得到改善，因为通道的上部和两侧被 栅电极。 此外，由于扩大区域的尺寸增加，阻止了电流拥挤效应，并且通过升高的源极和漏极结构降低了源极和漏极串联电阻，从而增加了电流驱动能力。
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