公开(公告)号：US08421105B2

公开(公告)日：2013-04-16

申请号：US12793770

申请日：2010-06-04

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US08120042B2

公开(公告)日：2012-02-21

申请号：US12506771

申请日：2009-07-21

申请人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

发明人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0091

摘要： A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和发光结构。 基板在其至少一个侧表面上包括多个不连续的熔接点。 发光结构在基板上包括多个化合物半导体层。

公开(公告)号：US08299474B2

公开(公告)日：2012-10-30

申请号：US13341680

申请日：2011-12-30

申请人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

发明人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

IPC分类号： H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Disclosed is an LED package. The LED package includes a package body, a semiconductor light emitting device on the package body and at least one of frames on the package body. At least one of the frames includes a bottom frame on the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.

摘要翻译： 公开了一种LED封装。 LED封装包括封装主体，封装主体上的半导体发光器件和封装主体上的至少一个框架。 至少一个框架包括在封装主体上的底部框架，以及至少两个从底部框架延伸并相对于底部框架倾斜的侧壁框架。

公开(公告)号：US07479661B2

公开(公告)日：2009-01-20

申请号：US11435751

申请日：2006-05-18

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32

摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0

摘要翻译： 本发明提供一种氮化物半导体器件及其制造方法。 在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。 此外，在本发明的氮化物半导体器件中，在第一和第二n型GaN层之间插入有0

公开(公告)号：US20120299038A1

公开(公告)日：2012-11-29

申请号：US13293858

申请日：2011-11-10

申请人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

发明人： Deok Ki Hwang ,  Young Ju Han ,  Hee Seok Choi ,  Ju Won Lee ,  Pil Geun Kang ,  Seok Beom Choi

IPC分类号： H01L33/36

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/641 ,  H01L2224/16

摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.

摘要翻译： 可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件 在第一半导体层和第一和第二电极周围的反射电极层之下。 可以在第一电极下方设置第一连接电极。 第一连接电极的至少一部分设置在支撑构件中。 第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

公开(公告)号：US20120098018A1

公开(公告)日：2012-04-26

申请号：US13341680

申请日：2011-12-30

申请人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

发明人： Sung Min Kong ,  Choong Youl Kim ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Disclosed is an LED package. The LED package includes a package body, a semiconductor light emitting device on the package body and at least one of frames on the package body. At least one of the frames includes a bottom frame on the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.

摘要翻译： 公开了一种LED封装。 LED封装包括封装主体，封装主体上的半导体发光器件和封装主体上的至少一个框架。 至少一个框架包括在封装主体上的底部框架，以及至少两个从底部框架延伸并相对于底部框架倾斜的侧壁框架。

公开(公告)号：US08013517B2

公开(公告)日：2011-09-06

申请号：US12299438

申请日：2007-12-27

申请人： Choong Youl Kim ,  Sung Min Kong ,  Hee Seok Choi ,  Seung Hyok Park ,  Ho Shin Yoon ,  Chang Hee Lee

发明人： Choong Youl Kim ,  Sung Min Kong ,  Hee Seok Choi ,  Seung Hyok Park ,  Ho Shin Yoon ,  Chang Hee Lee

IPC分类号： H01J1/62

CPC分类号： C09K11/7792 ,  H05B33/14

摘要： Disclosed are a phosphor, a coating phosphor composition, a method for preparing the phosphor, and a light emitting device. A silicate-based phosphor is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu, wherein M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, in which 0

摘要翻译： 公开了荧光体，涂料荧光体组合物，荧光体的制备方法以及发光装置。 硅酸盐系荧光体以（4-xyz）SrO·BaO·zCaO·aMgO·2（SiO 2）·bM 2 O 3：yEu的化学式表示，其中M为Y，Ce，La，Nd，Gd中的至少一种 ，Tb，Yb或Lu，其中0

公开(公告)号：US20070290225A1

公开(公告)日：2007-12-20

申请号：US11892445

申请日：2007-08-23

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

公开(公告)号：US07306964B2

公开(公告)日：2007-12-11

申请号：US11430990

申请日：2006-05-10

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

公开(公告)号：US08686450B2

公开(公告)日：2014-04-01

申请号：US11892445

申请日：2007-08-23

申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

摘要翻译： 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。