公开(公告)号：US08421105B2

公开(公告)日：2013-04-16

申请号：US12793770

申请日：2010-06-04

申请人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

发明人： Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Tchang Hun Oh ,  Hee Seok Choi ,  Kwang Ki Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US07002180B2

公开(公告)日：2006-02-21

申请号：US10187468

申请日：2002-06-28

申请人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

发明人： Steve Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan

IPC分类号： H01L27/15

CPC分类号： H01L33/40

摘要： A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

摘要翻译： 用于电极的焊盘与包括铝的p型氮化镓基半导体材料接触。 接合焊盘还可以包括一种或多种选自钯，铂，镍和金的金属。 接合焊盘可以用于在诸如发光二极管或激光二极管的半导体器件中的p电极上附接接合线，而不会导致电极的光透射和欧姆特性的劣化。 接合焊盘可以与与n型氮化镓基半导体材料（n电极）欧姆接触的与电极基本相同的材料形成。 这允许在制造基本上降低制造器件的成本的氮化镓基发光器件时同时形成焊盘和n电极。

公开(公告)号：US20130228814A1

公开(公告)日：2013-09-05

申请号：US13862784

申请日：2013-04-15

申请人： Hwan Hee JEONG ,  Sang Youl LEE ,  June O. SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

发明人： Hwan Hee JEONG ,  Sang Youl LEE ,  June O. SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC分类号： H01L33/38

CPC分类号： H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US20050179046A1

公开(公告)日：2005-08-18

申请号：US11057415

申请日：2005-02-14

申请人： Tchang-hun Oh ,  Brenda Dingle ,  Bo Yang ,  Ilya Libenzon ,  William Roberts ,  Hong Choi ,  John Fan

发明人： Tchang-hun Oh ,  Brenda Dingle ,  Bo Yang ,  Ilya Libenzon ,  William Roberts ,  Hong Choi ,  John Fan

IPC分类号： H01L29/22 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/32

摘要： An improved p-type electrode for a p-type gallium-nitride based semiconductor material is disclosed that includes at least one layer of indium-tin-oxide. The electrode can include the indium-tin-oxide layer(s) such that at least one of the indium-tin-oxide layers is in contact with the p-type semiconductor layer. Alternatively, the electrode can further include a first electrode layer in contact with the p-type semiconductor layer. In this example, the indium-tin-oxide layer(s) is over the first electrode layer. The first electrode layer includes at least one metal selected from the group consisting of nickel oxide, molybdenum oxide, ruthenium oxide and zinc oxide, and/or at least one non-oxidizing metal.

摘要翻译： 公开了一种用于p型氮化镓基半导体材料的改进的p型电极，其包括至少一层氧化铟锡。 电极可以包括铟锡氧化物层，使得至少一个氧化铟锡层与p型半导体层接触。 或者，电极还可以包括与p型半导体层接触的第一电极层。 在该示例中，铟锡氧化物层在第一电极层的上方。 第一电极层包括选自氧化镍，氧化钼，氧化钌和氧化锌中的至少一种金属和/或至少一种非氧化性金属。

公开(公告)号：US20050179042A1

公开(公告)日：2005-08-18

申请号：US11057695

申请日：2005-02-14

申请人： Bo Yang ,  Tchang-hun Oh ,  Brenda Dingle ,  William Roberts ,  Ilya Libenzon ,  Hong Choi ,  John Fan

发明人： Bo Yang ,  Tchang-hun Oh ,  Brenda Dingle ,  William Roberts ,  Ilya Libenzon ,  Hong Choi ,  John Fan

IPC分类号： H01L27/15 ,  H01L33/20

CPC分类号： H01L27/153 ,  H01L33/20

摘要： An integrated light-emitting device includes multiple p-n diodes integrated monolithically on an insulating substrate. The p-n diodes are of monolithic semiconductor materials over the single substrate. The p-n diodes can be all light-emitting diodes or a combination of light-emitting and ESD-protection diodes. The p-n diodes may have at least one beveled sidewall to enhance light extraction out of the light-emitting diodes. A method for producing such integrated light-emitting device and a method for producing such p-n diode that includes at least one beveled sidewall are also disclosed.

摘要翻译： 集成发光器件包括整体地集成在绝缘衬底上的多个p-n二极管。 p-n二极管是单个衬底上的单片半导体材料。 p-n二极管可以是所有的发光二极管，也可以是发光和ESD保护二极管的组合。 p-n二极管可以具有至少一个倾斜的侧壁，以增强从发光二极管中的光提取。 还公开了一种用于制造这种集成发光器件的方法以及包括至少一个倾斜侧壁的这种p-n二极管的制造方法。

公开(公告)号：US06658040B1

公开(公告)日：2003-12-02

申请号：US09627878

申请日：2000-07-28

申请人： Syn-Yem Hu ,  I-Hsing Tan ,  Tchang-Hun Oh

发明人： Syn-Yem Hu ,  I-Hsing Tan ,  Tchang-Hun Oh

IPC分类号： H01S5183

CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18308 ,  H01S5/1833 ,  H01S5/18333 ,  H01S2301/176

摘要： A vertical cavity surface emitting laser (VCSEL) has a top mirror structure with a surface, a light generation region, and a bottom mirror structure for reflecting light toward said top mirror structure. The VCSEL has a semiconductor portion with a surface that is disposed substantially planar with respect to the surface of the top mirror structure. At least one aperture-defining layer having an isolatable material is disposed in at least one of the bottom mirror structure and the top mirror structure. The aperture-defining layer has a conducting region, an insulating region having an aperture-defining surface for defining the conducting region, and a single trench adjacent to the insulating region for use in generating the insulating region. The trench having a continuous geometry for reducing the parasitic capacitance of the VCSEL.

摘要翻译： 垂直腔表面发射激光器（VCSEL）具有具有表面的上反射镜结构，光产生区域和用于将光朝向所述顶部反射镜结构反射的底部反射镜结构。 VCSEL具有半导体部分，其表面相对于顶部反射镜结构的表面基本上是平面的。 具有可隔离材料的至少一个孔径限定层设置在底部反射镜结构和顶部反射镜结构中的至少一个中。 孔限定层具有导电区域，具有用于限定导电区域的孔限定表面的绝缘区域和与绝缘区域相邻的单个沟槽，用于产生绝缘区域。 沟槽具有连续的几何形状，用于减小VCSEL的寄生电容。

公开(公告)号：US20110089450A1

公开(公告)日：2011-04-21

申请号：US12793770

申请日：2010-06-04

申请人： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

发明人： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括发光结构，电极，欧姆层，电极层，粘合层和沟道层。 发光结构可以包括化合物半导体层。 电极可以设置在发光结构上。 欧姆层可以设置在发光结构之下。 电极层可以包括在欧姆层之下的反射金属。 粘合层可以设置在电极层的下方。 沟道层可以沿着发光结构的底部边缘设置。

公开(公告)号：US07122841B2

公开(公告)日：2006-10-17

申请号：US10860798

申请日：2004-06-03

申请人： Tchang-Hun Oh ,  Hong K. Choi ,  John C. C. Fan ,  Jagdish Narayan

发明人： Tchang-Hun Oh ,  Hong K. Choi ,  John C. C. Fan ,  Jagdish Narayan

IPC分类号： H01L27/15

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/32 ,  H01L33/40

摘要： A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.

摘要翻译： 半导体器件包括具有第一主表面的衬底; 在所述衬底的第一表面上的半导体器件结构，所述器件结构包括n型半导体层和在所述n型半导体层上的p型半导体层; 具有第一表面和第二表面的p侧电极，其中所述第一表面与所述p型半导体层电接触; 以及p侧电极上的p侧接合焊盘。 优选地，半导体器件还包括在n型半导体层上的n侧焊盘。 p侧和n侧接合焊盘各自独立地包括作为其顶层的金层和在顶部金层下方的单层或多层扩散阻挡层。 任选地，在扩散阻挡层下方还包括一个或多个金属层。 通常，p侧焊盘形成在p侧电极上。 n型接合焊盘通常形成在n型半导体层上，与n型半导体层形成良好的欧姆接触。

公开(公告)号：US06847052B2

公开(公告)日：2005-01-25

申请号：US10463219

申请日：2003-06-17

申请人： John C. C. Fan ,  Hong K. Choi ,  Tchang-Hun Oh ,  Jyh Chia Chen ,  Jagdish Narayan

发明人： John C. C. Fan ,  Hong K. Choi ,  Tchang-Hun Oh ,  Jyh Chia Chen ,  Jagdish Narayan

IPC分类号： H01L21/285 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016 ,  Y10S257/918

摘要： A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

摘要翻译： 半导体器件包括：衬底; 在该衬底上的n型半导体层，该n型半导体层具有平坦的顶表面; p型半导体层，其延伸在n型半导体层的主要部分上，并且不延伸在邻近n型半导体的平面顶表面的至少一个边缘的n型半导体层的暴露区域上 层; 设置在所述n型半导体层的所述露出区域上的第一焊盘; 在p型半导体层上延伸的电极层; 以及在所述电极层上的第二焊盘，所述焊盘包括用于固定电互连的中心区域和从所述中心区域突出的至少一个指状区域，所述指状区域具有远离所述中心部分的长度 区域和宽度明显小于长度。 还描述了一种半导体器件的制造方法。

公开(公告)号：US06734091B2

公开(公告)日：2004-05-11

申请号：US10187465

申请日：2002-06-28

申请人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

发明人： Tchang-Hun Oh ,  Hong K. Choi ,  Bor-Yeu Tsaur ,  John C. C. Fan ,  Shirong Liao ,  Jagdish Narayan

IPC分类号： H01L2128

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

摘要： An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

摘要翻译： 公开了一种用于p型氮化镓基半导体材料的改进的电极，其包括氧化金属层和金属材料的第一和第二层。 电极通过在p型半导体层上沉积三个或更多个金属层而形成，使得至少一个金属层与p型半导体层接触。 然后至少两个金属层在氧的存在下进行退火处理以氧化至少一个金属层以形成金属氧化物。 电极为p型氮化镓基半导体材料提供良好的欧姆接触，从而降低氮化镓基半导体器件的工作电压。