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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08120042B2

    公开(公告)日：2012-02-21

    申请号：US12506771

    申请日：2009-07-21

    申请人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

    发明人： Sang Youl Lee ,  Sung Kyoon Kim ,  Hee Seok Choi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0091

    摘要： A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.

    摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和发光结构。 基板在其至少一个侧表面上包括多个不连续的熔接点。 发光结构在基板上包括多个化合物半导体层。

    Semiconductor light emitting device and method of fabricating the same
    3.
    发明授权
    Semiconductor light emitting device and method of fabricating the same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08994053B2

    公开(公告)日：2015-03-31

    申请号：US13171139

    申请日：2011-06-28

    申请人： Sang Youl Lee

    发明人： Sang Youl Lee

    IPC分类号： H01L33/00 ,  H01L29/26 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44

    CPC分类号： H01L33/32 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/44

    摘要： Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.

    摘要翻译： 提供一种半导体发光器件及其制造方法。 半导体发光器件包括：发光结构，包括第一导电类型半导体层，第一导电类型半导体层下的有源层和有源层下的第二导电类型半导体层; 在发光结构下方的反射电极层，以及在反射电极层的外周的外保护层。

    Light emitting device, light emitting device package, and lighting device with the same
    6.
    发明授权
    Light emitting device, light emitting device package, and lighting device with the same 有权
    发光装置，发光装置封装和照明装置

    公开(公告)号：US08766287B2

    公开(公告)日：2014-07-01

    申请号：US13242345

    申请日：2011-09-23

    申请人： Ji Hyung Moon ,  Sang Youl Lee ,  Chung Song Kim ,  Kwang Ki Choi ,  June O Song

    发明人： Ji Hyung Moon ,  Sang Youl Lee ,  Chung Song Kim ,  Kwang Ki Choi ,  June O Song

    IPC分类号： H01L29/18 ,  H01L33/38 ,  H01L25/075 ,  H01L33/62 ,  H01L27/15 ,  H01L33/20 ,  F21K99/00

    CPC分类号： H01L33/382 ,  F21K9/00 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same.The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.

    摘要翻译： 本发明涉及一种发光器件，发光器件封装以及具有该发光器件的照明器件。 发光器件包括：发光结构，包括第一导电类型半导体层，有源层和第二导电类型半导体层，形成在与第二导电类型半导体层连接的发光结构的下侧上的第二电极层 与通过第二导电类型半导体层和有源层的第一导电类型半导体层接触的第一电极层和形成在第二电极层和第一电极层之间的绝缘层，在第二导电类型半导体 层和第一电极层，以及有源层和第一电极层之间。

    Light emitting device, light emitting device package, and lighting system
    10.
    发明授权
    Light emitting device, light emitting device package, and lighting system 有权
    发光装置，发光装置封装和照明系统

    公开(公告)号：US08471241B2

    公开(公告)日：2013-06-25

    申请号：US13049126

    申请日：2011-03-16

    申请人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

    发明人： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

    IPC分类号： H01L33/06

    CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/385 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.

    摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构层，导电层，接合层，支撑构件，第一和第二焊盘以及第一和第二电极。 发光结构层包括第一导电类型半导体层，有源层和第二导电类型半导体层。 导电层设置在发光结构层的下方。 接合层设置在导电层下方。 支撑构件设置在接合层下方。 第一衬垫设置在支撑构件的下方。 第二垫片设置在支撑构件的下方距离第一垫片一定距离处。 第一电极连接在第一导电类型半导体层和第一焊盘之间。 第二电极连接在接合层和第二焊盘之间。