摘要:
Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
摘要:
Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
摘要:
Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound.
摘要:
A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
摘要:
A method of fabricating a liquid for an oxide thin film is provided, which includes mixing at least two kinds of dispersoids selected from the group consisting of a Zinc compound, an Indium compound, a Gallium compound, a Tin compound and a Thallium compound, with dispersion media corresponding to the selected dispersoids to form a dispersion system, and stirring and aging the dispersion system at a predetermined temperature for a predetermined time, wherein a molar ratio of the Zinc compound to each of the Indium compound, Gallium compound, Tin compound and Thallium compound is 1:0.1 to 1:2. According to the present invention, the liquid for the oxide thin film may be fabricated by a sol-gel method making it capable of being implemented in mass production in a simple and low-cost manner as opposed to the conventional vacuum deposition method.
摘要:
The embodiments of the present invention are directed to a method and apparatus that synchronize radio nodes using preambles in a radio communication system. An embodiment of the present invention relates to a method of transmitting preambles by a radio node. The method includes generating a first preamble indicating a system bandwidth and a carrier configuration, generating a second preamble indicating a segment identifier used for obtaining a node identifier, allocating the first preamble to a first preamble carrier set, allocating the second preamble to a second preamble carrier set corresponding to the segment identifier, and transmitting the first preamble to a receiving node through the first preamble carrier set and the second preamble to the receiving node through the second preamble carrier set.
摘要:
Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.
摘要:
Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
摘要:
The present invention relates to a space-division multiple power feeding and collecting apparatus, and more specifically to a space-division multiple power feeding and collecting apparatus which is composed of multiple power feeding type lines using phase division, time division or frequency division and the like along a traveling direction of a moving body and receives electric power therethrough so as to feed the electric power to and to collect electric power from various moving bodies of a vehicle, and underwater moving body or a robot and the like in a non-contact manner. The present invention can obtain a constant output voltage through the minimization of a regular variation of an output voltage in the traveling direction of the moving body by applying the space-division multiple feeding method along the travelling direction of the moving body on an I-shaped feeding line, and increases an air gap by improving the mean output power to be transmitted to a secondary side and reducing the leakage flux generated between adjacent magnetic poles.
摘要:
An apparatus for preventing withdrawing and insertion of a carriage of a circuit breaker is disclosed. When a circuit breaker main body is inserted, an interlocking unit operates by interworking with the carriage withdrawing and inserting preventing apparatus, and while the circuit breaker is being closed, a withdrawal and insertion handle prevents a lead screw from being rotated by the interlocking unit. Thus, when the circuit breaker performs a closing operation, unnecessary withdrawing and inserting operation of the carriage is basically prevented to thus prevent various safety accidents, a contact resistance, a temperature increase, and damage to a device resulting from a breakdown.