公开(公告)号：US07538480B2

公开(公告)日：2009-05-26

申请号：US11196241

申请日：2005-08-04

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

IPC分类号： H01J19/00 ,  H05B33/00

CPC分类号： H01L51/0516

摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

摘要翻译： 提供一种有机薄膜晶体管（TFT），其可以防止由机械应力引起的变形或分离，以及包括有机TFT的平板显示装置。 有机TFT包括栅电极; 源电极和与电极绝缘的漏电极; 与栅电极绝缘的有机半导体层，并与源电极和漏电极接触; 以及将栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘层。 栅极绝缘层可以被图案化为岛状，以允许基板的相邻部分自由地弯曲，从而减少有机TFT及其部件层的应力和变形。

公开(公告)号：US20060027806A1

公开(公告)日：2006-02-09

申请号：US11195859

申请日：2005-08-03

申请人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  G02F1/13624

摘要： In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode. The second thin film transistor includes: a second gate electrode formed on the substrate and electrically connected to one of the first electrode and the second electrode; a third electrode insulated from the second gate electrode; a fourth electrode insulated from the second gate electrode and surrounding the third electrode in the same plane; and a second semiconductor layer insulated from the second gate electrode and contacting the third electrode and the fourth electrode.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的平板显示装置中，串扰最小化。 平板显示装置包括基板，第一薄膜晶体管，第二薄膜晶体管和显示元件。 第一薄膜晶体管包括：形成在基板上的第一栅电极; 与所述第一栅电极绝缘的第一电极; 与第一栅电极绝缘并在同一平面内围绕第一电极的第二电极; 以及与第一栅电极绝缘并与第一电极和第二电极接触的第一半导体层。 第二薄膜晶体管包括：形成在基板上并电连接到第一电极和第二电极之一的第二栅电极; 与所述第二栅电极绝缘的第三电极; 与第二栅电极绝缘并在同一平面内围绕第三电极的第四电极; 以及与第二栅电极绝缘并与第三电极和第四电极接触的第二半导体层。

公开(公告)号：US07692245B2

公开(公告)日：2010-04-06

申请号：US11195859

申请日：2005-08-03

申请人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/01

CPC分类号： H01L27/12 ,  G02F1/13624

摘要： In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode. The second thin film transistor includes: a second gate electrode formed on the substrate and electrically connected to one of the first electrode and the second electrode; a third electrode insulated from the second gate electrode; a fourth electrode insulated from the second gate electrode and surrounding the third electrode in the same plane; and a second semiconductor layer insulated from the second gate electrode and contacting the third electrode and the fourth electrode.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的平板显示装置中，串扰最小化。 平板显示装置包括基板，第一薄膜晶体管，第二薄膜晶体管和显示元件。 第一薄膜晶体管包括：形成在基板上的第一栅电极; 与所述第一栅电极绝缘的第一电极; 与第一栅电极绝缘并在同一平面内围绕第一电极的第二电极; 以及与第一栅电极绝缘并与第一电极和第二电极接触的第一半导体层。 第二薄膜晶体管包括：形成在基板上并电连接到第一电极和第二电极之一的第二栅电极; 与所述第二栅电极绝缘的第三电极; 与第二栅电极绝缘并在同一平面内围绕第三电极的第四电极; 以及与第二栅电极绝缘并与第三电极和第四电极接触的第二半导体层。

公开(公告)号：US20060028130A1

公开(公告)日：2006-02-09

申请号：US11196241

申请日：2005-08-04

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/0516

摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

公开(公告)号：US07902602B2

公开(公告)日：2011-03-08

申请号：US11158049

申请日：2005-06-22

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/13

CPC分类号： H01L51/0529

摘要： The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

摘要翻译： 本发明提供一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管具有基板和位于基板上的栅电极。 栅极绝缘体具有堆叠结构，其包括位于栅电极上的无机栅极绝缘体和有机栅极绝缘体。 有机半导体层位于栅极绝缘体上以与栅电极重叠。 因此，形成了具有柔性，降低漏电流和低阈值的有机薄膜晶体管。

公开(公告)号：US07470931B2

公开(公告)日：2008-12-30

申请号：US11134294

申请日：2005-05-23

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L51/0545 ,  G02F1/136227 ,  G02F1/1368 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.

摘要翻译： 薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。 第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容， 第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。 第一电容大于第二电容，第三电容和第四电容中的一个。

公开(公告)号：US20050285102A1

公开(公告)日：2005-12-29

申请号：US11158049

申请日：2005-06-22

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L21/786 ,  H01L21/00 ,  H01L29/08 ,  H01L51/05

CPC分类号： H01L51/0529

摘要： The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

摘要翻译： 本发明提供一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管具有基板和位于基板上的栅电极。 栅极绝缘体具有堆叠结构，其包括位于栅电极上的无机栅极绝缘体和有机栅极绝缘体。 有机半导体层位于栅极绝缘体上以与栅电极重叠。 因此，形成了具有柔性，降低漏电流和低阈值的有机薄膜晶体管。

公开(公告)号：US07816666B2

公开(公告)日：2010-10-19

申请号：US11271867

申请日：2005-11-14

申请人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  H01L21/02425 ,  H01L21/02488 ,  H01L29/78603

摘要： A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

摘要翻译： 防止由于热应力或沉积应力而变形的基板包括布置在基板的一个表面上的变形防止层。 衬底可以包括布置在衬底的一个表面上的薄膜晶体管和设置在衬底的另一个表面上并且包括至少一个层的变形防止层。

公开(公告)号：US20060118789A1

公开(公告)日：2006-06-08

申请号：US11291928

申请日：2005-12-02

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

IPC分类号： H01L29/04

CPC分类号： H01L51/0541 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0516

摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.

摘要翻译： 薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。 薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和 漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米 颗粒和固化树脂。 薄膜晶体管的导电层可以具有精确的图案。 薄膜晶体管可以通过低成本，低温工艺制造。

公开(公告)号：US20050258422A1

公开(公告)日：2005-11-24

申请号：US11134294

申请日：2005-05-23

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/76 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L51/0545 ,  G02F1/136227 ,  G02F1/1368 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.

摘要翻译： 薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。 第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容， 第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。 第一电容大于第二电容，第三电容和第四电容中的一个。