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50 条记录 (耗时 0.022 秒)

    Photosensitive polymer and resist composition containing the same
    1.
    发明授权
    Photosensitive polymer and resist composition containing the same 失效
    含有它们的光敏聚合物和抗蚀剂组合物

    公开(公告)号：US06596459B1

    公开(公告)日：2003-07-22

    申请号：US09716269

    申请日：2000-11-21

    申请人： Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

    发明人： Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

    IPC分类号： G03F7004

    CPC分类号： G03F7/0395 ,  G03F7/0397

    摘要： There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.

    摘要翻译： 提供光敏聚合物和含有它的光致抗蚀剂复合物。 光敏聚合物由下式表示：其中R1是酸不稳定的叔烷基酯基，R2是氢原子，甲基，乙基，羧基，γ-丁内酯-2-基酯，γ-丁内酯-3-基酯 ，泛酸内酯-2-基酯，甲羟戊酸内酯，3-四氢呋喃基酯，2,3-亚丙基碳酸酯-1-基酯，3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃，a /（ a + b + c）为0.1〜0.7，b /（a + b + c）为0.1〜0.8，c /（a + b + c）为0.0〜0.8，n为0〜 2。

    Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same
    6.
    发明授权
    Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same 失效
    光敏酚醛衍生物和含有它们的化学放大光致抗蚀剂组合物

    公开(公告)号：US06497987B1

    公开(公告)日：2002-12-24

    申请号：US09662653

    申请日：2000-09-14

    申请人： Hyun-woo Kim ,  Sook Lee ,  Sang-gyun Woo

    发明人： Hyun-woo Kim ,  Sook Lee ,  Sang-gyun Woo

    IPC分类号： G03C173

    CPC分类号： G03F7/0045 ,  C07J1/00 ,  Y02P20/55 ,  Y10S430/115

    摘要： A photosensitive compound, and a chemically amplified photoresist composition containing the photosensitive compound, maintain transparency even when exposed to a short-wavelength light source of 193 nm or below, and exhibit improved adhesion to an underlying film or substrate, improved wettability to a developing solution and improved resistance to dry etching. The photosensitive compound includes a carboxylic acid protected with a protective group capable of being deprotected with an acid and has a hydroxy at position No. 3 substituted with a hydrophillic aliphatic compound or a hydrophillic alicyclic compound.

    摘要翻译： 含有该光敏化合物的光敏化合物和化学放大型光致抗蚀剂组合物即使在暴露于193nm以下的短波长光源时也保持透明性，并且显示出对下层膜或基材的改善的粘合性，改善了对显影液的润湿性 并提高了耐干腐蚀性。 感光性化合物包括被保护基保护的羧酸，该保护基能够用酸去保护，并且在3位的羟基被亲水性脂族化合物或亲水脂环化合物取代。

    Mask patterns for semiconductor device fabrication and related methods
    8.
    发明授权
    Mask patterns for semiconductor device fabrication and related methods 失效
    半导体器件制造的掩模图案及相关方法

    公开(公告)号：US07361609B2

    公开(公告)日：2008-04-22

    申请号：US11232703

    申请日：2005-09-22

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： H01L21/302

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

    Mask patterns for semiconductor device fabrication and related methods and structures
    9.
    发明申请
    Mask patterns for semiconductor device fabrication and related methods and structures 失效
    半导体器件制造的掩模图案及相关方法和结构

    公开(公告)号：US20060063384A1

    公开(公告)日：2006-03-23

    申请号：US11232703

    申请日：2005-09-22

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： G03F1/00 ,  H01L21/302

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

    Photosensitive polymers and resist compositions comprising the photosensitive polymers
    10.
    发明授权
    Photosensitive polymers and resist compositions comprising the photosensitive polymers 失效
    包含光敏聚合物的光敏聚合物和抗蚀剂组合物

    公开(公告)号：US06787287B2

    公开(公告)日：2004-09-07

    申请号：US10103756

    申请日：2002-03-25

    申请人： Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

    发明人： Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

    IPC分类号： G03F7075

    CPC分类号： G03F7/0758 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

    摘要： A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.

    摘要翻译： 抗蚀剂组合物的光敏聚合物包括由下式表示的含硅烷基乙烯基醚和马来酸酐的共聚物：其中R1是-H，-OSi（CH3）2C（CH3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; R 1，R 2，R 3和R 4中的至少一个为含Si基团。