公开(公告)号：US3473976A

公开(公告)日：1969-10-21

申请号：US3473976D

申请日：1966-03-31

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  PECORARO RAYMOND P

IPC: H01L21/00 ,  H01L21/316 ,  H01L21/761 ,  H01L21/82 ,  H01L27/07 ,  H01L7/36

CPC classification number: H01L27/0761 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/761 ,  H01L21/82 ,  H01L27/0755 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/05 ,  Y10S148/062 ,  Y10S148/115

公开(公告)号：US3585464A

公开(公告)日：1971-06-15

申请号：US3585464D

申请日：1967-10-19

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  HESS MARTIN S ,  MAHERAS GEORGE ,  NORTH WILLIAM D ,  GROCHOWSKI EDWARD G

IPC: H01L21/822 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/04 ,  H01L29/73 ,  H01L19/00

CPC classification number: H01L29/045 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/00 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S438/91 ,  Y10S438/973

Abstract: A semiconductor device and a method for fabricating the same which is composed of a monocrystalline semiconductor body having a surface crystallographic orientation substantially parallel to a plane and having a PN junction formed in the body. The body has an insulator coating, such as silicon dioxide, over the PN junction. The surface state density at the semiconductorinsulator interface is very low. This low density is believed to be a reason for the increased beta in the oriented material semiconductor device. Further, the device has a low defect density and few dopant precipitate sites even at high dopant levels. A monolithic integrated circuit structure composed of the monocrystalline semiconductor substrate having a surface crystallographic orientation substantially parallel to a plane with a plurality of semiconductor devices within the substrate is described. The devices are isolated from one another by PN junctions. The tolerance in a given isolated device, between the PN junction and the nearest region having a different conductivity is less than approximately 0.3 mils. This very close spacing allows substantially greater compactness of semiconductor devices within a monocrystalline semiconductor body than has ever been previously accomplished.

公开(公告)号：US3443176A

公开(公告)日：1969-05-06

申请号：US3443176D

申请日：1966-03-31

Applicant: IBM

Inventor： AGUSTA BENJAMIN ,  HESS MARTIN S

IPC: H01L21/316 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L23/535 ,  H01L27/07 ,  H01L11/10 ,  H01L15/00

CPC classification number: H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L23/535 ,  H01L27/0755 ,  H01L27/0761 ,  H01L2924/0002 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/151 ,  Y10S438/965 ,  H01L2924/00