公开(公告)号：US3072507A

公开(公告)日：1963-01-08

申请号：US82411559

申请日：1959-06-30

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  MARINACE JOHN C ,  SILVEY GENE A

IPC: C30B19/04 ,  C30B19/10 ,  C30B25/02 ,  C30B25/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/363 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B19/04 ,  C30B19/106 ,  C30B25/02 ,  C30B25/18 ,  C30B29/08 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/00 ,  Y10S148/022 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/17

Abstract: 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

公开(公告)号：US2997590A

公开(公告)日：1961-08-22

申请号：US82324759

申请日：1959-06-26

Applicant: IBM

Inventor： LYONS VINCENT J ,  SILVEY GENE A ,  TURNER WILLIAM J

IPC: G02B5/20

CPC classification number: G02B5/207

公开(公告)号：US2898248A

公开(公告)日：1959-08-04

申请号：US65939157

申请日：1957-05-15

Applicant: IBM

Inventor： SILVEY GENE A ,  LYONS VINCENT J

IPC: H01L21/205

CPC classification number: H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

公开(公告)号：US3162557A

公开(公告)日：1964-12-22

申请号：US15896261

申请日：1961-12-13

Applicant: IBM

Inventor： BROCK GEOFFREY E ,  SILVEY GENE A

IPC: C30B31/06 ,  H01L21/00

CPC classification number: C30B31/06 ,  H01L21/00

公开(公告)号：US2955269A

公开(公告)日：1960-10-04

申请号：US66081057

申请日：1957-05-22

Applicant: IBM

Inventor： SILVEY GENE A

IPC: H01B1/00 ,  H01L21/00 ,  H01L21/34 ,  H01L21/479 ,  H01L29/167 ,  H01L29/24 ,  H03H9/00

CPC classification number: H01L29/167 ,  H01B1/00 ,  H01L21/00 ,  H01L21/34 ,  H01L21/479 ,  H01L29/24

公开(公告)号：US3615955A

公开(公告)日：1971-10-26

申请号：US3615955D

申请日：1969-02-28

Applicant: IBM

Inventor： REGH JOSEPH ,  SILVEY GENE A

IPC: C09K3/14 ,  B24B37/10 ,  C23F3/00 ,  C23F3/06 ,  H01L21/304 ,  H01L21/306 ,  H01L7/50

CPC classification number: H01L21/02024 ,  B24B37/102 ,  C23F3/06

Abstract: A silicon surface is polished by a simultaneous application of mechanical and chemical polishing procedures. The silicon surface to be polished is maintained continuously wetted with an excess quantity of a displacement plating solution containing a mercury cation and a fluoride anion. Mercury is deposited on the surface by the displacement of silicon and a simultaneous and continuous wiping of the surface removes the mercury from the high areas on the silicon surface.

公开(公告)号：US3436259A

公开(公告)日：1969-04-01

申请号：US3436259D

申请日：1966-05-12

Applicant: IBM

Inventor： REGH JOSEPH ,  SILVEY GENE A ,  GARDINER JAMES R

IPC: B24B37/04 ,  H01L21/20 ,  H01L21/288 ,  H01L21/306 ,  C23C17/02 ,  B44D5/10 ,  B44D5/12

CPC classification number: B24B37/102 ,  B24B37/042 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/288 ,  H01L21/30625

公开(公告)号：US2850688A

公开(公告)日：1958-09-02

申请号：US56419856

申请日：1956-02-08

Applicant: IBM

Inventor： SILVEY GENE A

IPC: C01B33/02 ,  C01G9/00 ,  H01L21/00 ,  H01L21/208 ,  H01L21/34 ,  H01L21/479 ,  H01L29/00 ,  H01L29/24 ,  H01L31/18

CPC classification number: H01L29/24 ,  C01B33/02 ,  C01G9/00 ,  H01L21/00 ,  H01L21/02521 ,  H01L21/34 ,  H01L21/479 ,  H01L29/00 ,  H01L31/18