公开(公告)号：US09812375B2

公开(公告)日：2017-11-07

申请号：US15011805

申请日：2016-02-01

申请人： II-VI INCORPORATED

发明人： Wen-Qing Xu ,  Chao Liu ,  Giovanni Barbarossa ,  Elgin E. Eissler ,  Thomas E. Anderson ,  Charles J. Kraisinger ,  Norbert Lichtenstein

IPC分类号： H01L23/373 ,  H01L23/498 ,  H01L33/64 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/3732 ,  H01L23/3736 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/83 ,  H01L25/0655 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/40139 ,  H01L2224/40151 ,  H01L2224/73263 ,  H01L2224/83424 ,  H01L2224/83438 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83463 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/8347 ,  H01L2224/83471 ,  H01L2224/83479 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/83493 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0781 ,  H01L2924/01014 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2224/37099

摘要： A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P-N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

公开(公告)号：US10373725B2

公开(公告)日：2019-08-06

申请号：US14817704

申请日：2015-08-04

申请人： II-VI INCORPORATED

发明人： Wen-Qing Xu ,  Chao Liu ,  Charles J. Kraisinger ,  Charles D. Tanner ,  Ian Currier ,  David Sabens ,  Elgin E. Eissler ,  Thomas E. Anderson

IPC分类号： H01B1/04 ,  C01B32/25 ,  C23C16/27 ,  C23C16/52

摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.

公开(公告)号：US20190326030A1

公开(公告)日：2019-10-24

申请号：US16502590

申请日：2019-07-03

申请人： II-VI Incorporated

发明人： Wen-Qing Xu ,  Chao Liu ,  Charles J. Kraisinger ,  Charles D. Tanner ,  Ian Currier ,  David Sabens ,  Elgin E. Eissler ,  Thomas E. Anderson

IPC分类号： H01B1/04 ,  C23C16/52 ,  C01B32/25 ,  C23C16/27

摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.

公开(公告)号：US20160130725A1

公开(公告)日：2016-05-12

申请号：US14817704

申请日：2015-08-04

申请人： II-VI INCORPORATED

发明人： Wen-Qing Xu ,  Chao Liu ,  Charles J. Kraisinger ,  Charles D. Tanner ,  Ian Currier ,  David Sabens ,  Elgin E. Eissler ,  Thomas E. Anderson

IPC分类号： C30B28/14 ,  C30B29/60 ,  C30B29/04 ,  C01B31/06 ,  H01B1/04

CPC分类号： H01B1/04 ,  C01B32/25 ,  C23C16/274 ,  C23C16/52

摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction ≧70% of the total number of diamond crystallites forming the polycrystalline diamond film.

摘要翻译： 在CVD反应器中的多晶金刚石膜的化学气相沉积（CVD）生长方法中，将气态氢气和气态烃的气体混合物引入到CVD反应器中。 由气体混合物形成的等离子体保持在设置在CVD反应器中的导电基板的表面上方，并使多晶金刚石膜在导电基板的表面上生长。 多晶金刚石膜的中心处的温度T在多晶金刚石膜的生长期间被控制。 CVD生长的多晶金刚石膜包括金刚石微晶，其可以具有沿[110]金刚石晶格方向的取向百分比≥形成多晶金刚石膜的金刚石微晶总数的70％。

公开(公告)号：US09469918B2

公开(公告)日：2016-10-18

申请号：US14600592

申请日：2015-01-20

申请人： II-VI Incorporated

发明人： Wen-Qing Xu ,  Elgin E. Eissler ,  Chao Liu ,  Charles D. Tanner ,  Charles J. Kraisinger ,  Michael Aghajanian

IPC分类号： B32B3/02 ,  C30B25/02 ,  C04B35/52 ,  C04B41/85 ,  C04B41/00 ,  C04B41/50 ,  C23C16/27 ,  C23C16/46 ,  C23C16/56 ,  C23C28/04 ,  C01B31/06 ,  C04B35/565 ,  C04B35/573 ,  C04B35/634

CPC分类号： C30B25/02 ,  C01B32/25 ,  C04B35/52 ,  C04B35/565 ,  C04B35/573 ,  C04B35/634 ,  C04B41/009 ,  C04B41/5002 ,  C04B41/85 ,  C04B2235/3826 ,  C04B2235/427 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C23C16/274 ,  C23C16/279 ,  C23C16/463 ,  C23C16/56 ,  C23C28/04 ,  C23C28/046 ,  Y10T428/21 ,  Y10T428/24355 ,  Y10T428/24612 ,  Y10T428/24893 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531

摘要： A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≧5%; ≧20%; ≧40%; or ≧60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.

摘要翻译： 多层基板包括在复合层上生长的金刚石层CVD。 复合层包括金刚石和碳化硅颗粒，以及任选的硅。 复合层中金刚石的负载量（体积）可以≥5％; ≥20％; ≥40％; 或≥60％。 多层基板可以用作光学装置; 用于检测辐射粒子或电磁波的检测器; 用于切割，钻孔，加工，铣削，研磨，抛光，涂覆，粘合或钎焊的装置; 制动装置; 印章; 导热体 电磁波导体; 在高温或低温条件下用于腐蚀环境，强氧化环境或强还原环境的化学惰性装置; 或用于抛光或平面化其他器件，晶片或膜的器件。

公开(公告)号：US20160233142A1

公开(公告)日：2016-08-11

申请号：US15011805

申请日：2016-02-01

申请人： II-VI INCORPORATED

发明人： Wen-Qing Xu ,  Chao Liu ,  Giovanni Barbarossa ,  Elgin E. Eissler ,  Thomas E. Anderson ,  Charles J. Kraisinger ,  Norbert Lichtenstein

IPC分类号： H01L23/373 ,  H01L23/498

CPC分类号： H01L23/3732 ,  H01L23/3736 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/40 ,  H01L24/83 ,  H01L25/0655 ,  H01L33/641 ,  H01L33/642 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/40139 ,  H01L2224/40151 ,  H01L2224/73263 ,  H01L2224/83424 ,  H01L2224/83438 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83463 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/8347 ,  H01L2224/83471 ,  H01L2224/83479 ,  H01L2224/8348 ,  H01L2224/83484 ,  H01L2224/83493 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/01006 ,  H01L2924/0781 ,  H01L2924/01014 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2224/37099

摘要： A composite substrate includes a submount substrate of an alternating pattern of electrically insulative portions, pieces, layers or segments and electrically conductive portions, pieces, layers or segments, and a shaft, back or plate for supporting the alternating pattern of electrically insulative portions and electrically conductive portions. An active device having a P—N junction can be mounted on the submount substrate. The electrically insulative portions, pieces, layers or segments can be formed from diamond while the electrically conductive portions, pieces, layers or segments can be formed from a metal or metal alloy.

摘要翻译： 复合基板包括电绝缘部分，片，层或片段和导电部分，片，层或片段的交替图案的副安装座基板，以及用于支撑电绝缘部分的交替图案和电绝缘部分的电极 导电部分。 具有P-N结的有源器件可以安装在副安装座基板上。 电绝缘部分，片，层或片段可以由金刚石形成，而导电部分，片，层或片段可以由金属或金属合金形成。

公开(公告)号：US20150218694A1

公开(公告)日：2015-08-06

申请号：US14600592

申请日：2015-01-20

申请人： II-VI Incorporated

发明人： Wen-Qing Xu ,  Elgin E. Eissler ,  Chao Liu ,  Charles D. Tanner ,  Charles J. Kraisinger ,  Michael Aghajanian

IPC分类号： C23C16/27 ,  C30B25/02 ,  C23C16/44

CPC分类号： C30B25/02 ,  C01B32/25 ,  C04B35/52 ,  C04B35/565 ,  C04B35/573 ,  C04B35/634 ,  C04B41/009 ,  C04B41/5002 ,  C04B41/85 ,  C04B2235/3826 ,  C04B2235/427 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C23C16/274 ,  C23C16/279 ,  C23C16/463 ,  C23C16/56 ,  C23C28/04 ,  C23C28/046 ,  Y10T428/21 ,  Y10T428/24355 ,  Y10T428/24612 ,  Y10T428/24893 ,  Y10T428/26 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531

摘要： A multilayer substrate includes a diamond layer CVD grown on a composite layer. The composite layer includes particles of diamond and silicon carbide and, optionally, silicon. A loading level (by volume) of diamond in the composite layer can be ≧5%; ≧20%; ≧40%; or ≧60%. The multilayer substrate can be used as an optical device; a detector for detecting radiation particles or electromagnetic waves; a device for cutting, drilling, machining, milling, lapping, polishing, coating, bonding, or brazing; a braking device; a seal; a heat conductor; an electromagnetic wave conductor; a chemically inert device for use in a corrosive environment, a strong oxidizing environment, or a strong reducing environment, at an elevated temperature, or under a cryogenic condition; or a device for polishing or planarization of other devices, wafers or films.

摘要翻译： 多层基板包括在复合层上生长的金刚石层CVD。 复合层包括金刚石和碳化硅颗粒，以及任选的硅。 复合层中金刚石的负载量（体积）可以≥5％; ≥20％; ≥40％; 或≥60％。 多层基板可以用作光学装置; 用于检测辐射粒子或电磁波的检测器; 用于切割，钻孔，加工，铣削，研磨，抛光，涂覆，粘合或钎焊的装置; 制动装置; 印章; 导热体 电磁波导体; 在高温或低温条件下用于腐蚀环境，强氧化环境或强还原环境的化学惰性装置; 或用于抛光或平面化其他器件，晶片或膜的器件。