FLOW CELLS
    1.
    发明公开
    FLOW CELLS 审中-公开

    公开(公告)号:US20230295455A1

    公开(公告)日:2023-09-21

    申请号:US18013188

    申请日:2021-10-19

    Applicant: ILLUMINA, INC.

    CPC classification number: C09D133/24

    Abstract: A flow cell includes a substrate and a copolymer coating. The copolymer coating includes copolymer chains, each having recurring units of formula (I): and formula (II):. In formula (I), R1 is —H, a halogen, an alkyl, an alkoxy, an alkenyl, an alkynyl, a cycloalkyl, an aryl, a heteroaryl, a heterocycle, or optionally substituted variants thereof; R2 is an azido; each (CH2)p can be optionally substituted; and p is an integer from 1 to 50. In formula (II), each of R3, R3′, R4, R4′ is —H, R5, —OR5, —C(O)OR5, —C(O)R5, —OC(O)R5, —C(O)NR6R7, or —NR6R7; R5 is —H, —OH, an alkyl, a cycloalkyl, a hydroxyalkyl, an aryl, a heteroaryl, a heterocycle, or optionally substituted variants thereof; and each of R6 and R7 is —H or an alkyl. Some copolymer chains include at least one alkoxyamine end group.

    ARRAYS INCLUDING A RESIN FILM AND A PATTERNED POLYMER LAYER

    公开(公告)号:US20180179575A1

    公开(公告)日:2018-06-28

    申请号:US15848640

    申请日:2017-12-20

    Abstract: An example of an array includes a support, a cross-linked epoxy polyhedral oligomeric silsesquioxane (POSS) resin film on a surface of the support, and a patterned hydrophobic polymer layer on the cross-linked epoxy POSS resin film. The patterned hydrophobic polymer layer defines exposed discrete areas of the cross-linked epoxy POSS resin film, and a polymer coating is attached to the exposed discrete areas. Another example of an array includes a support, a modified epoxy POSS resin film on a surface of the support, and a patterned hydrophobic polymer layer on the modified epoxy POSS resin film. The modified epoxy POSS resin film includes a polymer growth initiation site, and the patterned hydrophobic polymer layer defines exposed discrete areas of the modified epoxy POSS resin film. A polymer brush is attached to the polymer growth initiation site in the exposed discrete areas.

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