公开(公告)号：US20220115759A1

公开(公告)日：2022-04-14

申请号：US17450592

申请日：2021-10-12

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Antoine Pacco ,  Massimo Mongillo ,  Anton Potocnik ,  Danny Wan ,  Jeroen Verjauw

IPC: H01P7/00 ,  H01P11/00

Abstract: A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.

公开(公告)号：US11587708B2

公开(公告)日：2023-02-21

申请号：US17038470

申请日：2020-09-30

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Van Dai Nguyen ,  Sebastien Couet ,  Olivier Bultynck ,  Danny Wan ,  Eline Raymenants

IPC: G11C11/16 ,  H01F10/32 ,  G01R33/09 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

公开(公告)号：US20210104344A1

公开(公告)日：2021-04-08

申请号：US17038470

申请日：2020-09-30

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Van Dai Nguyen ,  Sebastien Couet ,  Olivier Bultynck ,  Danny Wan ,  Eline Raymenants

IPC: H01F10/32 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G01R33/09

Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

公开(公告)号：US12087994B2

公开(公告)日：2024-09-10

申请号：US17450592

申请日：2021-10-12

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Antoine Pacco ,  Massimo Mongillo ,  Anton Potocnik ,  Danny Wan ,  Jeroen Verjauw

IPC: H01P7/00 ,  H01P11/00

CPC classification number: H01P7/00 ,  H01P11/008

Abstract: A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.

公开(公告)号：US20240297136A1

公开(公告)日：2024-09-05

申请号：US18591705

申请日：2024-02-29

Applicant: IMEC VZW

Inventor： Jaber Derakhshandeh ,  Vadiraj Manjunath Ananthapadmanabha Rao ,  Danny Wan ,  Eric Beyne ,  Kristiaan De Greve ,  Anton Potocnik

IPC: H01L23/00 ,  H10N60/01 ,  H10N60/81

CPC classification number: H01L24/11 ,  H01L24/05 ,  H01L24/13 ,  H10N60/0912 ,  H10N60/815 ,  H01L2224/0401 ,  H01L2224/11009 ,  H01L2224/11462 ,  H01L2224/13109

Abstract: Superconducting solder bumps are produced on a qubit substrate by electrodeposition. The substrate comprises qubit areas, and superconducting contact pads connected to the qubit areas. First a protection layer is formed on the substrate, and patterned so as to cover at least the qubit areas. Then one or more thin layers are deposited conformally on the patterned protection layer, the thin layers comprising at least a non-superconducting layer suitable for acting as a seed layer for the electrodeposition of the solder bumps. The seed layer is removed locally in areas which lie within the surface area of respective contact pads. This is done by producing and patterning a mask layer, so that openings are formed therein, and by removing the seed layer from the bottom of the openings. The solder bumps are formed by electrodeposition of the solder material on the bottom of the openings. After the formation of the solder bumps, the seed layer and the protection layer are removed.