公开(公告)号：US20150235917A1

公开(公告)日：2015-08-20

申请号：US14699704

申请日：2015-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/02

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。

公开(公告)号：US20140335700A1

公开(公告)日：2014-11-13

申请号：US13892003

申请日：2013-05-10

Applicant: Infineon Technologies AG

Inventor： Guenter Denifl ,  Markus Kahn ,  Helmut Schoenherr ,  Daniel Maurer ,  Thomas Grille ,  Joachim Hirschler ,  Ursula Hedenig ,  Roland Moennich ,  Matthias Kuenle

IPC: H01L21/02 ,  C23C16/26

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362

Abstract: Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.

Abstract translation: 通过选择相应的处理参数，可以通过等离子体增强化学气相沉积来沉积具有降低的氢含量的碳层。 这样的碳层可以经受高温处理而不会显着过度收缩。

公开(公告)号：US20140117511A1

公开(公告)日：2014-05-01

申请号：US13664311

申请日：2012-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Fister Schlemitz Silvana ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/31 ,  H01L29/00

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。

公开(公告)号：US09728480B2

公开(公告)日：2017-08-08

申请号：US14699704

申请日：2015-04-29

Applicant: Infineon Technologies AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/3105 ,  H01L23/31 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

公开(公告)号：US09478409B2

公开(公告)日：2016-10-25

申请号：US14594193

申请日：2015-01-12

Applicant: Infineon Technologies AG

Inventor： Juergen Steinbrenner ,  Markus Kahn ,  Helmut Schoenherr

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/302 ,  C23C16/02 ,  C23C16/40

CPC classification number: H01L21/02126 ,  C23C16/0209 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/302 ,  H01L21/31 ,  H01L21/67034

Abstract: In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one oxide layer as an uppermost layer; depositing a dielectric layer over the uppermost layer of the dried workpiece; wherein the workpiece is continuously subject to a pressure which is lower than atmospheric pressure during the drying process and during the depositing process.

Abstract translation: 在各种实施例中，提供了一种用于涂覆工件的方法。 所述方法可以包括干燥工件，所述工件被涂覆有至少一个作为最上层的氧化物层; 在干燥工件的最上层上沉积介电层; 其中工件在干燥过程期间和沉积过程中连续经受低于大气压的压力。

公开(公告)号：US20150340224A1

公开(公告)日：2015-11-26

申请号：US14594193

申请日：2015-01-12

Applicant: Infineon Technologies AG

Inventor： Juergen Steinbrenner ,  Markus Kahn ,  Helmut Schoenherr

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/0209 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/302 ,  H01L21/31 ,  H01L21/67034

Abstract: In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one oxide layer as an uppermost layer; depositing a dielectric layer over the uppermost layer of the dried workpiece; wherein the workpiece is continuously subject to a pressure which is lower than atmospheric pressure during the drying process and during the depositing process.

Abstract translation: 在各种实施例中，提供了一种用于涂覆工件的方法。 所述方法可以包括干燥工件，所述工件被涂覆有至少一个作为最上层的氧化物层; 在干燥工件的最上层上沉积介电层; 其中工件在干燥过程期间和沉积过程中连续经受低于大气压的压力。