公开(公告)号：US20160111255A1

公开(公告)日：2016-04-21

申请号：US14977625

申请日：2015-12-21

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Gudrun Stranzl ,  Markus Zundel ,  Hubert Maier

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  B28D5/00 ,  H01J2237/334 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

公开(公告)号：US20150115448A1

公开(公告)日：2015-04-30

申请号：US14066777

申请日：2013-10-30

Applicant: Infineon Technologies AG

Inventor： Hubert Maier

IPC: H01L21/82 ,  H01L21/768 ,  H01L21/306 ,  H01L23/31

CPC classification number: H01L21/82 ,  H01L21/306 ,  H01L21/561 ,  H01L21/7685 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material.

Abstract translation: 提供了一种用于处理包括多个芯片的晶片的方法。 该方法可以包括：在晶片之间的多个芯片之间形成沟槽; 至少在所述沟槽的侧壁上形成扩散阻挡层; 在所述多个芯片和所述沟槽中形成封装材料; 并且从与封装材料相对的一侧将多个芯片单数化。

公开(公告)号：US20140117511A1

公开(公告)日：2014-05-01

申请号：US13664311

申请日：2012-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Fister Schlemitz Silvana ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/31 ,  H01L29/00

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。

公开(公告)号：US09728480B2

公开(公告)日：2017-08-08

申请号：US14699704

申请日：2015-04-29

Applicant: Infineon Technologies AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/3105 ,  H01L23/31 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

公开(公告)号：US20150064879A1

公开(公告)日：2015-03-05

申请号：US14013822

申请日：2013-08-29

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Gudrun Stranzl ,  Markus Zundel ,  Hubert Maier

IPC: H01L21/78 ,  B28D5/00 ,  H01J37/32

CPC classification number: H01J37/32009 ,  B28D5/00 ,  H01J2237/334 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

Abstract translation: 提供了关于将基板分离成多个部件的各种方法和装置。 例如，首先进行部分分离，然后将部分分离的基板完全分离成多个部分。

公开(公告)号：US09490103B2

公开(公告)日：2016-11-08

申请号：US14977625

申请日：2015-12-21

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Gudrun Stranzl ,  Markus Zundel ,  Hubert Maier

IPC: H01L21/683 ,  H01L21/78 ,  H01J37/32 ,  B28D5/00

CPC classification number: H01J37/32009 ,  B28D5/00 ,  H01J2237/334 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

公开(公告)号：US09490173B2

公开(公告)日：2016-11-08

申请号：US14066777

申请日：2013-10-30

Applicant: Infineon Technologies AG

Inventor： Hubert Maier

IPC: H01L21/00 ,  H01L21/82 ,  H01L21/306 ,  H01L21/768 ,  H01L23/31 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L21/82 ,  H01L21/306 ,  H01L21/561 ,  H01L21/7685 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/3185 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material.

Abstract translation: 提供了一种用于处理包括多个芯片的晶片的方法。 该方法可以包括：在晶片之间的多个芯片之间形成沟槽; 至少在所述沟槽的侧壁上形成扩散阻挡层; 在所述多个芯片和所述沟槽中形成封装材料; 并且从与封装材料相对的一侧将多个芯片单数化。

公开(公告)号：US09219011B2

公开(公告)日：2015-12-22

申请号：US14013822

申请日：2013-08-29

Applicant: Infineon Technologies AG

Inventor： Manfred Engelhardt ,  Gudrun Stranzl ,  Markus Zundel ,  Hubert Maier

IPC: H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/78 ,  B28D5/00

CPC classification number: H01J37/32009 ,  B28D5/00 ,  H01J2237/334 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: Various methods and apparatuses are provided relating to separation of a substrate into a plurality of parts. For example, first a partial separation is performed and then the partially separated substrate is completely separated into a plurality of parts.

Abstract translation: 提供了关于将基板分离成多个部件的各种方法和装置。 例如，首先进行部分分离，然后将部分分离的基板完全分离成多个部分。

公开(公告)号：US20150235917A1

公开(公告)日：2015-08-20

申请号：US14699704

申请日：2015-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/02

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。