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    Method for Processing a Layer Structure and Microelectromechanical Component
    1.
    发明申请
    Method for Processing a Layer Structure and Microelectromechanical Component 审中-公开

    公开(公告)号：US20200277183A1

    公开(公告)日：2020-09-03

    申请号：US16878161

    申请日：2020-05-19

    Applicant: Infineon Technologies AG

    Inventor： Andre Brockmeier ,  Wolfgang Friza ,  Daniel Maurer

    IPC: B81B7/00 ,  B81C1/00

    Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

    Method for processing a layer structure and microelectromechanical component
    2.
    发明授权
    Method for processing a layer structure and microelectromechanical component 有权

    公开(公告)号：US11180362B2

    公开(公告)日：2021-11-23

    申请号：US16878161

    申请日：2020-05-19

    Applicant: Infineon Technologies AG

    Inventor： Andre Brockmeier ,  Wolfgang Friza ,  Daniel Maurer

    IPC: B81C1/00 ,  B81B7/00

    Abstract: In accordance with various embodiments, a method for processing a layer structure is provided, where the layer structure includes a first layer, a sacrificial layer arranged above the first layer, and a second layer arranged above the sacrificial layer, where the second layer includes at least one opening, and the at least one opening extends from a first side of the second layer as far as the sacrificial layer. The method includes forming a liner layer covering at least one inner wall of the at least one opening; forming a cover layer above the liner layer, where the cover layer extends at least in sections into the at least one opening; and wet-chemically etching the cover layer, the liner layer and the sacrificial layer using an etching solution, where the etching solution has a greater etching rate for the liner layer than for the cover layer.

    Micro mechanical structure and method for fabricating the same
    10.
    发明授权
    Micro mechanical structure and method for fabricating the same 有权
    微机械结构及其制造方法

    公开(公告)号：US09212045B1

    公开(公告)日：2015-12-15

    申请号：US14448783

    申请日：2014-07-31

    Applicant: Infineon Technologies AG

    Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl

    IPC: H01L29/66 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00658 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R19/005 ,  H04R31/00 ,  H04R2307/023

    Abstract: A micro mechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure further includes a conductive base layer having a conductive base layer material. The conductive base layer material includes sectionally in a stiffening section a carbon material such that a carbon concentration of the carbon material in the conductive base layer material is at least 1014 per cubic cm and at least higher by a factor of 103 than in the conductive base layer material adjacent to the stiffening section.

    Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构包括响应于作用在功能区上的力而相对于衬底可偏转的功能区域。 功能结构还包括具有导电性基底层材料的导电性基底层。 导电基层材料在硬化部分中包括碳材料，使得导电基材层材料中的碳材料的碳浓度至少为1014每立方厘米，并且至少高于导电基体中的103倍 邻近加强部分的层材料。

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