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    Power monitor for silicon-photonics-based laser
    1.
    发明授权
    Power monitor for silicon-photonics-based laser 有权

    公开(公告)号：US11804692B2

    公开(公告)日：2023-10-31

    申请号：US17191410

    申请日：2021-03-03

    Applicant: INPHI CORPORATION

    Inventor： Xiaoguang He ,  Radhakrishnan L. Nagarajan

    IPC: H01S5/026 ,  H01S5/02 ,  H01S5/343

    CPC classification number: H01S5/0264 ,  H01S5/021 ,  H01S5/3434

    Abstract: A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet with low reflectivity and a backend facet with anti-reflective characteristics. The laser device further includes a wavelength tuner formed with waveguides in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.

    Light source for integrated silicon photonics
    2.
    发明授权
    Light source for integrated silicon photonics 有权

    公开(公告)号：US10951003B1

    公开(公告)日：2021-03-16

    申请号：US16800974

    申请日：2020-02-25

    Applicant: Inphi Corporation

    Inventor： Xiaoguang He ,  Radhakrishnan L. Nagarajan

    IPC: H04B10/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/02 ,  H01S5/323 ,  H04B10/27 ,  H04B10/07 ,  G01R31/26 ,  G02B6/12 ,  H01S5/12

    Abstract: A light source based on integrated silicon photonics includes a die of a silicon substrate having at least one chip site configured with a surface region, a trench region, and a first stopper region located separately between the surface region and the trench region. The trench region is configured to be a depth lower than the surface region. The light source includes a laser diode chip having a p-side facing the chip site and a n-side being distal to the chip site. The p-side includes a gain region bonded to the trench region, an electrode region bonded to the surface region, and an isolation region engaged with the stopper region to isolate the gain region from the electrode region. The light source also includes a conductor layer in the die configured to connect the gain region to an anode electrode and separately connect the electrode region to a cathode electrode.

    LASER CHIP FOR FLIP-CHIP BONDING ON SILICON PHOTONICS CHIPS
    3.
    发明申请
    LASER CHIP FOR FLIP-CHIP BONDING ON SILICON PHOTONICS CHIPS 有权

    公开(公告)号：US20220123518A1

    公开(公告)日：2022-04-21

    申请号：US17076162

    申请日：2020-10-21

    Applicant: INPHI CORPORATION

    Inventor： Xiaoguang He ,  Radhakrishnan L. Nagarajan

    IPC: H01S5/0238 ,  H01S5/02 ,  H01S5/028 ,  H01S5/0234 ,  H01S5/227 ,  H01S5/22 ,  H01S5/0237

    Abstract: A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

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