公开(公告)号：US20170330972A1

公开(公告)日：2017-11-16

申请号：US15527288

申请日：2014-12-19

Applicant: INTEL CORPORATION

Inventor： GRANT KLOSTER ,  SCOTT CLENDENNING ,  Rami HOURANI ,  SZUYA S. LIAO ,  PATRICIO E. ROMERO ,  FLORIAN GSTREIN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L21/28 ,  H01L29/06 ,  H01L21/3105 ,  H01L21/311 ,  H01L29/786 ,  H01L23/498

CPC classification number: H01L29/7851 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/32 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/42368 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/786

Abstract: Methods of selectively depositing high-K gate dielectric on a semiconductor structure are disclosed. The method includes providing a semiconductor structure disposed above a semiconductor substrate. The semiconductor structure is disposed beside an isolation sidewall. A sacrificial blocking layer is then selectively deposited on the isolation sidewall and not on the semiconductor structure. Thereafter, a high-K gate dielectric is deposited on the semiconductor structure, but not on the sacrificial blocking layer. Properties of the sacrificial blocking layer prevent deposition of oxide material on its surface. A thermal treatment is then performed to remove the sacrificial blocking layer, thereby forming a high-K gate dielectric only on the semiconductor structure.

公开(公告)号：US20190202842A1

公开(公告)日：2019-07-04

申请号：US16328536

申请日：2016-10-01

Applicant: Intel Corporation

Inventor： PATRICIO E. ROMERO

IPC: C07F5/00 ,  H01L21/02 ,  H01L29/51 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

CPC classification number: C07F5/003 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45553 ,  H01L21/02205 ,  H01L21/0228 ,  H01L29/517

Abstract: Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.