公开(公告)号：US20150318378A1

公开(公告)日：2015-11-05

申请号：US14269599

申请日：2014-05-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Theodore J. LETAVIC ,  Max G. LEVY ,  Santosh SHARMA ,  Yun SHI

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L29/0692 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7835

Abstract: Low leakage, high frequency devices and methods of manufacture are disclosed. The method of forming a device includes implanting a lateral diffusion drain implant in a substrate by a blanket implantation process. The method further includes forming a self-aligned tapered gate structure on the lateral diffusion drain implant. The method further includes forming a halo implant in the lateral diffusion drain implant, adjacent to the self-aligned tapered gate structure and at least partially under a source region of the self-aligned tapered gate structure.

Abstract translation: 公开了低泄漏，高频器件和制造方法。 形成器件的方法包括通过覆盖注入工艺将侧向扩散漏极注入植入衬底中。 该方法还包括在横向扩散漏极植入物上形成自对准锥形栅极结构。 该方法还包括在横向扩散漏极注入中形成与自对准的锥形栅极结构相邻并且至少部分地在自对准锥形栅极结构的源极区域下方的卤素注入。

公开(公告)号：US20150014769A1

公开(公告)日：2015-01-15

申请号：US13939231

申请日：2013-07-11

Applicant: International Business Machines Corporation

Inventor： John J. ELLIS-MONAGHAN ,  Theodore J. LETAVIC ,  Santosh SHARMA ,  Yun SHI ,  Michael J. ZIERAK

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66681 ,  H01L29/1045 ,  H01L29/1058 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/4983 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66893 ,  H01L29/66901 ,  H01L29/735 ,  H01L29/7816 ,  H01L29/7817 ,  H01L29/7818 ,  H01L29/7835

Abstract: A high-voltage LDMOS device with voltage linearizing field plates and methods of manufacture are disclosed. The method includes forming a continuous gate structure over a deep well region and a body of a substrate. The method further includes forming oppositely doped, alternating segments in the continuous gate structure. The method further includes forming a contact in electrical connection with a tip of the continuous gate structure and a drain region formed in the substrate. The method further includes forming metal regions in direct electrical contact with segments of at least one species of the oppositely doped, alternating segments.

Abstract translation: 公开了具有电压线性化场板的高压LDMOS器件和制造方法。 该方法包括在深阱区域和衬底的主体上形成连续的栅极结构。 该方法还包括在连续栅极结构中形成相对掺杂的交替的段。 该方法还包括形成与连续栅极结构的尖端电连接的触点和形成在衬底中的漏极区。 该方法还包括形成与至少一种相反掺杂的交替区段的区段直接电接触的金属区域。

公开(公告)号：US20150041896A1

公开(公告)日：2015-02-12

申请号：US14523076

申请日：2014-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alan B. BOTULA ,  Alvin J. JOSEPH ,  Stephen E. LUCE ,  John J. PEKARIK ,  Yun SHI

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/7834 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/423 ,  H01L29/66575

Abstract: A semiconductor structure and method of manufacture and, more particularly, a field effect transistor that has a body contact and method of manufacturing the same is provided. The structure includes a device having a raised source region of a first conductivity type and an active region below the raised source region extending to a body of the device. The active region has a second conductivity type different than the first conductivity type. A contact region is in electric contact with the active region. The method includes forming a raised source region over an active region of a device and forming a contact region of a same conductivity type as the active region, wherein the active region forms a contact body between the contact region and a body of the device.

公开(公告)号：US20150041895A1

公开(公告)日：2015-02-12

申请号：US14522652

申请日：2014-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William F. CLARK, JR. ,  Qizhi LIU ,  John J. Pekarik ,  Yun SHI ,  Yanli ZHANG

IPC: H01L27/06 ,  H01L29/45 ,  H01L29/735 ,  H01L29/161 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L27/0623 ,  H01L21/823418 ,  H01L21/8249 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/04 ,  H01L29/161 ,  H01L29/402 ,  H01L29/45 ,  H01L29/66659 ,  H01L29/7302 ,  H01L29/735 ,  H01L29/78 ,  H01L29/7817 ,  H01L29/7835

Abstract: Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.

Abstract translation: 本文公开了半导体结构和制造方法。 具体地，本文公开了制造高压金属氧化物半导体场效应晶体管和各种结构的方法。 一种方法包括在FET区域的衬底上形成场效应晶体管（FET），在HVFET区域中的过掺杂掺杂扩散（LDD）漏极上的介质堆叠上形成高电压FET（HVFET），以及 在NPN区域的基板上形成NPN。