摘要:
An integrated circuit includes an array of diodes and an electrode coupled to each diode. The integrated circuit includes a layer of resistance changing material coupled to the electrodes and bit lines coupled to the layer of resistance changing material. The layer of resistance changing material provides a resistance changing element at each intersection of each electrode and each bit line.
摘要:
An integrated circuit includes an array of diodes and an electrode coupled to each diode. The integrated circuit includes a layer of resistance changing material coupled to the electrodes and bit lines coupled to the layer of resistance changing material. The layer of resistance changing material provides a resistance changing element at each intersection of each electrode and each bit line.
摘要:
An integrated circuit comprising an array of memory cells and a corresponding production method are described. Each memory cell comprises a resistively switching memory element and a vertical selection diode coupled to a selection line in a selection line trench for selecting one cell from the plurality of memory cells. A selection line is coupled to the vertical selection diode at one vertical sidewall of the selection line trench.
摘要:
An integrated circuit comprising an array of memory cells and a corresponding production method are described. Each memory cell comprises a resistively switching memory element and a vertical selection diode coupled to a selection line in a selection line trench for selecting one cell from the plurality of memory cells. A selection line is coupled to the vertical selection diode at one vertical sidewall of the selection line trench.
摘要:
An integrated circuit including an array of memory cells and method. In one embodiment, each memory cell includes a resistively switching memory element and a selection diode for selecting one cell from the plurality of memory cells. The memory element is coupled with its top to a first selection line and with its bottom side to the selection diode, the diode further being coupled to the bottom side of a second selection line.
摘要:
An integrated circuit including an array of memory cells and method. In one embodiment, each memory cell includes a resistively switching memory element and a selection diode for selecting one cell from the plurality of memory cells. The memory element is coupled with its top to a first selection line and with its bottom side to the selection diode, the diode further being coupled to the bottom side of a second selection line.
摘要:
An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.
摘要:
A solar cell array is described which can be designed in particular as a thin-film solar module. A production method for a solar cell array is further described.
摘要:
According to one embodiment of the present invention, a method of operating an integrated circuit including a plurality of resistance changing memory cells grouped into physical memory units is provided. The method includes: Monitoring writing access numbers assigned to the physical memory units, each writing access number reflecting the number of writing accesses to the physical memory unit to which the writing access number is assigned; if the value of a writing access number assigned to a first physical memory unit exceeds a writing access threshold value, a data exchange process is carried out during which the data content stored within the first physical memory unit is exchanged with the data content of a second physical memory unit having a writing access number of a lower value.
摘要:
A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.