公开(公告)号：US06255131B1

公开(公告)日：2001-07-03

申请号：US09430133

申请日：1999-10-29

申请人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

发明人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

IPC分类号： H01L2100

CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F2202/104 ,  H01L29/6675 ,  H01L29/78633 ,  H01L29/78648

摘要： A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over the metal film. The steps further include forming a first polycrystalline-silicon layer over the first insulating film, and patterning the first polycrystalline-silicon layer to form a second capacitor electrode as a part of the first capacity element and a second capacity element, while additionally including the steps forming a second insulating film over the polycrystalline-silicon layer, forming a second polycrystalline-silicon layer over the second insulating film, and patterning the second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of the second capacity element.

摘要翻译： 一种形成液晶显示装置的方法，包括以下步骤：在衬底上形成金属膜，图案化金属膜以形成作为第一电容元件的一部分的第一栅电极和第一电容器电极，以及形成第一电容元件 金属膜上的绝缘膜。 所述步骤还包括在所述第一绝缘膜上形成第一多晶硅层，以及图案化所述第一多晶硅层以形成作为所述第一电容元件的一部分的第二电容器电极和第二电容元件， 在所述多晶硅层上形成第二绝缘膜，在所述第二绝缘膜上形成第二多晶硅层，以及使所述第二多晶硅层图案化以形成第二栅电极和第三电容器电极，作为所述第二绝缘膜的第二电容 元件。

公开(公告)号：US06344885B1

公开(公告)日：2002-02-05

申请号：US09285025

申请日：1999-04-01

申请人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

发明人： Ikuko Mori ,  Takuo Kaitoh ,  Hironobu Abe ,  Masahiro Eto ,  Toshihiro Satoh ,  Kazuhiro Ishida ,  Hajime Kudoh

IPC分类号： G02F1136

CPC分类号： G02F1/136213 ,  G02F1/136209 ,  G02F2202/104 ,  H01L29/6675 ,  H01L29/78633 ,  H01L29/78648

摘要： A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.

公开(公告)号：US6144087A

公开(公告)日：2000-11-07

申请号：US35817

申请日：1998-03-06

申请人： Toshihiro Satoh

发明人： Toshihiro Satoh

IPC分类号： H01L21/28 ,  H01L29/861 ,  H01L33/00 ,  H01L29/78

CPC分类号： H01L29/8616 ,  H01L21/28273

摘要： A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening in the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

摘要翻译： 作为栅极间绝缘膜击穿型存储器的半导体非易失性存储器通过在半导体基板1上设置场氧化膜，在场氧化膜上设置栅电极，在栅电极的表面设置掩模氧化膜， 在掩模氧化膜上形成开口并在其上露出的栅电极上形成记忆氧化膜，提供从存储氧化膜上方延伸到掩模氧化膜上方的尺寸的存储栅电极，并使存储器的厚度 氧化膜比掩模氧化膜的厚度薄。

公开(公告)号：US4919591A

公开(公告)日：1990-04-24

申请号：US360463

申请日：1989-06-02

申请人： Takeshi Kamimura ,  Toshihiro Satoh

发明人： Takeshi Kamimura ,  Toshihiro Satoh

IPC分类号： B60S1/48 ,  F04D13/00 ,  F04D15/00 ,  F04D29/44

CPC分类号： F04D15/0016 ,  B60S1/481 ,  F04D29/445 ,  Y10S415/911

摘要： A washer pump for an automobile includes a substantially circular pump chamber receiving concentrically therein an impeller and having an inlet aligned with the center of the impeller and first and second outlets defined in a sidewall of the pump chamber and extending tangentially to the sidewall, and a directional control valve including a valve chamber connected in fluid communication with the pump chamber through the first outlet and also through the second outlet, and a valve element movably disposed in the valve chamber for selectively connecting the first and second outlets, respectively, to first and second washer nozzles of the automobile. The washer pump further includes a projection disposed between the first and second outlets and projecting inwardly from the sidewall of the pump chamber toward the impeller for substantially blocking the flow of a cleaning fluid between the first and second outlets, thereby increasing the pressure difference between the first and second outlets.

摘要翻译： 用于汽车的清洗泵包括基本上圆形的泵室，其中同心地容纳有叶轮，并且具有与叶轮的中心对准的入口，并且第一和第二出口限定在泵室的侧壁中并且与侧壁相切地延伸，并且 方向控制阀，包括通过第一出口和第二出口与泵室流体连通的阀室，以及可移动地设置在阀室中的阀元件，用于选择性地将第一和第二出口连接到第一和第二出口 汽车的第二清洗嘴。 洗涤器泵还包括设置在第一和第二出口之间的突起，并且从泵室的侧壁朝向叶轮向内突出，用于基本上阻挡第一和第二出口之间的清洁流体的流动，从而增加了第二和第二出口之间的压力差 第一和第二出口。

公开(公告)号：US6034890A

公开(公告)日：2000-03-07

申请号：US233921

申请日：1999-01-21

申请人： Toshihiro Satoh

发明人： Toshihiro Satoh

IPC分类号： G11C17/16 ,  H01L21/8246 ,  H01L27/112 ,  G11C16/00

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L27/112

摘要： A first device region is formed in a first well region provided on a semiconductor substrate and a second device region is formed in a second well region, both of which are separated by a field oxidation film, a memory transistor for writing a program is provided in the first device region, an address transistor controlling the writing is provided in the second device region, and a source region of the address transistor and a drain region of the memory transistor are connected by an interconnecting metal to structure a semiconductor nonvolatile memory device which can electrically perform writing only once.

摘要翻译： 第一器件区域形成在设置在半导体衬底上的第一阱区域中，并且第二器件区域形成在第二阱区域中，第二阱区域由场氧化膜分离，用于写入程序的存储晶体管设置在 控制写入的第一器件区域，地址晶体管被提供在第二器件区域中，并且存储晶体管的地址晶体管的源极区域和漏极区域由互连金属连接，以构成半导体非易失性存储器件， 只执行一次写作。

公开(公告)号：US5310702A

公开(公告)日：1994-05-10

申请号：US856094

申请日：1992-03-20

申请人： Toshiki Yoshida ,  Ryuichi Kyomasu ,  Toshihiro Satoh

发明人： Toshiki Yoshida ,  Ryuichi Kyomasu ,  Toshihiro Satoh

IPC分类号： H01L21/60 ,  H01L23/49 ,  H01L21/56

CPC分类号： H01L24/85 ,  H01L24/48 ,  H01L24/78 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/78 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  Y10T29/49121

摘要： A method of preventing the interconnecting fine wires of a bonded semiconductor devices from moving from their preferred loop position after being bonded in an automatic wire bonder includes the step of automatically transferring the bonded semiconductor device to an insulating station prior to other operations. The interconnecting fine wires are coated in a manner which does not disturb or short the interconnecting wire which are pre-cured or cured before being transferred to a storage rack, or directly to a follow-on process step of a continuous production line.

摘要翻译： 一种防止接合的半导体器件的互连细线在自动焊线机中被接合之后从其优选的环路位置移动的方法包括在其它操作之前自动将接合的半导体器件传送到绝缘站的步骤。 相互连接的细线以不会干扰或短路互连线的方式被涂覆，这些互连线在被转移到存储架之前被预固化或固化，或者直接连接到连续生产线的后续工艺步骤。

公开(公告)号：US5435892A

公开(公告)日：1995-07-25

申请号：US113135

申请日：1993-08-30

申请人： Seiji Miyazaki ,  Yasutaka Nakashima ,  Toshihiro Satoh ,  Tadao Ida ,  Etsuji Sato ,  Akio Tani

发明人： Seiji Miyazaki ,  Yasutaka Nakashima ,  Toshihiro Satoh ,  Tadao Ida ,  Etsuji Sato ,  Akio Tani

IPC分类号： B01D3/34 ,  C07C29/82

CPC分类号： B01D3/34 ,  C07C29/82 ,  Y10S203/09 ,  Y10S203/22 ,  Y10S203/24

摘要： A distillation process is used to separate methanol from a mixture of methanol with methyl acrylate or methyl methacrylate, as well as from a mixture of methanol and water with methyl acrylate or methyl methacrylate with the use of an azeotropic solvent, which forms an azeotropic mixture with methanol. In distilling such a mixture by the use of a distillation column:(1) part of the condensate of vapors distilled over from the top of the distillation column top is returned to the top of the column;(2) the remaining condensate is separated into two layers;(3) the upper layer essentially composed of an azeotropic solvent from the two separated layers is fed to an intermediate portion of the distillation column;(4) the lower layer essentially composed of methanol from the above two separated layers is withdrawn from the distillation system; and(5) methyl acrylate or methyl methacrylate, or else, methyl acrylate or methyl methacrylate and water, are recovered from the bottom of the column.Water may be added to the remaining condensate at the time of separation into two layers. The amount of water added is 0.1-10 times the weight of methanol.

摘要翻译： 使用蒸馏方法将甲醇与甲基丙烯酸甲酯或甲基丙烯酸甲酯的混合物以及甲醇与水与丙烯酸甲酯或甲基丙烯酸甲酯的混合物与共沸溶剂分离，其形成与 甲醇。 通过使用蒸馏塔蒸馏这种混合物：（1）从蒸馏塔顶部蒸馏出的蒸气的一部分冷凝物返回到塔的顶部; （2）将剩余的冷凝物分成两层; （3）将来自两个分离层的基本上由共沸溶剂组成的上层进料到蒸馏塔的中间部分; （4）从上述两个分离层的基本上由甲醇组成的下层从蒸馏系统中取出; 和（5）甲基丙烯酸甲酯或甲基丙烯酸甲酯，或者甲基丙烯酸甲酯或甲基丙烯酸甲酯和水从塔的底部回收。 在分离成两层时，可将水加入剩余的冷凝物中。 加入的水的量是甲醇重量的0.1-10倍。

公开(公告)号：US09802262B2

公开(公告)日：2017-10-31

申请号：US14401745

申请日：2012-06-22

申请人： Kazumitsu Harada ,  Hironori Yamamoto ,  Toshihiro Satoh

发明人： Kazumitsu Harada ,  Hironori Yamamoto ,  Toshihiro Satoh

IPC分类号： B23G5/06 ,  B23G7/02

CPC分类号： B23G5/06 ,  B23G7/02 ,  B23G2200/46

摘要： A thread forming tap includes a screw thread formed into a male thread shape with margin portions disposed to project in radial direction and relief portions having a diameter smaller than the margin portions, the margin portions and relief portions alternatively arranged and, thread forming tap causes the margin portions of the screw thread to cut into a surface layer portion of a prepared hole formed in a work to plastically deform the surface layer portion to form a female thread, margin portions are formed into a ridge line shape with a width dimension of zero at least at a thread bottom of the screw thread, and margin portions are formed into a ridge line shape with a width dimension of zero in a range from a thread bottom of the screw thread to a position between the thread bottom and an effective diameter position of the screw thread.

公开(公告)号：US20150158102A1

公开(公告)日：2015-06-11

申请号：US14401745

申请日：2012-06-22

申请人： Kazumitsu Harada ,  Hironori Yamamoto ,  Toshihiro Satoh

发明人： Kazumitsu Harada ,  Hironori Yamamoto ,  Toshihiro Satoh

IPC分类号： B23G5/06

CPC分类号： B23G5/06 ,  B23G7/02 ,  B23G2200/46

摘要： A thread forming tap includes a screw thread formed into a male thread shape with margin portions disposed to project in radial direction and relief portions having a diameter smaller than the margin portions, the margin portions and relief portions alternatively arranged and, thread forming tap causes the margin portions of the screw thread to cut into a surface layer portion of a prepared hole formed in a work to plastically deform the surface layer portion to form a female thread, margin portions are formed into a ridge line shape with a width dimension of zero at least at a thread bottom of the screw thread, and margin portions are formed into a ridge line shape with a width dimension of zero in a range from a thread bottom of the screw thread to a position between the thread bottom and an effective diameter position of the screw thread.

摘要翻译： 螺纹成型丝锥包括形成为阳螺纹形状的螺纹，其具有设置成沿径向突出的边缘部分和具有小于边缘部分的直径的凸出部分，边缘部分和释放部分交替布置，并且螺纹成形丝锥使得 螺纹的边缘部分切割成在工件中形成的预制孔的表面层部分，以使表面层部分塑性变形以形成阴螺纹，边缘部分形成为宽度尺寸为零的棱线形状 至少在螺纹的螺纹底部，并且边缘部分形成为从螺纹的螺纹底部到螺纹底部与螺纹底部与有效直径位置之间的位置的宽度尺寸为零的棱线形状 螺纹。

公开(公告)号：US6165851A

公开(公告)日：2000-12-26

申请号：US328400

申请日：1999-06-09

申请人： Toshihiro Satoh

发明人： Toshihiro Satoh

IPC分类号： H01L21/28 ,  H01L29/861 ,  H01L21/8234

CPC分类号： H01L29/8616 ,  H01L21/28273

摘要： A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening m the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

摘要翻译： 作为栅极间绝缘膜击穿型存储器的半导体非易失性存储器通过在半导体基板1上设置场氧化膜，在场氧化膜上设置栅电极，在栅电极的表面设置掩模氧化膜， 在掩模氧化膜上形成开口，并在其上露出的栅电极上形成记忆氧化膜，提供从存储氧化膜上方延伸到掩模氧化膜上方的尺寸的存储栅电极，并使存储器的厚度 氧化膜比掩模氧化膜的厚度薄。