公开(公告)号：US20240206347A1

公开(公告)日：2024-06-20

申请号：US18081698

申请日：2022-12-15

Applicant: Industrial Technology Research Institute

Inventor： Ziaur Rahaman Shakh ,  Jeng-Hua Wei ,  Siddheswar Maikap

IPC: H10N52/80 ,  H10B61/00 ,  H10N52/00

CPC classification number: H01L43/04 ,  H01L27/222 ,  H01L43/06

Abstract: A magnetic memory structure is provided. The magnetic memory structure includes a plurality of magnetic tunneling junction (MTJ) layers, and a plurality of heavy-metal layers. The plurality of MTJ layers includes: a pinned-layer; a barrier-layer formed under the pinned-layer; and a free-layer formed under the barrier-layer. The plurality of heavy-metal layers is disposed under the free-layer.

公开(公告)号：US11844288B2

公开(公告)日：2023-12-12

申请号：US17168146

申请日：2021-02-04

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang

IPC: H10N52/80 ,  H10N50/85 ,  H10N52/00 ,  H10B61/00

CPC classification number: H10N52/80 ,  H10N50/85 ,  H10N52/00 ,  H10B61/00

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.

公开(公告)号：US12033682B2

公开(公告)日：2024-07-09

申请号：US17563100

申请日：2021-12-28

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang ,  Fang-Ming Chen

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85 ,  H10N52/80

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85 ,  H10N52/80

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.

公开(公告)号：US11227990B2

公开(公告)日：2022-01-18

申请号：US16514523

申请日：2019-07-17

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ziaur Rahaman Shakh ,  I-Jung Wang ,  Jeng-Hua Wei

IPC: H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.

公开(公告)号：US20210150317A1

公开(公告)日：2021-05-20

申请号：US16809522

申请日：2020-03-04

Applicant: Industrial Technology Research Institute

Inventor： Tuo-Hung Hou ,  Shyh-Shyuan Sheu ,  Jeng-Hua Wei ,  Heng-Yuan Lee ,  Ming-Hung Wu

IPC: G06N3/063 ,  G06N3/04 ,  G06N3/08 ,  G11C13/00 ,  G11C11/16 ,  G11C11/54

Abstract: A neuron circuit and an artificial neural network chip are provided. The neuron circuit includes a memristor and an integrator. The memristor generates a pulse train having an oscillation frequency when an applied voltage exceeds a predetermined threshold. The integrator is connected in parallel to the memristor for receiving and accumulating input pulses transmitted by a previous layer network at different times, and driving the memristor to transmit the pulse train to a next layer network when a voltage of the accumulated input pulses exceeds the predetermined threshold.

公开(公告)号：US20200058847A1

公开(公告)日：2020-02-20

申请号：US16664947

申请日：2019-10-28

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Shan-Yi Yang ,  Yao-Jen Chang ,  I-Jung Wang ,  Jeng-Hua Wei

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  G11C11/18

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.

公开(公告)号：US12300292B2

公开(公告)日：2025-05-13

申请号：US18146255

申请日：2022-12-23

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  Shan-Yi Yang ,  Yu-Chen Hsin

IPC: G11C11/00 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.

公开(公告)号：US11758821B2

公开(公告)日：2023-09-12

申请号：US17545794

申请日：2021-12-08

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ziaur Rahaman Shakh ,  I-Jung Wang ,  Jeng-Hua Wei

IPC: H01L43/08 ,  H10N50/10 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/10 ,  H10B61/20 ,  H10N50/80

Abstract: A magnetic memory structure includes a heavy-metal layer, a plurality of magnetic tunneling junction (MTJ) layer, a conductive layer and an insulation layer. In an example, the pinned-layer of the MTJ layers are arranged in a string form and disposed over the barrier-layer. In an example also disclosed, the pinned-layer, the free-layer of the MTJ layers are arranged in a string form. Whereas the pinned-layers are disposed over the barrier-layer and the free-layers are disposed over the heavy-metal layer. The conductive layer is formed under the heavy-metal layer and includes a first conductive portion and a second conductive portion separated from each other and connected with two end of the heavy-metal layer respectively. The insulation layer fills up an interval between the first conductive portion and the second conductive portion. The conductive layer has an electric conductivity higher than that of the heavy-metal layer.

公开(公告)号：US20220109100A1

公开(公告)日：2022-04-07

申请号：US17168146

申请日：2021-02-04

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang

IPC: H01L43/04 ,  H01L43/06 ,  H01L43/10

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an upper electrode and a magnetic tunnel junction. The magnetic tunnel junction is disposed between the heavy metal layer and the upper electrode. The magnetic tunnel junction includes a free layer and a pinned layer. The free layer is disposed on the heavy metal layer, and the free layer has a first film plane area. The pinned layer is disposed on the free layer, and the pinned layer has a second film plane area. There is a preset angle between a long axis direction of a film plane shape of the free layer and a long axis direction of a film plane shape of the pinned layer, and the first film plane area is larger than the second film plane area.

公开(公告)号：US20230178130A1

公开(公告)日：2023-06-08

申请号：US17563100

申请日：2021-12-28

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang ,  Fang-Ming Chen

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L27/222 ,  H01L43/10

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.