公开(公告)号：US09117801B2

公开(公告)日：2015-08-25

申请号：US13894682

申请日：2013-05-15

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Ulrike Fastner ,  Peter Zorn ,  Markus Ottowitz

IPC: H01L21/48 ,  H01L23/498 ,  H01L21/78 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/481 ,  H01L21/2007 ,  H01L21/4846 ,  H01L21/78 ,  H01L23/3171 ,  H01L23/498 ,  H01L24/00 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/15788 ,  H01L2924/00

Abstract: A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.

Abstract translation: 一种制造半导体器件的方法包括：提供具有半导体晶片的叠层和具有开口的玻璃基板和至少一个连接到半导体晶片的沟槽。 半导体晶片包括多个半导体器件。 玻璃基板的开口离开由玻璃基板未覆盖的半导体器件的各个区域，沟槽连接开口。 至少在沟槽和开口的暴露的壁和半导体晶片的半导体器件的未覆盖区域上形成金属层。 通过在开口和沟槽中电镀金属并随后研磨玻璃基底以去除沟槽而形成金属区域。 切割半导体晶片和附着的玻璃基板的叠层以分离半导体器件。

公开(公告)号：US20200027774A1

公开(公告)日：2020-01-23

申请号：US16514632

申请日：2019-07-17

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Walter Leitgeb ,  Daniel Brunner ,  Lukas Ferlan ,  Markus Ottowitz

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/78 ,  B32B38/00 ,  B32B37/12

Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.

公开(公告)号：US10431471B2

公开(公告)日：2019-10-01

申请号：US15137012

申请日：2016-04-25

Applicant: Infineon Technologies AG

Inventor： Carsten Von Koblinski ,  Markus Ottowitz ,  Andreas Riegler

IPC: H01L21/308 ,  H01L21/304 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

Abstract: Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface; and forming a mask layer on the surface of the semiconductor wafer, wherein a thickness of the mask layer is smaller in thinning areas, which are to be thinned for planarizing, than in areas which are not to be thinned for planarizing.

公开(公告)号：US11088009B2

公开(公告)日：2021-08-10

申请号：US16514632

申请日：2019-07-17

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Walter Leitgeb ,  Daniel Brunner ,  Lukas Ferlan ,  Markus Ottowitz

IPC: H01L21/683 ,  H01L21/67 ,  B32B38/00 ,  B32B37/12 ,  H01L21/78

Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.

公开(公告)号：US09748140B1

公开(公告)日：2017-08-29

申请号：US15154677

申请日：2016-05-13

Applicant: Infineon Technologies AG

Inventor： Ursula Hedenig ,  Markus Ottowitz ,  Thomas Grille ,  Carsten von Koblinski

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/687 ,  H01L21/033 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/033 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/68785

Abstract: A method for use in manufacturing semiconductor devices includes providing a wafer on a support, covering a central wafer portion of the wafer, and cutting a marginal wafer portion of the wafer from the wafer. According to an embodiment of an apparatus, the apparatus includes a support configured to support a wafer, a masking device configured to cover a central wafer portion of the wafer, and a cutting device configured to cut a marginal wafer portion of the wafer from the wafer.

公开(公告)号：US20140339694A1

公开(公告)日：2014-11-20

申请号：US13894682

申请日：2013-05-15

Applicant: Infineon Technologies AG

Inventor： Carsten von Koblinski ,  Ulrike Fastner ,  Peter Zorn ,  Markus Ottowitz

IPC: H01L21/48 ,  H01L23/498

CPC classification number: H01L21/481 ,  H01L21/2007 ,  H01L21/4846 ,  H01L21/78 ,  H01L23/3171 ,  H01L23/498 ,  H01L24/00 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/13055 ,  H01L2924/15788 ,  H01L2924/00

Abstract: A method for manufacturing semiconductor devices includes providing a stack having a semiconductor wafer and a glass substrate with openings and at least one trench attached to the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor devices. The openings of the glass substrate leave respective areas of the semiconductor devices uncovered by the glass substrate and the trench connects the openings. A metal layer is formed at least on exposed walls of the trench and the openings and on the uncovered areas of the semiconductor devices of the semiconductor wafer. A metal region is formed by electroplating metal in the openings and the trench and by subsequently grinding the glass substrate to remove the trenches. The stack of the semiconductor wafer and the attached glass substrate is cut to separate the semiconductor devices.

Abstract translation: 一种制造半导体器件的方法包括：提供具有半导体晶片的叠层和具有开口的玻璃基板和至少一个连接到半导体晶片的沟槽。 半导体晶片包括多个半导体器件。 玻璃基板的开口离开由玻璃基板未覆盖的半导体器件的各个区域，沟槽连接开口。 至少在沟槽和开口的暴露的壁和半导体晶片的半导体器件的未覆盖区域上形成金属层。 通过在开口和沟槽中电镀金属并随后研磨玻璃基底以去除沟槽而形成金属区域。 切割半导体晶片和附着的玻璃基板的叠层以分离半导体器件。