公开(公告)号：US10777839B2

公开(公告)日：2020-09-15

申请号：US14229409

申请日：2014-03-28

Applicant: Infineon Technologies AG

Inventor： Rolf Weis ,  Marko Lemke

IPC: H01L21/00 ,  H01M10/04 ,  H01M10/0562 ,  H01M4/04 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/525 ,  H01M4/587 ,  H01M10/0525 ,  H01M4/02

Abstract: A method for forming a battery element includes etching trenches into a substrate and crystal orientation dependent etching of the trenches. Further, the method includes forming solid state battery structures within the trenches.

公开(公告)号：US20150137224A1

公开(公告)日：2015-05-21

申请号：US14082491

申请日：2013-11-18

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/66 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L29/4175 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7826 ,  H01L29/7835

Abstract: A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain region, a channel region, a drift zone, a source contact electrically connected to the source region, a drain contact electrically connected to the drain region, and a gate electrode at the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction. One of the source contact and the drain contact is adjacent to the first main surface, the other one of the source contact and the drain contact is adjacent to a second main surface that is opposite to the first main surface.

Abstract translation: 半导体器件包括形成在具有第一主表面的半导体本体中的晶体管。 晶体管包括源极区，漏极区，沟道区，漂移区，电连接到源极区的源极接触，电连接到漏极区的漏极接触，以及沟道区处的栅电极。 沟道区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。 通道区域具有沿着第一方向延伸的第一脊的形状。 源极接触和漏极接触中的一个与第一主表面相邻，源极接触和漏极接触中的另一个与与第一主表面相对的第二主表面相邻。

公开(公告)号：US20150280271A1

公开(公告)日：2015-10-01

申请号：US14229409

申请日：2014-03-28

Applicant: Infineon Technologies AG

Inventor： Rolf Weis ,  Marko Lemke

IPC: H01M10/04 ,  H01M10/0562

Abstract: A method for forming a battery element includes etching trenches into a substrate and crystal orientation dependent etching of the trenches. Further, the method includes forming solid state battery structures within the trenches.

Abstract translation: 一种形成电池元件的方法包括将沟槽刻蚀成衬底和对沟槽进行晶体取向依赖蚀刻。 此外，该方法包括在沟槽内形成固态电池结构。

公开(公告)号：US20150280198A1

公开(公告)日：2015-10-01

申请号：US14229453

申请日：2014-03-28

Applicant: Infineon Technologies AG

Inventor： Rolf Weis ,  Marko Lemke

IPC: H01M2/18 ,  H01M4/583 ,  H01M10/058 ,  H01M4/525 ,  H01M4/66 ,  H01M10/0562 ,  H01M4/38

CPC classification number: H01M2/18 ,  H01M2/1061 ,  H01M2/1077 ,  H01M2/26 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/386 ,  H01M4/525 ,  H01M4/583 ,  H01M4/587 ,  H01M4/664 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M2220/20 ,  H01M2300/0068 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49108

Abstract: A battery element includes a substrate with a plurality of trenches extending into the substrate. At least a part of each trench of the plurality of trenches is filled with a solid state battery structure. Further, the battery element includes a front side battery element electrode arranged at a front side of the substrate and electrically connected to a first electrode layer of the solid state battery structures within the plurality of trenches. Additionally, the battery element includes a backside battery element electrode arranged at a backside of the substrate and electrically connected to a second electrode layer of the solid state battery structures within the plurality of trenches.

Abstract translation: 电池元件包括具有延伸到衬底中的多个沟槽的衬底。 多个沟槽中的每个沟槽的至少一部分填充有固态电池结构。 此外，电池元件包括布置在基板的前侧的前侧电池元件电极，并且电连接到多个沟槽内的固态电池结构的第一电极层。 此外，电池元件包括布置在基板的背面并与多个沟槽内的固态电池结构的第二电极层电连接的背面电池元件电极。

公开(公告)号：US09735243B2

公开(公告)日：2017-08-15

申请号：US14082491

申请日：2013-11-18

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L27/115 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L29/4175 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7826 ,  H01L29/7835

Abstract: A semiconductor device comprises a transistor formed in a semiconductor body having a first main surface. The transistor comprises a source region, a drain region, a channel region, a drift zone, a source contact electrically connected to the source region, a drain contact electrically connected to the drain region, and a gate electrode at the channel region. The channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction. One of the source contact and the drain contact is adjacent to the first main surface, the other one of the source contact and the drain contact is adjacent to a second main surface that is opposite to the first main surface.

公开(公告)号：US10439030B2

公开(公告)日：2019-10-08

申请号：US15646152

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L29/92 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L27/12 ,  H01L29/06

Abstract: A semiconductor device includes a transistor in a semiconductor body having a first main surface. The transistor includes: a source contact electrically connected to a source region; a drain contact electrically connected to a drain region; a gate electrode at the channel region, the channel region and a drift zone disposed along a first direction between the source and drain regions, the first direction being parallel to the first main surface, the channel region patterned into a ridge by adjacent gate trenches formed in the first main surface, the adjacent gate trenches spaced apart in a second direction perpendicular to the first direction, a longitudinal axis of the ridge extending in the first direction and a longitudinal axis of the gate trenches extending in the first direction; and at least one of the source and drain contacts being adjacent to a second main surface opposite the first main surface.

公开(公告)号：US09859542B2

公开(公告)日：2018-01-02

申请号：US14229453

申请日：2014-03-28

Applicant: Infineon Technologies AG

Inventor： Rolf Weis ,  Marko Lemke

IPC: H01M2/18 ,  H01M2/16 ,  H01M2/10 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/38 ,  H01M4/525 ,  H01M4/583 ,  H01M4/587 ,  H01M4/66 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M6/40 ,  H01M2/26

CPC classification number: H01M2/18 ,  H01M2/1061 ,  H01M2/1077 ,  H01M2/26 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/386 ,  H01M4/525 ,  H01M4/583 ,  H01M4/587 ,  H01M4/664 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M2220/20 ,  H01M2300/0068 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/49108

Abstract: A battery element includes a substrate with a plurality of trenches extending into the substrate. At least a part of each trench of the plurality of trenches is filled with a solid state battery structure. Further, the battery element includes a front side battery element electrode arranged at a front side of the substrate and electrically connected to a first electrode layer of the solid state battery structures within the plurality of trenches. Additionally, the battery element includes a backside battery element electrode arranged at a backside of the substrate and electrically connected to a second electrode layer of the solid state battery structures within the plurality of trenches.

公开(公告)号：US20170317176A1

公开(公告)日：2017-11-02

申请号：US15646152

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L27/12

CPC classification number: H01L29/4175 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7826 ,  H01L29/7835

Abstract: A semiconductor device includes a transistor in a semiconductor body having a first main surface. The transistor includes: a source contact electrically connected to a source region; a drain contact electrically connected to a drain region; a gate electrode at the channel region, the channel region and a drift zone disposed along a first direction between the source and drain regions, the first direction being parallel to the first main surface, the channel region patterned into a ridge by adjacent gate trenches formed in the first main surface, the adjacent gate trenches spaced apart in a second direction perpendicular to the first direction, a longitudinal axis of the ridge extending in the first direction and a longitudinal axis of the gate trenches extending in the first direction; and at least one of the source and drain contacts being adjacent to a second main surface opposite the first main surface.

公开(公告)号：US09705486B1

公开(公告)日：2017-07-11

申请号：US15091384

申请日：2016-04-05

Applicant: Infineon Technologies AG

Inventor： Wolfgang Granig ,  Rolf Weis

IPC: H03K17/687 ,  H03K17/10

CPC classification number: H03K17/102 ,  H03K17/162

Abstract: A semiconductor device is described that includes a transistor chain which is configured as a stacked switch device that switches on and off in response to a drive voltage. The transistor chain includes a first transistor connected in series to a plurality of second transistors. Each transistor in the transistor chain is located at a particular position in the transistor chain according to at least one of a respective capacitance of the transistor and a respective threshold voltage of the transistor.