公开(公告)号：US20050230258A1

公开(公告)日：2005-10-20

申请号：US11057735

申请日：2005-02-14

申请人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

发明人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC分类号： G01N33/00 ,  C25D5/48 ,  G01N27/26

CPC分类号： G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：US20050205424A1

公开(公告)日：2005-09-22

申请号：US11057734

申请日：2005-02-14

申请人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  MacKenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

发明人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  MacKenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC分类号： G01N33/00 ,  G01N27/26

CPC分类号： G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

公开(公告)号：US20050199496A1

公开(公告)日：2005-09-15

申请号：US11057594

申请日：2005-02-14

申请人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

发明人： Frank Dimeo ,  Philip Chen ,  Jeffrey Neuner ,  James Welch ,  Michele Stawasz ,  Thomas Baum ,  Mackenzie King ,  Ing-Shin Chen ,  Jeffrey Roeder

IPC分类号： G01N33/00 ,  G01N27/26

CPC分类号： G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

摘要翻译： 用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器 结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。 独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

公开(公告)号：US20050067304A1

公开(公告)日：2005-03-31

申请号：US10672433

申请日：2003-09-26

申请人： MacKenzie King ,  Weihua Wang ,  Jianwen Han ,  Jeffrey Roeder ,  Steven Lurcott ,  Michele Stawasz

发明人： MacKenzie King ,  Weihua Wang ,  Jianwen Han ,  Jeffrey Roeder ,  Steven Lurcott ,  Michele Stawasz

IPC分类号： C25D21/12 ,  G01N20060101 ,  G01N27/26

CPC分类号： C25D21/12

摘要： The present invention relates to an electrode assembly useful for analyzing metal electroplating solutions. Such electrode assembly comprises a measuring electrode, preferably a rotating disc electrode or a microelectrode, and at least one of an in situ cleaning mechanism, a nucleation and metal growth optimization mechanism, and a voltage limiting mechanism. The present invention also relates to usage of such electrode assembly for in situ cleaning of the measuring electrode, nucleation and metal growth optimization, or voltage limitation.

摘要翻译： 本发明涉及一种用于分析金属电镀溶液的电极组件。 这种电极组件包括测量电极，优选旋转圆盘电极或微电极，以及原位清洁机构，成核和金属生长优化机构中的至少一个以及电压限制机构。 本发明还涉及这种电极组件用于测量电极的原位清洗，成核和金属生长优化或电压限制的用途。

公开(公告)号：US20050255693A1

公开(公告)日：2005-11-17

申请号：US11117274

申请日：2005-04-28

申请人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl Boggs ,  Jeffrey Roeder ,  Thomas Baum

发明人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl Boggs ,  Jeffrey Roeder ,  Thomas Baum

IPC分类号： C09G1/02 ,  C23F3/00 ,  C23F3/06 ,  C23F11/14 ,  H01L21/321 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/44 ,  H01L21/461

CPC分类号： C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  C23F11/141 ,  H01L21/3212

摘要： A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

摘要翻译： 含有5-氨基四唑的CMP组合物，例如与氧化剂，螯合剂，研磨剂和溶剂的组合以及使用方法。 在CMP抛光期间可以稀释这种CMP组合物，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中以及在CMP期间的铜/ CMP组成界面处存在大量水平的铜离子 处理。

公开(公告)号：US20050263490A1

公开(公告)日：2005-12-01

申请号：US11117282

申请日：2005-04-28

申请人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl Boggs ,  Jeffrey Roeder ,  Thomas Baum

发明人： Jun Liu ,  Mackenzie King ,  Michael Darsillo ,  Karl Boggs ,  Jeffrey Roeder ,  Thomas Baum

IPC分类号： C09G1/02 ,  C23F3/00 ,  C23F3/06 ,  C23F11/14 ,  H01L21/321 ,  B24D3/02 ,  B44C1/22 ,  C09C1/68

CPC分类号： C23F3/06 ,  C09G1/02 ,  C23F3/00 ,  C23F11/141 ,  H01L21/3212

摘要： A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.

摘要翻译： 通过稀释钝化CMP组合物并确定稀释程度与铜的静态蚀刻速率之间的关系的方法。 这种关系可以用于在CMP抛光期间控制CMP组成，以尽量减少抛光铜中的凹陷或其他不利平面化缺陷的发生，即使在CMP组合物中和在铜/ CMP处存在大量的铜离子 组合界面。

公开(公告)号：US20070218205A1

公开(公告)日：2007-09-20

申请号：US11750134

申请日：2007-05-17

申请人： Bryan Hendrix ,  James Welch ,  Steven Bilodeau ,  Jeffrey Roeder ,  Chongying Xu ,  Thomas Baum

发明人： Bryan Hendrix ,  James Welch ,  Steven Bilodeau ,  Jeffrey Roeder ,  Chongying Xu ,  Thomas Baum

IPC分类号： C23C16/08

CPC分类号： C23C16/45557 ,  C23C16/0272 ,  C23C16/16 ,  C23C16/18

摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

摘要翻译： 描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。 该方法包括沉积钌成核层，随后沉积高度导电的钌上层。 使用低沉积速率的化学气相沉积（CVD）沉积两层。

公开(公告)号：US20050186341A1

公开(公告)日：2005-08-25

申请号：US10803750

申请日：2004-03-18

申请人： Bryan Hendrix ,  James Welch ,  Steven Bilodeau ,  Jeffrey Roeder ,  Chongying Xu ,  Thomas Baum

发明人： Bryan Hendrix ,  James Welch ,  Steven Bilodeau ,  Jeffrey Roeder ,  Chongying Xu ,  Thomas Baum

IPC分类号： C23C16/00 ,  C23C16/02 ,  C23C16/16 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/45557 ,  C23C16/0272 ,  C23C16/16 ,  C23C16/18

摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

摘要翻译： 描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。 该方法包括沉积钌成核层，随后沉积高度导电的钌上层。 使用低沉积速率的化学气相沉积（CVD）沉积两层。

公开(公告)号：US20060102895A1

公开(公告)日：2006-05-18

申请号：US11273959

申请日：2005-11-15

申请人： Bryan Hendrix ,  Jeffrey Roeder ,  Thomas Baum ,  Tianniu Chen ,  Chongying Xu ,  Gregory Stauf

发明人： Bryan Hendrix ,  Jeffrey Roeder ,  Thomas Baum ,  Tianniu Chen ,  Chongying Xu ,  Gregory Stauf

IPC分类号： H01L29/08 ,  C07F9/00 ,  C07F17/00 ,  H01L21/469

CPC分类号： H01L21/28556 ,  C07F9/00 ,  C07F9/005 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical vapor deposition and atomic layer deposition processes, to form semiconductor device structures, including a dielectric layer, a barrier layer overlying the dielectric layer, and copper metallization overlying the barrier layer, wherein the barrier layer includes a Ta-containing layer including sufficient carbon so that the Ta-containing layer is amorphous. In one preferred implementation, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including a Ta alkylidene compound, at a temperature below 400° C., in a reducing or inert atmosphere.

摘要翻译： 公开了式I-V的钽组合物，其用作形成含钽膜的前体。 钽组合物适用于涉及化学气相沉积和原子层沉积工艺的用途，以形成半导体器件结构，包括电介质层，覆盖电介质层的阻挡层和覆盖在阻挡层上的铜金属化物，其中阻挡层包括 含有Ta的层包含足够的碳，使得含Ta层是无定形的。 在一个优选实施方案中，半导体器件结构通过在还原或惰性气氛中在低于400℃的温度下从含有Ta亚烷基化合物的前体经CVD或ALD沉积含Ta阻挡层来制造。

公开(公告)号：US20050080286A1

公开(公告)日：2005-04-14

申请号：US10870106

申请日：2004-06-17

申请人： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas Baum

发明人： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas Baum

IPC分类号： C07F7/10 ,  C07F7/02

CPC分类号： C07F7/10 ,  H01L21/02271

摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

摘要翻译： 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。