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    OPTICAL DISPERSION COMPENSATOR ON SILICON
    1.
    发明申请
    OPTICAL DISPERSION COMPENSATOR ON SILICON 审中-公开

    公开(公告)号：US20200257050A1

    公开(公告)日：2020-08-13

    申请号：US16835093

    申请日：2020-03-30

    Applicant: INPHI CORPORATION

    Inventor： Xiaoguang TU ,  Radhakrishnan L. NAGARAJAN ,  Masaki KATO

    IPC: G02B6/293 ,  H04B10/2513 ,  G02B6/30 ,  G02B6/122 ,  G02B6/02

    Abstract: An optical dispersion compensator integrated with a silicon photonics system including a first phase-shifter coupled to a second phase-shifter in parallel on the silicon substrate characterized in an athermal condition. The dispersion compensator further includes a third phase-shifter on the silicon substrate to the first phase-shifter and the second phase-shifter through two 2×2 splitters to form an optical loop. A second entry port of a first 2×2 splitter is for coupling with an input fiber and a second exit port of a second 2×2 splitter is for coupling with an output fiber. The optical loop is characterized by a total phase delay tunable via each of the first phase-shifter, the second phase-shifter, and the third phase-shifter such that a normal dispersion (>0) at a certain wavelength in the input fiber is substantially compensated and independent of temperature.

    PACKAGE STRUCTURE FOR PHOTONIC TRANSCEIVING DEVICE
    2.
    发明申请
    PACKAGE STRUCTURE FOR PHOTONIC TRANSCEIVING DEVICE 审中-公开

    公开(公告)号：US20180299629A1

    公开(公告)日：2018-10-18

    申请号：US16013737

    申请日：2018-06-20

    Applicant: INPHI CORPORATION

    Inventor： Radhakrishnan L. NAGARAJAN ,  Peng-Chih LI ,  Masaki KATO

    IPC: G02B6/42 ,  H04B10/516 ,  H04B10/40

    CPC classification number: G02B6/4246 ,  G02B6/421 ,  G02B6/4215 ,  G02B6/4249 ,  G02B6/4256 ,  G02B6/4278 ,  G02B6/428 ,  G02B6/4292 ,  H04B10/40 ,  H04B10/516

    Abstract: A photonic transceiver apparatus in QSFP package. The apparatus includes a case having a base member, two partial side members, and a lid member to provide a spatial volume with an opening at a back end of the base member. Additionally, the apparatus includes a PCB, installed inside the spatial volume over the base member having a pluggable electrical connector at the back end. Further, the apparatus includes multiple optical transmitting devices in mini-transmit-optical-sub-assembly package, each being mounted on a common support structure and having a laser output port in reversed orientation toward the back end. Furthermore, the apparatus includes a silicon photonics chip, including a fiber-to-silicon attachment module, mounted on the PCB and coupled to a modulation driver module and a trans-impedance amplifier module. Moreover, the apparatus includes a pair of optical input/output ports being back connected to the fiber-to-silicon attachment module.

    FIBER COUPLER FOR SILICON PHOTONICS
    4.
    发明申请
    FIBER COUPLER FOR SILICON PHOTONICS 有权

    公开(公告)号：US20180039027A1

    公开(公告)日：2018-02-08

    申请号：US15786156

    申请日：2017-10-17

    Applicant: INPHI CORPORATION

    Inventor： Masaki KATO ,  Radhakrishnan L. NAGARAJAN

    IPC: G02B6/30 ,  G02B6/122 ,  G02B6/136 ,  G02B6/12

    CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/26 ,  G02B2006/12061

    Abstract: An apparatus for converting fiber mode to waveguide mode. The apparatus includes a silicon substrate member and a dielectric member having an elongated body. Part of the elongated body from a back end overlies the silicon substrate member and remaining part of the elongated body up to a front end is separated from the silicon substrate member by a second dielectric material at an under region. The apparatus also includes a waveguide including a segment from the back end to a tail end formed on the dielectric member at least partially overlying the remaining part of the elongated body. The segment is buried in a cladding overlying entirely the dielectric member. The cladding has a refractive index that is less than the waveguide but includes an index-graded section with decreasing index that is formed at least over the segment from the tail end toward the back end.

    OFF QUADRATURE BIASING OF MACH ZEHNDER MODULATOR FOR IMPROVED OSNR PERFORMANCE
    6.
    发明申请
    OFF QUADRATURE BIASING OF MACH ZEHNDER MODULATOR FOR IMPROVED OSNR PERFORMANCE 有权
    关闭用于改进OSNR性能的MACH ZEHNDER调节器的正交偏置

    公开(公告)号：US20170059889A1

    公开(公告)日：2017-03-02

    申请号：US15348018

    申请日：2016-11-10

    Applicant: INPHI CORPORATION

    Inventor： Radhakrishnan L. NAGARAJAN ,  Hari SHANKAR ,  Masaki KATO ,  Yang FU

    IPC: G02F1/01 ,  H04B10/50 ,  G02F1/225

    CPC classification number: G02F1/0123 ,  G02B6/12007 ,  G02F1/0147 ,  G02F1/025 ,  G02F1/225 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2202/105 ,  H01S3/06754 ,  H01S3/1608 ,  H01S5/0085 ,  H01S5/0687 ,  H01S5/4012 ,  H01S5/4087 ,  H04B10/505 ,  H04B10/50575

    Abstract: An integrated optical modulator device. The device can include a driver module coupled to an optical modulator. The optical modulator is characterized by a raised cosine transfer function. This optical modulator can be coupled to a light source and a bias control module, which is configured to apply an off-quadrature bias to the optical modulator. This bias can be accomplished by applying an inverse of the modulator transfer function to the optical modulator in order to minimize a noise variance. This compression function can result in an optimized increased top eye opening for a signal associated with the optical modulator. Furthermore, the optical modulator can be coupled to an EDFA (Erbium Doped Fiber Amplifier) that is coupled to a filter coupled an O/E (Optical-to-Electrical) receiver.

    Abstract translation: 集成光调制器装置。 该装置可以包括耦合到光调制器的驱动器模块。 光调制器的特征在于升高的余弦传递函数。 该光调制器可以耦合到光源和偏置控制模块，该偏置控制模块被配置为向光调制器施加非正交偏置。 可以通过将调制器传递函数的反相应用于光调制器来实现该偏置，以便最小化噪声方差。 该压缩功能可以导致用于与光学调制器相关联的信号的优化的增加的顶部眼睛开度。 此外，光调制器可以耦合到耦合到耦合到O / E（光 - 电）接收器的滤波器的EDFA（掺铒光纤放大器）。

    METHOD FOR DETECTING LOW-POWER OPTICAL SIGNAL WITH HIGH SENSITIVITY
    8.
    发明申请
    METHOD FOR DETECTING LOW-POWER OPTICAL SIGNAL WITH HIGH SENSITIVITY 有权

    公开(公告)号：US20220075115A1

    公开(公告)日：2022-03-10

    申请号：US17012629

    申请日：2020-09-04

    Applicant: INPHI CORPORATION

    Inventor： Jie LIN ,  Masaki KATO ,  Bruno TOURETTE ,  Brian TAYLOR

    IPC: G02B6/12 ,  H04B10/61 ,  H04B10/43

    Abstract: A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.

    GERMANIUM-ON-SILICON AVALANCHE PHOTODETECTOR IN SILICON PHOTONICS PLATFORM, METHOD OF MAKING THE SAME
    9.
    发明申请
    GERMANIUM-ON-SILICON AVALANCHE PHOTODETECTOR IN SILICON PHOTONICS PLATFORM, METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220069153A1

    公开(公告)日：2022-03-03

    申请号：US17011373

    申请日：2020-09-03

    Applicant: INPHI CORPORATION

    Inventor： Yu LI ,  Masaki KATO

    IPC: H01L31/107 ,  H01L31/0232

    Abstract: A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.

    SILICON PHOTONICS BASED FIBER COUPLER
    10.
    发明申请
    SILICON PHOTONICS BASED FIBER COUPLER 审中-公开

    公开(公告)号：US20200379197A1

    公开(公告)日：2020-12-03

    申请号：US16995120

    申请日：2020-08-17

    Applicant: INPHI CORPORATION

    Inventor： Radhakrishnan L. NAGARAJAN ,  Masaki KATO

    IPC: G02B6/43 ,  G02B6/42 ,  G02B6/122

    Abstract: A silicon-based edge coupler for coupling a fiber with a waveguide includes a cantilever member being partially suspended with its anchored end coupled to a silicon photonics die in a first part of a silicon substrate and a free end terminated near an edge region separating a second part of the silicon substrate from the first part. The edge coupler further includes a mechanical stopper formed at the edge region with a gap distance ahead of the free end of the cantilever member. Additionally, a V-groove is formed in the second part of the silicon substrate characterized by a top opening and a bottom plane symmetrically connected by two sloped side walls along a fixed Si-crystallography angle. The V-groove is configured to support a fiber with an end facet being pushed against the mechanical stopper and a core center being aligned with the free end of the cantilever member.

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