公开(公告)号：US10121701B2

公开(公告)日：2018-11-06

申请号：US15220143

申请日：2016-07-26

Applicant: Intel Corporation

Inventor： Harold Ryan Chase ,  Mihir K. Roy ,  Mathew J. Manusharow ,  Mark Hlad

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/36 ,  H01L23/48 ,  H05K1/02 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552 ,  H05K3/46

Abstract: Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.

公开(公告)号：US20160336223A1

公开(公告)日：2016-11-17

申请号：US15220143

申请日：2016-07-26

Applicant: Intel Corporation

Inventor： Harold Ryan Chase ,  Mihir K. Roy ,  Mathew J. Manusharow ,  Mark Hlad

IPC: H01L21/768 ,  H01L23/36 ,  H01L21/288

CPC classification number: H01L21/76879 ,  H01L21/288 ,  H01L21/76838 ,  H01L23/00 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/552 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H05K1/0219 ,  H05K1/0222 ,  H05K3/4602 ,  H05K2201/09581 ,  H01L2924/014

Abstract: Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.

公开(公告)号：US10856424B2

公开(公告)日：2020-12-01

申请号：US15762856

申请日：2015-09-25

Applicant: Intel Corporation

Inventor： Sri Ranga Sai Boyapati ,  Amanda E. Schuckman ,  Sashi S. Kandanur ,  Srinivas Pietambaram ,  Mark Hlad ,  Kristof Darmawikarta

IPC: C25D3/38 ,  H05K3/42 ,  H05K3/46

Abstract: A method that includes electroplating both sides of a core and the through hole of a core with a conductive material to cover both sides of the core with the conductive material and to form a conductive bridge in the through hole, wherein the core has a thickness greater than 200 microns; etching the conductive material that covers both sides of the core to reduce the thickness of the conductive material to about 1 micron; applying a film resist to the core; exposing and developing the resist film to form patterns on the conductive material on both sides of the core; and electroplating additional conductive material on the (i) conductive material on both sides of the core (ii) conductive material within the through hole; and (iii) conductive bridge to fill the through hole with conductive material without any voids and to form conductive patterns on both sides of the core.

公开(公告)号：US10734282B2

公开(公告)日：2020-08-04

申请号：US16141181

申请日：2018-09-25

Applicant: Intel Corporation

Inventor： Harold Ryan Chase ,  Mihir K Roy ,  Mathew J Manusharow ,  Mark Hlad

IPC: H05K1/02 ,  H01L23/00 ,  H01L23/48 ,  H01L21/768 ,  H01L21/288 ,  H05K3/46 ,  H01L23/552 ,  H01L23/498 ,  H01L23/36

Abstract: Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.

公开(公告)号：US20190027405A1

公开(公告)日：2019-01-24

申请号：US16141181

申请日：2018-09-25

Applicant: Intel Corporation

Inventor： Harold Ryan Chase ,  Mihir K. Roy ,  Mathew J. Manusharow ,  Mark Hlad

IPC: H01L21/768 ,  H05K1/02 ,  H01L23/00 ,  H01L23/48 ,  H01L21/288 ,  H05K3/46 ,  H01L23/552 ,  H01L23/498 ,  H01L23/36

Abstract: Embodiments of substrates, semiconductor devices and methods are shown that include elongated structures to improve conduction. Elongated structures and methods are also shown that provide electromagnetic isolation to reduce noise in adjacent components.