Techniques for Non-Volatile Memory Page Retirement

    公开(公告)号:US20180189154A1

    公开(公告)日:2018-07-05

    申请号:US15394261

    申请日:2016-12-29

    CPC classification number: G06F3/0659 G06F3/0619 G11C7/14 G11C29/00 G11C29/52

    Abstract: Examples herein include techniques for flash page retirement following one or more defects in nonvolatile memory. In some examples, a storage controller may retire a first logical page in response to a first read error, and write data to the one or more NMV devices in a program-erase (P/E) cycle without a dummy page being programmed or generated for the retired first logical page. The storage controller may further retire a second logical page in response to a second read error, wherein the first logical page has a higher order than the second logical page in a same physical memory page.

    GRADUAL CONTEXT SAVING IN A DATA STORAGE DEVICE
    2.
    发明申请
    GRADUAL CONTEXT SAVING IN A DATA STORAGE DEVICE 有权
    在数据存储设备中保存的格式上下文

    公开(公告)号:US20160170641A1

    公开(公告)日:2016-06-16

    申请号:US14572581

    申请日:2014-12-16

    Abstract: The present disclosure is directed to gradual context saving in a data storage device. An example data storage device may comprise at least a non-volatile memory and a control module. The control module may cause context data to be gradually saved to the non-volatile memory based on monitoring write activity to the nonvolatile memory, wherein the context data may correspond to a current state of the data storage device. The control module may cause context data to be saved based on a budget ratio. For example, a budget ratio may compare an amount of total budget consumed (e.g., based a capacity of the data storage device, an amount of data stored in the data storage device, a target time-to-ready for the data storage device, etc.) to an amount of total context data that has already been written to the non-volatile memory.

    Abstract translation: 本公开涉及在数据存储设备中逐渐上下文保存。 示例性数据存储设备可以包括至少一个非易失性存储器和控制模块。 控制模块可以基于监视对非易失性存储器的写入活动,使上下文数据逐渐保存到非易失性存储器,其中上下文数据可对应于数据存储设备的当前状态。 控制模块可以基于预算比率来导致上下文数据被保存。 例如,预算比可以比较所消耗的总预算量(例如,基于数据存储设备的容量,存储在数据存储设备中的数据量,数据存储设备的准备时间, 等等)到已经写入非易失性存储器的总上下文数据的量。

    PSEUDO SINGLE PASS NAND MEMORY PROGRAMMING
    3.
    发明申请

    公开(公告)号:US20190096490A1

    公开(公告)日:2019-03-28

    申请号:US15717835

    申请日:2017-09-27

    Abstract: Embodiments include apparatuses, methods, and computer devices including a multi-level NAND memory array and a memory controller coupled to the multi-level NAND memory array. The multi-level NAND memory array may include a first word line and a second word line. The memory controller may receive a first page of data and a second page of data together with a program command to program the first page of data and the second page of data into the multi-level NAND memory array. The memory controller may program the first page of data into a page of the first word line via a first pass, and further program the second page of data into a page of the second word line via a second pass, subsequent to the first pass. Other embodiments may also be described and claimed.

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