Abstract:
Examples herein include techniques for flash page retirement following one or more defects in nonvolatile memory. In some examples, a storage controller may retire a first logical page in response to a first read error, and write data to the one or more NMV devices in a program-erase (P/E) cycle without a dummy page being programmed or generated for the retired first logical page. The storage controller may further retire a second logical page in response to a second read error, wherein the first logical page has a higher order than the second logical page in a same physical memory page.
Abstract:
The present disclosure is directed to gradual context saving in a data storage device. An example data storage device may comprise at least a non-volatile memory and a control module. The control module may cause context data to be gradually saved to the non-volatile memory based on monitoring write activity to the nonvolatile memory, wherein the context data may correspond to a current state of the data storage device. The control module may cause context data to be saved based on a budget ratio. For example, a budget ratio may compare an amount of total budget consumed (e.g., based a capacity of the data storage device, an amount of data stored in the data storage device, a target time-to-ready for the data storage device, etc.) to an amount of total context data that has already been written to the non-volatile memory.
Abstract:
Embodiments include apparatuses, methods, and computer devices including a multi-level NAND memory array and a memory controller coupled to the multi-level NAND memory array. The multi-level NAND memory array may include a first word line and a second word line. The memory controller may receive a first page of data and a second page of data together with a program command to program the first page of data and the second page of data into the multi-level NAND memory array. The memory controller may program the first page of data into a page of the first word line via a first pass, and further program the second page of data into a page of the second word line via a second pass, subsequent to the first pass. Other embodiments may also be described and claimed.
Abstract:
Apparatus, systems, and methods to implement dynamic memory management in nonvolatile memory devices are described. In one example, a controller comprises logic to monitor at least one performance parameter of a nonvolatile memory, determine when the at least one performance parameter passes a threshold which indicates a degradation in performance for the nonvolatile memory, and in response to the at least one performance parameter passing the threshold, to modify at least one operational attribute of the nonvolatile memory. Other examples are also disclosed and claimed.