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公开(公告)号：US20210288251A1
公开(公告)日：2021-09-16
申请号：US16814372
申请日：2020-03-10
发明人： Cheng-Wei Cheng , Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
摘要： An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.
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公开(公告)号：US11271155B2
公开(公告)日：2022-03-08
申请号：US16814372
申请日：2020-03-10
发明人： Cheng-Wei Cheng , Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
摘要： An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.
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3.发明申请公开(公告)号：US20180331284A1
公开(公告)日：2018-11-15
申请号：US15590014
申请日：2017-05-09
发明人： Matthew J. BrightSky , Fabio Carta , Huai-Yu Cheng , Wanki Kim
CPC分类号： H01L45/141 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1608 , H01L45/1666 , H01L45/1683
摘要： A memory access device that includes a first terminal with a first terminal workfunction and a chalcogenide-based selector layer with a first surface and a second surface opposite the first surface. A first control metal layer is positioned in physical and electrical contact with the first terminal and the first surface of the chalcogenide-based selector layer. The first control metal layer includes a first control workfunction different than the first terminal workfunction. A second terminal with a second terminal workfunction is positioned proximate the second surface of the chalcogenide-based selector layer.
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公开(公告)号：US09882126B2
公开(公告)日：2018-01-30
申请号：US15095023
申请日：2016-04-09
CPC分类号： H01L45/1233 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/124 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A phase change storage device, Integrated Circuit (IC) chip including the devices and method of manufacturing IC chips with the devices. The device includes a phase change storage region with multiple phase change regions, e.g., two (2), of different phase change material serially-connected between said program/read line and a select device conduction terminal.
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公开(公告)号：US20170294578A1
公开(公告)日：2017-10-12
申请号：US15095023
申请日：2016-04-09
CPC分类号： H01L45/1233 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/065 , H01L45/124 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A phase change storage device, Integrated Circuit (IC) chip including the devices and method of manufacturing IC chips with the devices. The device includes a phase change storage region with multiple phase change regions, e.g., two (2), of different phase change material serially-connected between said program/read line and a select device conduction terminal.
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公开(公告)号：US10541271B2
公开(公告)日：2020-01-21
申请号：US15787274
申请日：2017-10-18
发明人： Huai-Yu Cheng , Hsiang-Lan Lung , I-Ting Kuo
摘要： A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.
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公开(公告)号：US11289540B2
公开(公告)日：2022-03-29
申请号：US17205767
申请日：2021-03-18
发明人： Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
IPC分类号： H01L27/24
摘要： An ovonic threshold switch includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.
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公开(公告)号：US09917252B2
公开(公告)日：2018-03-13
申请号：US14936318
申请日：2015-11-09
发明人： Huai-Yu Cheng , Hsiang-Lan Lung
CPC分类号： H01L45/148 , C22C12/00 , C22C28/00 , C22C30/00 , H01B1/02 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/16 , H01L45/1625
摘要： A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.
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9.发明授权Method for making memory cell by melting phase change material in confined space 有权通过在密闭空间中熔化相变材料来制造记忆体的方法公开(公告)号：US08916414B2
公开(公告)日：2014-12-23
申请号：US14038459
申请日：2013-09-26
发明人： Huai-Yu Cheng , Hsiang-Lan Lung
CPC分类号： H01L45/1641 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole.
摘要翻译： 为了形成具有相变元件的存储单元，通过绝缘体到底部电极形成孔，并且在覆盖该孔的绝缘体表面上沉积相变材料。 在相变材料上形成约束结构，使得当加热熔化时，相变材料膨胀到孔中以与底部电极电连接。 顶部电极形成在相变材料上并电连接到相变材料上。 底部电极可以包括主要部分和具有减小的横向尺寸的延伸部。 限制结构可以包括具有比相变材料更高的熔化温度的封盖材料，以及当相变材料熔化和膨胀时具有足够的拉伸强度以确保相变材料移动到孔中。 孔可以是J形孔。
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公开(公告)号：US11355552B2
公开(公告)日：2022-06-07
申请号：US16986316
申请日：2020-08-06
发明人： Huai-Yu Cheng , I-Ting Kuo , Hsiang-Lan Lung
摘要： A memory material and a memory device applying the same are provided. The memory material is a chalcogenide doped with carbon atom. The chalcogenide contains arsenic (As) atom, selenium (Se) atom, germanium (Ge) atom and silicon (Si) atom.
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