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    METHOD TO PRODUCE HIGHLY TRANSPARENT HYDROGENATED CARBON PROTECTIVE COATING FOR TRANSPARENT SUBSTRATES
    4.
    发明申请
    METHOD TO PRODUCE HIGHLY TRANSPARENT HYDROGENATED CARBON PROTECTIVE COATING FOR TRANSPARENT SUBSTRATES 有权
    生产用于透明基板的高透明加氢碳保护涂层的方法

    公开(公告)号：US20140008214A1

    公开(公告)日：2014-01-09

    申请号：US13935993

    申请日：2013-07-05

    申请人： Intevac, Inc.

    发明人： David Fang Wei Chen ,  David Ward Brown ,  Charles Liu ,  Samuel D. Harkness, IV

    IPC分类号： C23C14/34

    CPC分类号： C23C14/0057 ,  C23C14/0605 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3426

    摘要： A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

    摘要翻译： 用于沉积透明且透明的氢化碳（例如氢化金刚石样碳）的物理气相沉积（PVD）室。 室主体被构造成用于在其中维持真空条件，腔体在其侧壁上具有孔。 具有孔口的等离子体保持架附接到侧壁，使得孔口与孔口重叠。 两个溅射靶位于等离子体笼内部的阴极上，并且彼此相对定向，并且被配置为在等离子体笼内保持等离子体并限制在其间。 笼内的等离子体从靶中溅出材料，然后其通过孔口和孔径并落在基底上。 在处理过程中，基板以传递方式连续移动。

    SYSTEM AND METHOD FOR COMMERCIAL FABRICATION OF PATTERNED MEDIA
    5.
    发明申请
    SYSTEM AND METHOD FOR COMMERCIAL FABRICATION OF PATTERNED MEDIA 审中-公开

    公开(公告)号：US20130098761A1

    公开(公告)日：2013-04-25

    申请号：US13712916

    申请日：2012-12-12

    申请人： Intevac, Inc.

    发明人： Kevin P. Fairbairn ,  Michael S. Barnes ,  Terry Bluck ,  Ren Xu ,  Charles Liu ,  Ralph Kerns

    IPC分类号： G11B5/84

    CPC分类号： G11B5/84 ,  G11B5/855 ,  H01J37/3438

    摘要： A system is provided for etching patterned media disks for hard drive. The modular system may be tailored to perform specific processes sequences so that a patterned media disk is fabricated without removing the disk from vacuum environment. In some sequence the magnetic stack is etched while in other the etch is performed prior to forming the magnetic stack. In a further sequence ion implantation is used without etching steps. For etching a movable non-contact electrode is utilized to perform sputter etch. The cathode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched.

    SYSTEM ARCHITECTURE FOR COMBINED STATIC AND PASS-BY PROCESSING
    8.
    发明申请
    SYSTEM ARCHITECTURE FOR COMBINED STATIC AND PASS-BY PROCESSING 有权
    用于组合静态和通过处理的系统架构

    公开(公告)号：US20130161183A1

    公开(公告)日：2013-06-27

    申请号：US13728145

    申请日：2012-12-27

    申请人： Intevac, Inc.

    发明人： Patrick Leahey ,  Eric Lawson ,  Charles Liu ,  Terry Bluck ,  Kevin P. Fairbairn ,  Robert L. Ruck ,  Samuel D. Harkness, IV

    IPC分类号： C23C14/34

    CPC分类号： C23C14/34 ,  C23C14/50 ,  C23C14/566 ,  C23C14/568

    摘要： Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

    摘要翻译： 公开了一种能够组合静态和通过处理的衬底处理系统。 此外，还提供了一种减小占位面积的系统架构。 该系统构造成使得基板在其中垂直处理，并且每个室具有附接到其一个侧壁的处理源，其中另一个侧壁返回到互补处理室。 室系统可以从单块金属例如铝碾磨，其中块从两侧铣削，使得壁保持并分离每两个补充处理室。