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公开(公告)号：US20250087472A1
公开(公告)日：2025-03-13
申请号：US18367759
申请日：2023-09-13
Applicant: INTEVAC, INC.
Inventor： Samuel D. Harkness, IV , James Sullivan , Eric C. Lawson
Abstract: In an apparatus and related method, a substrate that has multiple facets is held in a chamber of a plasma reactor that has multiple plasma cavities. The substrate is positioned by a transport arrangement with each plasma cavity of the plasma reactor aligned to a facet of the substrate. A plasma is generated in each plasma cavity, to apply simultaneous plasma processing to multiple facets of the substrate.
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公开(公告)号：US20240258087A1
公开(公告)日：2024-08-01
申请号：US18535774
申请日：2023-12-11
Applicant: INTEVAC, INC.
Inventor： Samuel D. Harkness, IV , Thomas P. Nolan , Jae Ha Choi , Alexander Vassilievich Demtchouk , Terry Bluck
CPC classification number: H01J37/3452 , C23C14/35 , C23C14/50 , H01J37/3423 , H01J2237/002 , H01J2237/332
Abstract: Sputtering system having cylindrical target with sputtering material on exterior surface; magnet arrangement inside the cylindrical target, having first set of magnets arranged on straight row, each having first pole facing interior wall of the target and second pole facing away from the interior wall, second set having plurality of magnets arranged in obround shape around the first set, each magnet having first pole facing away from the interior wall and second pole facing the interior wall; a keeper plate between the first set of magnets and the second set of magnets, such that straight line passing through an axis connecting the first pole and the second pole of a magnet from the second set intercepts the keeper plate prior to reaching the interior wall; and a cover.
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公开(公告)号：US20240191341A1
公开(公告)日：2024-06-13
申请号：US18537523
申请日：2023-12-12
Applicant: INTEVAC, INC.
Inventor： Samuel D. Harkness, IV , Thomas P. Nolan , Stephen M. Daly , Jae Ha Choi , Zachary Lyons , Jim Sullivan , Mike Anthony , Todd Morimoto
CPC classification number: C23C14/352 , C23C14/50 , C23C14/568
Abstract: A plasma chamber for physical vapor deposition, having an anode aperture shield that reduces the field of view to the substrate for deposition particles from the sputtering target. The anode aperture shield limits the deposition particles reaching the substrate to selected maximum angles from the vertical, and rejects particles approaching with a larger angle from the vertical. The node aperture shield is grounded and may be constructed of an upper plate and a lower plate spaced apart from the upper plate, wherein the upper plate may include perforations or may incorporate an electron filter.
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公开(公告)号：US20230274920A1
公开(公告)日：2023-08-31
申请号：US18110269
申请日：2023-02-15
Applicant: INTEVAC, INC.
Inventor： Terry Bluck , Samuel D. Harkness, IV , Tom Nolan
CPC classification number: H01J37/3405 , H01J37/3452 , H01J37/32761 , H01J37/3244 , H01J37/32623
Abstract: A linear processing system having an entry loadlock, a first multi-pass processing chamber coupled to the entry loadlock, the first multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; a single-pass chamber coupled to the first multi-pass processing chamber and having a plurality of magnetron arrangements arranged along a carrier travel direction, the single-pass chamber configured to house multiple carriers arranged serially in a row and configured for a single-pass processing; a second multi-pass processing chamber coupled to the single-pass processing chamber, the second multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; and an exit loadlock chamber coupled to the second multi-pass processing chamber.
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公开(公告)号：US20180171463A1
公开(公告)日：2018-06-21
申请号：US15899064
申请日：2018-02-19
Applicant: Intevac, Inc.
Inventor： Patrick Leahey , Eric Lawson , Charles Liu , Terry Bluck , Kevin P. Fairbairn , Robert L. Ruck , Samuel D. Harkness, IV
Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.
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Patent Agency Ranking
公开(公告)号：US12077851B2
公开(公告)日：2024-09-03
申请号：US17306054
申请日：2021-05-03
Applicant: INTEVAC, INC.
Inventor： Terry Bluck , Samuel D. Harkness, IV
CPC classification number: C23C14/5873 , C03C17/3411 , C23C14/042 , H04M1/0283 , C03C2217/425 , C03C2217/45
Abstract: A method for forming thin film layer having micro-voids therein. The method proceeds by dispersing micro-particles over the surface of a substrate. The micro particles are made of sublimable material. Then the thin film layer is formed over the surface, so as to cover the particles. The thin film is then etched back so as to expose the particles at least partially. The material of the particles is then sublimed, e.g., by heating the substrate, thereby leaving micro-voids inside the thin film layer. The micro voids can be filled or remain exposed to generate textured surface.
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公开(公告)号：US09914994B2
公开(公告)日：2018-03-13
申请号：US13728145
申请日：2012-12-27
Applicant: Intevac, Inc.
Inventor： Patrick Leahey , Eric Lawson , Charles Liu , Terry Bluck , Kevin P. Fairbairn , Robert L. Ruck , Samuel D. Harkness, IV
CPC classification number: C23C14/34 , C23C14/50 , C23C14/566 , C23C14/568
Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.
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公开(公告)号：US20130161183A1
公开(公告)日：2013-06-27
申请号：US13728145
申请日：2012-12-27
Applicant: Intevac, Inc.
Inventor： Patrick Leahey , Eric Lawson , Charles Liu , Terry Bluck , Kevin P. Fairbairn , Robert L. Ruck , Samuel D. Harkness, IV
IPC: C23C14/34
CPC classification number: C23C14/34 , C23C14/50 , C23C14/566 , C23C14/568
Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.
Abstract translation: 公开了一种能够组合静态和通过处理的衬底处理系统。 此外，还提供了一种减小占位面积的系统架构。 该系统构造成使得基板在其中垂直处理，并且每个室具有附接到其一个侧壁的处理源，其中另一个侧壁返回到互补处理室。 室系统可以从单块金属例如铝碾磨，其中块从两侧铣削，使得壁保持并分离每两个补充处理室。
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公开(公告)号：US10752987B2
公开(公告)日：2020-08-25
申请号：US15899064
申请日：2018-02-19
Applicant: Intevac, Inc.
Inventor： Patrick Leahey , Eric Lawson , Charles Liu , Terry Bluck , Kevin P. Fairbairn , Robert L. Ruck , Samuel D. Harkness, IV
Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.
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10.发明申请公开(公告)号：US20170152592A1
公开(公告)日：2017-06-01
申请号：US15432815
申请日：2017-02-14
Applicant: Intevac, Inc.
Inventor： David Fang Wei Chen , David Ward Brown , Charles Liu , Samuel D. Harkness, IV
CPC classification number: C23C14/0057 , C23C14/0605 , C23C14/3464 , C23C14/35 , C23C14/562 , H01J37/3426
Abstract: A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.
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