公开(公告)号：US5254214A

公开(公告)日：1993-10-19

申请号：US764428

申请日：1991-09-23

申请人： Isamu Hijikata ,  Kazutoshi Fujisawa

发明人： Isamu Hijikata ,  Kazutoshi Fujisawa

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/31051

摘要： A plasma processing apparatus has a chamber which houses therein a plasma processing region and a plasma generating region spaced therefrom. An object such as a semiconductor wafer, which has surface irregularities including lands, is placed in the plasma processing region. When a plasma is generated in the plasma generating region with a processing gas composed mainly of an argon gas being introduced into the chamber, the corner edges of the lands of the object are etched into a taper shape, and the material etched away from the object is deposited between the lands.

摘要翻译： 等离子体处理装置具有容纳等离子体处理区域和与其间隔开的等离子体产生区域的室。 诸如半导体晶片的具有包括焊盘的表面凹凸的物体被放置在等离子体处理区域中。 当在等离子体产生区域中产生等离子体的情况下，主要由氩气被引入室内的处理气体时，物体的焊盘的角部边缘被蚀刻成锥形，并且从物体上蚀刻的材料 沉积在土地之间。

公开(公告)号：US4900582A

公开(公告)日：1990-02-13

申请号：US197021

申请日：1988-05-20

申请人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

发明人： Muneo Nakayama ,  Akira Hashimoto ,  Toshihiro Nishimura ,  Eiichi Kashiwagi ,  Isamu Hijikata

IPC分类号： C04B41/80 ,  C01B33/12 ,  C23C18/12 ,  H01L21/316 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L23/296 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2924/09701

摘要： A coating solution for forming a silica-based film, having a given viscosity, is coated on a substrate such as a silicon wafer, this coating solution is dried to form a silica-based film, and this silica-based film is exposed to ultraviolet radiation in an atmosphere containing ozone at room temperature or while heating it preferably at a temperature of not more than 300.degree. C., particularly at a temperature of from 50.degree. to 200.degree. C., by means of a heating member such as a hot plate.The film quality of the silica-based film can be improved by exposing it to ultraviolet radiation in the atmosphere containing ozone.

摘要翻译： 将具有给定粘度的二氧化硅基膜形成用涂布液涂布在硅晶片等基板上，将该涂布液干燥，形成二氧化硅系膜，将该二氧化硅系膜暴露于紫外线 在室温下含有臭氧的气氛中或在不高于300℃，特别是在50℃至200℃的温度下，通过加热构件如热 盘子。 二氧化硅基膜的膜质量可以通过在含有臭氧的大气中暴露于紫外线而得到改善。

公开(公告)号：USD291413S

公开(公告)日：1987-08-18

申请号：US689661

申请日：1985-01-08

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

设计人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

公开(公告)号：US5584647A

公开(公告)日：1996-12-17

申请号：US006162

申请日：1993-01-19

申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。

公开(公告)号：US4946537A

公开(公告)日：1990-08-07

申请号：US371743

申请日：1989-06-26

申请人： Isamu Hijikata ,  Akira Uehara

发明人： Isamu Hijikata ,  Akira Uehara

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  H01J37/3266 ,  H05H1/46

摘要： A plasma reactor includes a chamber, a specimen such as a wafer or the like supported in the chamber, a device for generating a plasma in the chamber, and at least one electromagnetic coil disposed coaxially around the chamber. The specimen is supported parallel to a magnetic field generated by the electromagnetic coil. High-density and high-energy charged particles in the plasma collide perpendicularly with the surface of the specimen to treat the specimen by way of etching or the like.

摘要翻译： 等离子体反应器包括室，诸如支撑在室中的晶片等的样品，用于在室中产生等离子体的装置，以及围绕室同轴设置的至少一个电磁线圈。 样本被平行于由电磁线圈产生的磁场支撑。 等离子体中的高密度和高能带电粒子与样品的表面垂直地碰撞，以通过蚀刻等方式对样品进行处理。

公开(公告)号：US4550239A

公开(公告)日：1985-10-29

申请号：US424503

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： B65G49/07 ,  H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67778 ,  H01L21/67781 ,  Y10S156/912 ,  Y10S414/137 ,  Y10S414/14

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

公开(公告)号：US5006220A

公开(公告)日：1991-04-09

申请号：US479988

申请日：1990-02-14

申请人： Isamu Hijikata ,  Akira Uehara ,  Mitsuo Samezawa

发明人： Isamu Hijikata ,  Akira Uehara ,  Mitsuo Samezawa

IPC分类号： H01L21/31 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01H1/46 ,  B01J19/12 ,  C23F4/04

CPC分类号： H01J37/32559 ,  Y10S156/914

摘要： An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by CVD coating process.

摘要翻译： 用于通过等离子体反应处理诸如半导体晶片的物体的电极至少具有由碳化硅形成的表面层。 电极包括基底，并且通过CVD涂覆工艺在基底的表面上形成碳化硅表面层。

公开(公告)号：US4578559A

公开(公告)日：1986-03-25

申请号：US649164

申请日：1984-09-10

申请人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

发明人： Isamu Hijikata ,  Akira Uehara ,  Hisashi Nakane

IPC分类号： C23F4/00 ,  C03C15/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00 ,  H01L21/306

CPC分类号： H01J37/32431 ,  C03C15/00

摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.

摘要翻译： 使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。 该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。 蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

公开(公告)号：US4550242A

公开(公告)日：1985-10-29

申请号：US424287

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67781 ,  H01L21/67778 ,  Y10S156/912 ,  Y10S414/137

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.

摘要翻译： 一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收 来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

公开(公告)号：US5083896A

公开(公告)日：1992-01-28

申请号：US406796

申请日：1989-09-13

申请人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

发明人： Akira Uehara ,  Isamu Hijikata ,  Mitsuaki Minato

IPC分类号： B25J9/06 ,  B25J9/04 ,  B25J21/00 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/68707 ,  B25J21/005 ,  B25J9/042 ,  H01L21/67742 ,  Y10S414/135 ,  Y10T74/20207

摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.

摘要翻译： 物体处理装置连续地传送诸如半导体晶片的物体。 物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于 转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元 第三驱动轴围绕它们自己的轴彼此独立。