摘要:
There is provided an abrasive used for polishing a substrate which comprises silica as a main component, for example a rock crystal, a quartz glass for photomask, for CMP of an organic film, Inter Layer Dielectric (ILD) and shallow trench isolation of a semiconductor device, or for polishing a hard disk made of glass.A sol which particles are dispersed in a medium, wherein the particles have a particle size of 0.005 to 1 μm and comprise as a main component crystalline cerium oxide of the cubic system and as an additional component a lanthanum compound, a neodymium compound or a combination thereof, wherein the additional component is contained in X/(Ce+X) molar ratio of 0.001 to 0.5 in which X is lanthanum atoms, neodymium atoms or a combination thereof.The sol is prepared by reacting an aqueous solution which a cerium (III) salt is mixed with a lanthanum (III) salt and/or a neodymium (III) salt, with an alkaline substance to give a suspension in which cerium (III) hydroxide is homogeneously mixed with lanthanum (III) hydroxide and/or neodymium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension.
摘要:
The present invention provides an abrasive compound suitable for polishing the surface of a glass substrate for an optical disk platter or a magnetic disk platter. More specifically, the present invention provides an abrasive compound for a glass hard disk platter, characterized as comprising a stable slurry having water and, dispersed therein as an abrasive, cerium(IV) oxide particles having an average secondary particle size of 0.1 to 0.5 μm and containing CeO2 in a concentration of 0.2 to 30 wt %. Preferably, the present invention provides the above abrasive compound in which cerium amounts for 95% or more in terms of oxides of the total amount of rare earth elements in the abrasive.
摘要:
Substantially monodisperse crystalline ceric oxide sols and processes for producing such sols are provided. Sols include crystalline ceric oxide particles having a particle size I (particle size converted from specific surface area by gas absorption method) ranging from 10 nm to 200 nm and a ratio of particle size II (particle size measured by dynamic light scattering method) to particle size I ranging from 2 to 6. Sols can be prepared by reacting a cerium (III) salt with an alkaline substance in an aqueous medium under an inert gas atmosphere to obtain a suspension of cerium (III) hydroxide, immediately blowing oxygen or a gas containing oxygen into the suspension to obtain a sol comprising crystalline ceric oxide particles, and wet grinding the resulting sol. Sols are also prepared by calcining cerium carbonate at a temperature of 300 to 1100° C. to give cerium oxide particles, and wet-grinding the resulting particles.
摘要:
According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 .mu.m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce.sup.3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95.degree. C. and at an atmospheric pressure.
摘要翻译:根据本发明,提供了一种制备粒径为0.005至5μm的结晶氧化铈颗粒的方法,其包括以下步骤:使铈(III)盐与(OH)/( Ce 3+)摩尔比为3〜30,在惰性气体气氛中在水性介质中产生氢氧化铈(III)的悬浮液,并在10〜95℃的温度下向该悬浮液中吹入氧气或含氧气体, 在大气压下。
摘要:
There is provided an abrasive used for polishing a substrate which comprises silica as a main component, for example a rock crystal, a quartz glass for photomask, for CMP of an organic film, Inter Layer Dielectric (ILD) and shallow trench isolation of a semiconductor device, or for polishing a hard disk made of glass. A sol which particles are dispersed in a medium, wherein the particles have a particle size of 0.005 to 1 μm and comprise as a main component crystalline cerium oxide of the cubic system and as an additional component a lanthanum compound, a neodymium compound or a combination thereof, wherein the additional component is contained in X/(Ce+X) molar ratio of 0.001 to 0.5 in which X is lanthanum atoms, neodymium atoms or a combination thereof. The sol is prepared by reacting an aqueous solution which a cerium (III) salt is mixed with a lanthanum (III) salt and/or a neodymium (III) salt, with an alkaline substance to give a suspension in which cerium (III) hydroxide is homogeneously mixed with lanthanum (III) hydroxide and/or neodymium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension.
摘要:
According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 &mgr;m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95° C. and at an atmospheric pressure.
摘要:
The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.
摘要:
The present invention is to provide a process for preparing ceric oxide particles used as an abrasive or polishing material for producing semiconductors or as a UV ray-absorbing material for plastics, glass and the like.The present invention relates to a process for preparing cerium (IV) oxide particles having a particle size of from 0.03 .mu.m to 5 .mu.m, which comprises adjusting an aqueous medium containing cerium (IV) hydroxide and a nitrate to a pH of from 8 to 11 with an alkaline substance and heating the aqueous medium at a temperature of from 100.degree. to 200.degree. C. under pressure.
摘要:
For aluminum disks and glass-made hard disks, those disks having a mean waviness of less than 3 Å are being desired in order to increase the density of memory capacity. The present invention provides polishing compositions that can give smoothly polished surfaces for the disks. The polishing compositions are polishing compositions for aluminum disks or substrates having silica on the surface thereof, which contain colloidal silica particle groups having different particle size distributions and have a SiO2 concentration of 0.5 to 50% by weight.
摘要:
A method of milling cerium compound by means of a ball mill using a milling medium, characterized in that ratio Hb/r of radius r of a cylindrical ball mill container and depth Hb of the milling medium in the ball mill container disposed horizontally ranges from 1.2 to 1.9, and the ball mill container is rotated at a rotational speed which is 50% or less of critical rotational speed Nc=299/r1/2 of the ball mill container converted from the radius r expressed in centimeter. The milling method can be carried out in a wet or dry process, and the cerium compound is preferably cerium oxide. The method can be also applied for producing a cerium compound slurry.
摘要翻译:一种通过使用研磨介质的球磨机研磨铈化合物的方法,其特征在于,圆柱形球磨机容器的半径r与深度H b b的比值H b / 水平设置的球磨机容器中的研磨介质的SUB> 1.2〜1.9,球磨容器以临界旋转速度N C = 50%以下的转速旋转, 从以半径r表示的半径r转换的球磨机容器的299 / r 1/2倍。 研磨方法可以在湿法或干法中进行,铈化合物优选为氧化铈。 该方法也可用于制备铈化合物浆料。