公开(公告)号：US08906708B2

公开(公告)日：2014-12-09

申请号：US13638792

申请日：2011-03-28

Applicant: Isao Yokokawa

Inventor： Isao Yokokawa

IPC: H01L21/66 ,  H01L21/265 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3005 ,  H01J37/3171 ,  H01J2237/2445 ,  H01J2237/31703 ,  H01L22/12

Abstract: A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation.

Abstract translation: 一种表面上具有绝缘膜的半导体晶片的整个表面上离子注入离子注入条件的方法，该方法包括检查离子是否被注入到半导体的整个表面上 晶片通过直接或间接观察在半导体晶片的一个表面在离子注入期间被注入的离子的离子束照射时发出的光。

公开(公告)号：US20140097523A1

公开(公告)日：2014-04-10

申请号：US14114959

申请日：2012-04-25

Applicant: Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

Inventor： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC: H01L21/762 ,  H01L29/02 ,  H01L21/265

CPC classification number: H01L29/02 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76254 ,  Y10S438/977

Abstract: A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.

Abstract translation: 制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个 在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

公开(公告)号：US20130023069A1

公开(公告)日：2013-01-24

申请号：US13638792

申请日：2011-03-28

Applicant: Isao Yokokawa

Inventor： Isao Yokokawa

IPC: H01L21/66

CPC classification number: H01L21/265 ,  H01J37/3005 ,  H01J37/3171 ,  H01J2237/2445 ,  H01J2237/31703 ,  H01L22/12

Abstract: A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation.

Abstract translation: 一种表面上具有绝缘膜的半导体晶片的整个表面上离子注入离子注入条件的方法，该方法包括检查离子是否被注入到半导体的整个表面上 晶片通过直接或间接观察在半导体晶片的一个表面在离子注入期间被注入的离子的离子束照射时发出的光。

公开(公告)号：US07959731B2

公开(公告)日：2011-06-14

申请号：US11665977

申请日：2005-11-02

Applicant: Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

Inventor： Isao Yokokawa ,  Hiroji Aga ,  Kiyoshi Mitani

IPC: C30B25/22

CPC classification number: H01L21/26506 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/76254 ,  Y10S117/915

Abstract: A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0

Abstract translation: 一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

公开(公告)号：US20100112824A1

公开(公告)日：2010-05-06

申请号：US12450955

申请日：2008-04-25

Applicant: Isao Yokokawa ,  Nobuhiko Noto ,  Shin-ichi Yamaguchi

Inventor： Isao Yokokawa ,  Nobuhiko Noto ,  Shin-ichi Yamaguchi

IPC: H01L21/316

CPC classification number: H01L21/324 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/7624

Abstract: The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat treatment is additionally performed (a process (B)) in a non-oxidizing atmosphere at a temperature higher than the temperature at which the thermal oxidation treatment was performed, whereby a silicon oxide film is formed on the front surface of an SOI layer. This provides a method for forming a silicon oxide film of an SOI wafer, the method that can prevent an SOI wafer from being warped after thermal oxidation treatment even when an SOI wafer having a thick oxide film on the back surface is used and a silicon oxide film for forming a device is formed by thermal oxidation on the front surface on the SOI layer side, and can reduce exposure failure and adsorption failure caused by warpage of the SOI wafer and enhance yields of device fabrication.

Abstract translation: 本发明是一种用于形成SOI晶片的氧化硅膜的方法，至少在后表面具有氧化膜的SOI晶片上进行热氧化处理的方法（工艺（A）），在 在非氧化性气氛中，在高于进行热氧化处理的温度的温度下，另外进行热处理（工序（B）），在氧化膜的表面上形成氧化硅膜 SOI层。 这提供了一种用于形成SOI晶片的氧化硅膜的方法，即使在使用背面具有厚氧化膜的SOI晶片和氧化硅后，也可以防止SOI晶片在热氧化处理后翘曲的方法 用于形成器件的膜通过在SOI层侧的前表面上的热氧化形成，并且可以减少由SOI晶片的翘曲引起的暴露失效和吸附失效，并提高器件制造的产量。

公开(公告)号：US20100112781A1

公开(公告)日：2010-05-06

申请号：US12450960

申请日：2008-04-16

Applicant: Isao Yokokawa ,  Hiroshi Takeno ,  Nobuhiko Noto

Inventor： Isao Yokokawa ,  Hiroshi Takeno ,  Nobuhiko Noto

IPC: H01L21/762

CPC classification number: H01L21/76256

Abstract: The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p+ silicon single crystal wafer and a bond wafer consisting of a silicon single crystal wafer containing a dopant at a lower concentration than that in the base wafer; a step of forming a silicon oxide film on an entire surface of the base wafer based on thermal oxidation; a step of bonding the bond wafer to the base wafer through the silicon oxide film; and a step of reducing a thickness of the bond wafer to form an SOI layer, wherein a step of forming a CVD insulator film on a surface on an opposite side of a bonding surface of the base wafer is provided before the thermal oxidation step for the base wafer. As a result, it is possible to provide the method for manufacturing an SOI wafer which can easily prevent the p-type dopant contained in the base wafer from outwardly diffusing from the surface on the opposite side of the bonding surface of the base wafer due to a high-temperature heat treatment, suppress this dopant from being mixed into the SOI layer, and reduce warpage.

Abstract translation: 本发明提供一种制造SOI晶片的方法，包括：准备由p +硅单晶晶片构成的基底晶片和由含有掺杂剂的硅单晶晶片组成的接合晶片的步骤，其浓度低于 基片; 基于热氧化在基底晶片的整个表面上形成氧化硅膜的步骤; 通过氧化硅膜将接合晶片接合到基底晶片的步骤; 以及减小接合晶片的厚度以形成SOI层的步骤，其中在所述基底晶片的接合表面的相反侧的表面上形成CVD绝缘膜的步骤在所述基底晶片的接合表面的热氧化步骤之前提供 基片。 结果，可以提供一种制造SOI晶片的方法，其可以容易地防止基底晶片中包含的p型掺杂物从基底晶片的接合表面的相对侧上的表面向外扩散，这是由于 进行高温热处理，可以抑制该掺杂剂混入SOI层，从而降低翘曲。

公开(公告)号：US20070287269A1

公开(公告)日：2007-12-13

申请号：US11665362

申请日：2005-10-14

Applicant: Isao Yokokawa ,  Nobuhiko Noto

Inventor： Isao Yokokawa ,  Nobuhiko Noto

IPC: H01L21/20

CPC classification number: H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: The present invention is a method for producing a semiconductor wafer, comprising at least steps of: epitaxially growing a SiGe layer on a surface of a silicon single crystal wafer that is to be a bond wafer; implanting at least one kind of hydrogen ion and rare gas ion through the SiGe layer, so that an ion implanted layer is formed inside the bond wafer; closely contacting and bonding a surface of the SiGe layer and a surface of a base wafer through an insulator film; then performing delamination at the ion implanted layer, removing a Si layer in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer is exposed; and then subjecting the exposed SiGe layer to a heat treatment for enriching Ge under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere. Thereby, a method for producing a semiconductor wafer having a SiGe layer in which lattice relaxation is sufficiently performed and of which surface roughness is suppressed and of which crystallinity is good is provided.

Abstract translation: 本发明是一种制造半导体晶片的方法，至少包括以下步骤：在作为接合晶片的硅单晶晶片的表面上外延生长SiGe层; 通过SiGe层注入至少一种氢离子和稀有气体离子，从而在接合晶片的内部形成离子注入层; 通过绝缘膜紧密接触和接合SiGe层的表面和基底晶片的表面; 然后在离子注入层进行分层，通过分层去除转移到基底晶片一侧的分层中的Si层，使得SiGe层露出; 然后对暴露的SiGe层进行热处理，以在氧化气氛下进行Ge的富集和/或热处理，以在非氧化气氛下缓和晶格应变。 因此，提供一种具有SiGe层的半导体晶片的制造方法，其中充分进行晶格弛豫并且抑制表面粗糙度并且结晶度良好的SiGe层。

公开(公告)号：US08728912B2

公开(公告)日：2014-05-20

申请号：US13990883

申请日：2011-11-18

Applicant: Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

Inventor： Hiroji Aga ,  Isao Yokokawa ,  Satoshi Oka

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/31111 ,  H01L21/76254

Abstract: The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.

Abstract translation: 本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法 并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。 结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤， 通过离子注入分层方法制造的SOI晶片。

公开(公告)号：US20110281420A1

公开(公告)日：2011-11-17

申请号：US13145275

申请日：2010-01-08

Applicant: Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

Inventor： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC: H01L21/301

CPC classification number: H01L21/76254 ,  H01L21/30608 ,  H01L21/31111

Abstract: A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.

Abstract translation: 一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。 该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜 位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

公开(公告)号：US20070023066A1

公开(公告)日：2007-02-01

申请号：US10570949

申请日：2004-09-07

Applicant: Isao Yokokawa ,  Kiyoshi Mitani

Inventor： Isao Yokokawa ,  Kiyoshi Mitani

IPC: B08B6/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: H01L21/02052 ,  H01L21/76254

Abstract: The present invention is a method for cleaning a multilayer substrate, comprising steps of forming a protective film on a surface of the SiGe layer of an outermost surface layer in the multilayer substrate and then cleaning the protective film with a cleaning liquid capable of etching the protective film so that the protective film remains, a method for bonding substrates, wherein an outermost surface layer of the multilayer substrate cleaned by the cleaning method and a surface of another substrate are bonded, and a method for producing a bonded wafer, comprising steps of, forming a Si1-XGex layer and a protective layer on a surface of a Si single crystal bond wafer in order, performing ion implantation through the protective layer thereby to form an ion implanted layer, cleaning the bond wafer, superposing closely a surface of the protective layer and a base wafer, then performing delamination at the ion implanted layer, forming a thermal oxide film on a surface of the delaminated layer transferred to the base wafer side by the delamination, removing the thermal oxide film to expose a condensation SiGe layer, and performing epitaxial growth of a Si single crystal layer on the surface. Thereby, there is provided a cleaning method and a bonding method for preventing a SiGe layer of an outermost surface layer in a multilayer substrate from being roughening of the surface, and a method for producing a bonded wafer for preventing bonding defects along with ion implantation.

Abstract translation: 本发明是一种清洗多层基板的方法，包括以下步骤：在多层基板中的最表面层的SiGe层的表面上形成保护膜，然后用能够蚀刻保护膜的清洗液清洗保护膜 膜，使保护膜残留，接合基板的方法，其中通过清洁方法清洁的多层基板的最外表面层和另一基板的表面被接合，以及制造接合晶片的方法，包括以下步骤： 在Si单晶接合晶片的表面上形成Si 1-x N x Ge x Si层和保护层，以便通过保护层进行离子注入从而形成 离子注入层，清洁接合晶片，紧密地叠加保护层的表面和基底晶片，然后在离子注入层进行分层，在表面上形成热氧化膜 通过分层转移到基底晶片侧的剥离层，去除热氧化膜以暴露冷凝SiGe层，并且在表面上执行Si单晶层的外延生长。 因此，提供了一种用于防止多层基板中的最外表面层的SiGe层被粗糙化的清洁方法和接合方法，以及用于防止接合缺陷以及离子注入的接合晶片的制造方法。