利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.022 秒)

    Process for the preparation of 4,6-dien-3-one steroids
    3.
    发明授权
    Process for the preparation of 4,6-dien-3-one steroids 失效
    制备4,6-二烯-3-酮类固醇的方法

    公开(公告)号：US4311646A

    公开(公告)日：1982-01-19

    申请号：US190223

    申请日：1980-09-24

    申请人： Issei Nitta ,  Toshio Haruyama ,  Shinya Inoue

    发明人： Issei Nitta ,  Toshio Haruyama ,  Shinya Inoue

    IPC分类号： C07J7/00 ,  C07J21/00 ,  C07J51/00 ,  C07J75/00

    CPC分类号： C07J7/0045

    摘要： A 4,6-dien-3-one steroid is produced by brominating an enolic ether of a 4-en-3-one steroid in a water-containing organic solvent which is substantially free from acetic acid and sodium acetate to give a 6-bromosteroid and then dehydrobrominating the 6-bromosteroid in a medium which contains dimethylformamide or N-methylpyrrolidone and 1 to 9% by volume of water.

    摘要翻译： 通过在基本上不含乙酸和乙酸钠的含水有机溶剂中溴化4-烯-3-酮类固醇的烯醇醚，得到6-二烯-3-酮类固醇，得到6- 然后在含有二甲基甲酰胺或N-甲基吡咯烷酮和1至9％（体积）水的培养基中将6-溴甾类化合物脱溴。

    Phenylpiperazine derivatives and their acid addition salts
    4.
    发明授权
    Phenylpiperazine derivatives and their acid addition salts 失效
    苯基哌嗪衍生物及其酸加成盐

    公开(公告)号：US4716161A

    公开(公告)日：1987-12-29

    申请号：US719456

    申请日：1985-04-03

    申请人： Harukazu Fukami ,  Ryoji Kikumoto ,  Kenichiro Nakao ,  Issei Nitta ,  Shinya Inoue

    发明人： Harukazu Fukami ,  Ryoji Kikumoto ,  Kenichiro Nakao ,  Issei Nitta ,  Shinya Inoue

    IPC分类号： C07D239/96 ,  C07D285/32 ,  C07D491/04 ,  C07D491/056 ,  C07D513/04 ,  A61K31/54 ,  C07D417/06

    CPC分类号： C07D491/04 ,  C07D239/96 ,  C07D285/32 ,  C07D513/04

    摘要： A phenylpiperazine derivative according to the present invention has the following general formula [I]: ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are independently hydrogen or alkoxy group having 1 to 3 carbon atoms, orR.sup.1 and R.sup.2 or R.sup.2 and R.sup.3 together with carbon atoms to which they are attached form --O(CH.sub.2).sub.m O-- wherein m is an integer of 1 to 3, oreither R.sup.1 or R.sup.2 is amine residue selected from the group consisting of --NH.sub.2 , --NHSO.sub.2 CH.sub.3, --NHCOCH.sub.3 and --NHCONH.sub.2 and the other is hydrogen or alkoxy group of 1 to 3 carbon atoms and R.sup.3 is hydrogen;R.sup.4 and R.sup.5 are independently hydrogen or alkyl group of 1 to 3 carbon atoms;Y is --CO-- or --SO.sub.2 -- provided that at least one of R.sup.1 and R.sup.2 is not hydrogen when Y is --CO--; andn is an integer of 2 to 4.An acid addition salt of the phenylpiperazine derivative having the general formula [I] is included in the present invention. The phenylpiperazine derivative as well as its acid addition salt according to the present invention have the ability to reduce the blood pressure.

    摘要翻译： 根据本发明的苯基哌嗪衍生物具有以下通式[I]：其中R 1，R 2和R 3独立地是氢或具有1至3个碳原子的烷氧基，或者R 1和R 2或R 2和R 3 与其连接的碳原子一起形成-O（CH 2）m O-，其中m是1至3的整数，或者R 1或R 2是选自-NH 2，-NHSO 2 CH 3，-NHCOCH 3和 -NHCONH 2，另一个是1或3个碳原子的氢或烷氧基，R 3是氢; R4和R5独立地是氢或1〜3个碳原子的烷基; Y是-CO-或-SO 2 - ，条件是当Y是-CO-时，R 1和R 2中的至少一个不是氢; n为2〜4的整数。本发明包括具有通式[I]的苯基哌嗪衍生物的酸加成盐。 根据本发明的苯基哌嗪衍生物及其酸加成盐具有降低血压的能力。

    Piperazine derivatives and their acid addition salts
    5.
    发明授权
    Piperazine derivatives and their acid addition salts 失效
    哌嗪衍生物及其酸加成盐

    公开(公告)号：US4613598A

    公开(公告)日：1986-09-23

    申请号：US708641

    申请日：1985-03-06

    申请人： Harukazu Fukami ,  Shinya Inoue ,  Issei Nitta ,  Kenichiro Nakao ,  Ryoji Kikumoto

    发明人： Harukazu Fukami ,  Shinya Inoue ,  Issei Nitta ,  Kenichiro Nakao ,  Ryoji Kikumoto

    IPC分类号： C07D213/74 ,  C07D265/36 ,  C07D267/14 ,  C07D279/16 ,  C07D295/084 ,  C07D295/108 ,  C07D417/12 ,  A61K31/55 ,  C07D417/10

    CPC分类号： C07D295/108 ,  C07D213/74 ,  C07D265/36 ,  C07D267/14 ,  C07D279/16 ,  C07D295/092 ,  C07D417/12

    摘要： A piperazine derivative according to the present invention has the following general formula [I]: ##STR1## wherein R.sup.1 is --OH, --OR.sup.3, --SR.sup.3, --SOR.sup.3 or --SO.sub.2 R.sup.3 wherein R.sup.3 is alkyl group having 1 to 3 carbon atoms;R.sup.2 is --SO.sub.2 NH.sub.2, --SO.sub.2 NHR.sup.4, --SO.sub.2 NR.sup.4 R.sup.5, --COOH, --COOR.sup.4, --CONH.sub.2, --CONHR.sup.4, --CONR.sup.4 R.sup.5, --NHCONH.sub.2, --NHCSNH.sub.2, --NHCONHR.sup.4, --NHCOR.sup.4 or --NHSO.sub.2 R.sup.4 wherein R.sup.4 and R.sup.5 are independently alkyl group having 1 to 3 carbon atoms; orR.sup.1 and R.sup.2 together with carbon atoms to which they are attached form ##STR2## Z is --CO-- or --CH(OH)--; Ar is pyridyl or substituted or unsubstituted phenyl; andn is an integer of 3 to 5.An acid addition salt of the piperazine derivative having the above formula [I] is included in the present invention. The piperazine derivative as well as its acid addition salt according to the present invention have the ability to reduce the blood pressure.

    摘要翻译： 根据本发明的哌嗪衍生物具有以下通式[I]：其中R 1是-OH，-OR 3，-SR 3，-SOR 3或-SO 2 R 3，其中R 3是具有1至3个碳原子的烷基 原子 R2是-SO2NH2，-SO2NHR4，-SO2NR4R5，-COOH，-COOR4，-CONH2，-CONHR4，-CONR4R5，-NHCONH2，-NHCSNH2，-NHCONHR4，-NHCOR4或-NHSO2R4，其中R4和R5独立地为具有1 至3个碳原子; 或R 1和R 2与它们所连接的碳原子一起形成Z是-CO-或-CH（OH） - ; Ar为吡啶基或取代或未取代的苯基; n为3〜5的整数。上述式[I]的哌嗪衍生物的酸加成盐包括在本发明中。 根据本发明的哌嗪衍生物及其酸加成盐具有降低血压的能力。

    Front vehicle body structure
    6.
    发明授权
    Front vehicle body structure 有权
    前车身结构

    公开(公告)号：US08789874B2

    公开(公告)日：2014-07-29

    申请号：US13431040

    申请日：2012-03-27

    申请人： Jyunya Okamura ,  Takehisa Tsukada ,  Kouichi Imamura ,  Takatomo Watamori ,  Shinya Inoue

    发明人： Jyunya Okamura ,  Takehisa Tsukada ,  Kouichi Imamura ,  Takatomo Watamori ,  Shinya Inoue

    IPC分类号： B62D25/08 ,  B60R19/34

    CPC分类号： B62D25/082 ,  B60K11/04 ,  B60R19/12 ,  B60R19/34 ,  B62D21/152

    摘要： There is provided a front vehicle body structure. A radiator panel lower is mounted between front ends of side frames, crash boxes at the front ends of the side frames, and a bumper beam between front ends of the crash boxes. The radiator panel lower includes a bracket offset toward the inside in the vehicle width direction from the side frame. Upon an offset front collision, a shock load is absorbed by an axial compression deformation of one of the crash boxes and a drag of the side frames. Upon a full-overlap front collision, the right and left crash boxes are subjected to the axial compression deformation, and the shock load is input to the bracket, thereby bending the side frames. Accordingly, and a sufficient axial compression deformation of the crash boxes is secured, and the shock load is absorbed by the reduction in the drag of the side frames.

    摘要翻译： 提供前车身结构。 散热器面板下部安装在侧框架的前端之间，侧框架前端的碰撞盒以及碰撞箱前端之间的保险杠。 散热器面板下部包括从侧框架向车宽方向向内侧偏移的支架。 在偏移前方碰撞时，冲击载荷被碰撞盒中的一个的轴向压缩变形和侧框的拖动所吸收。 在完全重叠的前碰撞时，左右碰撞箱受到轴向压缩变形，并且冲击载荷被输入到支架，从而弯曲侧框架。 因此，确保了碰撞箱的足够的轴向压缩变形，并且通过减少侧框架的阻力来吸收冲击载荷。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08698236B2

    公开(公告)日：2014-04-15

    申请号：US13303850

    申请日：2011-11-23

    申请人： Yasuhiro Takeda ,  Shinya Inoue ,  Yuzo Otsuru

    发明人： Yasuhiro Takeda ,  Shinya Inoue ,  Yuzo Otsuru

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7816 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66689

    摘要： The invention provides an LDMOS transistor of which the time-dependent degrading of the performance due to the trapping of hot electrons in the gate insulation film is decreased. A body layer is disposed in a surface portion of an N−− type semiconductor layer. A source layer including an N− type layer is disposed in a surface portion of the body layer. An N− type drift layer is formed in a surface portion of the N−− type semiconductor layer. This drift layer includes a first region having a first N type impurity concentration peak region and a second region having a second N type impurity concentration peak region that is positioned deeper than the first N type impurity concentration peak region, the second region adjoining this first region. An N+ type drain layer is formed in a surface portion of the second region.

    摘要翻译： 本发明提供了一种LDMOS晶体管，其中由于在栅极绝缘膜中捕获热电子而导致的性能的时间依赖性降低。 体层设置在N-型半导体层的表面部分中。 包括N型层的源极层设置在主体层的表面部分中。 N-型漂移层形成在N-型半导体层的表面部分中。 该漂移层包括具有第一N型杂质浓度峰值区域的第一区域和位于比第一N型杂质浓度峰值区域更深的第二N型杂质浓度峰值区域的第二区域，与该第一区域相邻的第二区域 。 在第二区域的表面部分中形成N +型漏极层。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08692330B2

    公开(公告)日：2014-04-08

    申请号：US13529774

    申请日：2012-06-21

    申请人： Yuzo Otsuru ,  Yasuhiro Takeda ,  Shigeyuki Sugihara ,  Shinya Inoue

    发明人： Yuzo Otsuru ,  Yasuhiro Takeda ,  Shigeyuki Sugihara ,  Shinya Inoue

    IPC分类号： H01L23/60

    CPC分类号： H01L27/0277 ,  H01L21/823425 ,  H01L27/0207 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/7833

    摘要： A semiconductor device equally turns on the parasitic bipolar transistors in the finger portions of the finger form source and drain electrodes when a surge voltage is applied, even with the P+ type contact layer surrounding the N+ type source layers and the N+ type drain layers connected to the finger form source and drain electrodes. A P+ type contact layer surrounds N+ type source layers and N+ type drain layers. Metal silicide layers are formed on the N+ type source layers, the N+ type drain layers, and a portion of the P+ type contact layer. Finger form source electrodes, finger form drain electrodes, and a P+ type contact electrode surrounding these finger form electrodes are formed, being connected to the metal silicide layers respectively through contact holes formed in an interlayer insulation film deposited on the metal silicide layers.

    摘要翻译： 半导体器件即使在围绕N +型源极层的N +型漏极层和N +型漏极层连接的P +型接触层的同时，也在施加浪涌电压时同时导通手指形状的源极和漏极的手指部分中的寄生双极晶体管 手指形成源极和漏极。 P +型接触层包围N +型源极层和N +型漏极层。 金属硅化物层形成在N +型源极层，N +型漏极层和P +型接触层的一部分上。 形成手指形状的源电极，手指形状的漏电极和围绕这些指状电极的P +型接触电极，分别通过形成在沉积在金属硅化物层上的层间绝缘膜中的接触孔连接到金属硅化物层。

    Isoquinoline compound and pharmaceutical use thereof
    10.
    发明授权
    Isoquinoline compound and pharmaceutical use thereof 有权
    异喹啉化合物及其药物用途

    公开(公告)号：US07812178B2

    公开(公告)日：2010-10-12

    申请号：US12263963

    申请日：2008-11-03

    申请人： Masakazu Fujio ,  Hiroyuki Satoh ,  Shinya Inoue ,  Toshifumi Matsumoto ,  Yasuhiro Egi

    发明人： Masakazu Fujio ,  Hiroyuki Satoh ,  Shinya Inoue ,  Toshifumi Matsumoto ,  Yasuhiro Egi

    IPC分类号： C07D405/00 ,  C07D207/00 ,  C07D207/40

    CPC分类号： C07D401/04 ,  A61K31/4725 ,  C07D207/12 ,  C07D401/06 ,  C07D405/06

    摘要： The present invention relates to an isoquinoline compound represented by the following formula (I), an optically active form thereof, a pharmaceutically acceptable salt thereof, a water adduct thereof, a hydrate thereof and a solvate thereof, as well as an agent for the prophylaxis and/or treatment of a disease caused by hyperreactivity of poly(ADP-ribose)polymerase, containing the compound, and a poly(ADP-ribose)polymerase inhibitor containing the compound. In addition, this compound is useful as an agent for the prophylaxis and/or treatment of cerebral infarction, particularly as an agent for the prophylaxis and/or treatment of acute cerebral infarction. Furthermore, this compound is useful as a prophylactic and/or therapeutic agent that improves neurological symptoms associated with cerebral infarction, particularly acute cerebral infarction. wherein the symbols are the same as defined in the description.

    摘要翻译： 本发明涉及由下式（I）表示的异喹啉化合物，其光学活性形式，其药学上可接受的盐，其水加合物，其水合物和溶剂化物，以及预防药物 和/或治疗由含有该化合物的聚（ADP-核糖）聚合酶和含该化合物的聚（ADP-核糖）聚合酶抑制剂）的高反应性引起的疾病。 此外，该化合物可用作预防和/或治疗脑梗塞的药剂，特别是作为预防和/或治疗急性脑梗死的药物。 此外，该化合物可用作改善与脑梗死特别是急性脑梗死相关的神经症状的预防和/或治疗剂。 其中符号与描述中定义的相同。