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    FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS
    2.
    发明申请
    FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS 审中-公开
    前端等离子体介质喷砂处理和装置

    公开(公告)号：US20100130017A1

    公开(公告)日：2010-05-27

    申请号：US12275394

    申请日：2008-11-21

    申请人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

    发明人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

    摘要： Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程的前端（FEOL）通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含 活性氮和活性氧，其大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    PLASMA MEDIATED ASHING PROCESSES
    3.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号：US20110226280A1

    公开(公告)日：2011-09-22

    申请号：US13117488

    申请日：2011-05-27

    申请人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

    发明人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

    IPC分类号： B08B7/00 ,  B08B13/00 ,  C23F1/08

    CPC分类号： H01L21/02101 ,  G03F7/427 ,  H01L21/31138

    摘要： A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

    摘要翻译： 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

    Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics
    6.
    发明授权
    Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics 失效
    用于形成多孔低k电介质的紫外辅助致孔剂去除和/或固化方法

    公开(公告)号：US07629272B2

    公开(公告)日：2009-12-08

    申请号：US11146742

    申请日：2005-06-07

    申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

    发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

    IPC分类号： H01L21/31

    CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

    摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

    摘要翻译： 从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。 在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。 在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。 然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

    Apparatus and process for treating dielectric materials
    7.
    发明申请
    Apparatus and process for treating dielectric materials 失效
    用于处理电介质材料的设备和工艺

    公开(公告)号：US20060141806A1

    公开(公告)日：2006-06-29

    申请号：US11155525

    申请日：2005-06-17

    申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L21/26

    CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

    摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

    摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。