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    Superconducting structure with layers of niobium nitride and aluminum nitride
    2.
    发明授权
    Superconducting structure with layers of niobium nitride and aluminum nitride 失效
    具有氮化铌和氮化铝层的超导结构

    公开(公告)号：US4844989A

    公开(公告)日：1989-07-04

    申请号：US27928

    申请日：1987-03-19

    申请人： James M. Murduck ,  Yves J. Lepetre ,  Ivan K. Schuller ,  John B. Ketterson

    发明人： James M. Murduck ,  Yves J. Lepetre ,  Ivan K. Schuller ,  John B. Ketterson

    IPC分类号： B32B18/00 ,  H01L39/12 ,  H01L39/22

    CPC分类号： H01L39/125 ,  H01L39/223

    摘要： A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

    摘要翻译： 通过在衬底上沉积氮化铝和氮化铌的交替层来形成超导结构。 沉积方法包括直流磁控管反应溅射，磁控管反应溅射，薄膜扩散，化学气相沉积和离子束沉积。 已经构建了具有20至350埃厚度的氮化铌和氮化铝层的结构。 已经将沉积厚度约为70埃的氮化铌薄膜和沉积厚度约为20埃的氮化铝实现了最佳结果。 由氮化铝单层分离的这种氮化铌膜可用于形成约瑟夫逊结。 当沉积在固定的基板或柔性条上以形成承载电流的体超导体时，氮化铌和氮化铝的30个或更多个交替层的结构是有用的。 它们也适用于电压控制的微波能量源。

    In-situ tunable Josephson weak links
    3.
    发明授权
    In-situ tunable Josephson weak links 失效
    原位可调约瑟夫逊薄弱环节

    公开(公告)号：US5432149A

    公开(公告)日：1995-07-11

    申请号：US225076

    申请日：1994-04-08

    申请人： Ivan K. Schuller ,  Gladys L. Nieva ,  Julio J. Guimpel ,  Eduardo Osquiguil ,  Yvan Bruynseraede

    发明人： Ivan K. Schuller ,  Gladys L. Nieva ,  Julio J. Guimpel ,  Eduardo Osquiguil ,  Yvan Bruynseraede

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702

    摘要： A weak link is patterned from a high-temperature superconducting film using standard lithographic techniques. Once the area in which the weak link is to be located is defined, the remainder of the film is covered with an oxygen-impermeable material. The oxygen is then removed in the weak link area by placing the sample in a vacuum furnace at a sufficient temperature to drive out the oxygen. Once the oxygen is removed, the weak link becomes non-superconducting. A high power solid state laser is placed in front of the weak link, and superconductivity is restored in the weak link area, in situ. The process is performed in a liquid nitrogen environment.

    摘要翻译： 使用标准光刻技术从高温超导膜图案化弱连接。 一旦定义了薄弱环节的区域，薄膜的其余部分被不透氧材料覆盖。 然后通过将样品置于真空炉中足够的温度以排出氧气，在弱连接区域中除去氧气。 一旦除氧，弱连接就变成非超导体。 高功率固体激光器放置在弱连接器的前面，原位在弱连接区域恢复超导性。 该过程在液氮环境中进行。

    Method of making coherent multilayer crystals
    6.
    发明授权
    Method of making coherent multilayer crystals 失效
    制作相干多层晶体的方法

    公开(公告)号：US4430183A

    公开(公告)日：1984-02-07

    申请号：US424702

    申请日：1982-09-27

    申请人： Ivan K. Schuller ,  Charles M. Falco

    发明人： Ivan K. Schuller ,  Charles M. Falco

    IPC分类号： C23C14/34 ,  C30B23/02 ,  H01L21/203 ,  C23C15/00

    CPC分类号： C23C14/3464 ,  C30B23/02 ,  C30B29/68 ,  Y10S505/729 ,  Y10S505/731

    摘要： A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

    摘要翻译： 一种由两个或更多个元件的相干多层晶体组成的新材料，其中每个层由单个元件组成。 每个层的厚度可以从大约2 ANGSTROM变化到2500 ANGSTROM。 通过溅射沉积在溅射原子在接触衬底之前将其溅射到接近衬底温度的条件下制备多层晶体。

    Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity
    8.
    发明授权
    Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity 失效
    用作具有低电阻温度系数的电阻器的分层超薄相干结构

    公开(公告)号：US4454495A

    公开(公告)日：1984-06-12

    申请号：US413637

    申请日：1982-08-31

    申请人： Thomas R. Werner ,  Charles M. Falco ,  Ivan K. Schuller

    发明人： Thomas R. Werner ,  Charles M. Falco ,  Ivan K. Schuller

    IPC分类号： H01C7/00 ,  H01C7/18 ,  H01C10/00

    CPC分类号： H01C7/18 ,  H01C7/008 ,  Y10S505/881

    摘要： A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

    摘要翻译： 具有控制的电阻温度系数（TCR）的薄膜电阻器，其范围从负开尔文到正开尔文并且具有相对高的电阻率。 该电阻器是含有两个不同金属的多个交替的超薄层的多层超晶格晶体。 通过控制各层的厚度来改变TCR。 电阻器可以通过与薄膜电路制造技术相兼容的方法容易地制备。

    Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits
    9.
    发明授权
    Method for etching thin films of niobium and niobium-containing compounds for preparing superconductive circuits 失效
    用于蚀刻用于制备超导电路的铌和铌化合物的薄膜的方法

    公开(公告)号：US4266008A

    公开(公告)日：1981-05-05

    申请号：US96859

    申请日：1979-11-23

    申请人： Robert T. Kampwirth ,  Ivan K. Schuller ,  Charles M. Falco

    发明人： Robert T. Kampwirth ,  Ivan K. Schuller ,  Charles M. Falco

    IPC分类号： C23F1/26 ,  H01L39/24 ,  H01L39/02

    CPC分类号： C23F1/26 ,  H01L39/2406

    摘要： An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate, and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

    摘要翻译： 一种制备铌或铌化合物的薄膜超导电路的改进方法，其中将铌或铌化合物的薄膜施加到非导电基材上并覆盖感光材料层。 敏感材料又被暴露和显影的电路图案覆盖，以在膜的表面上形成光致抗蚀剂材料中的电路的掩模。 通过使基底与硝酸，硫酸和氟化氢的水性蚀刻溶液接触来除去未掩蔽的过量的铌膜，其将快速蚀刻铌化合物而不会使光致抗蚀剂下蚀。 蚀刻溶液的改进将允许薄膜从衬底提升而不进一步蚀刻。