Plasma curing process for porous silica thin film
    1.
    发明授权
    Plasma curing process for porous silica thin film 失效
    多孔二氧化硅薄膜等离子体固化工艺

    公开(公告)号:US06558755B2

    公开(公告)日:2003-05-06

    申请号:US09681332

    申请日:2001-03-19

    IPC分类号: C08J718

    摘要: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups and plasma curing the coating to convert the coating into porous silica. Plasma curing of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The costing is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350° C. The plasma cured coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the plasma cured porous network coating. The annealing temperature is typically loss than or about 475° C., and the annealing time is typically no more than or about 180 seconds. The annealed, plasma cured coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

    摘要翻译: 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂产生的多孔网络涂层和等离子体固化涂层以将涂层转化为多孔二氧化硅。 网络涂层的等离子体固化产生具有改进模量但具有较高介电常数的涂层。 成本计算在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化涂层可任选地退火。 与等离子体固化的多孔网络涂层相比,等离子体固化涂层的快速热处理(RTP)降低了涂层的介电常数,同时保持了改进的弹性模量。 退火温度通常为或约475℃以下,退火时间通常不超过或约180秒。 退火的等离子体固化涂层的介电常数范围为约1.1至约2.4,并具有改善的弹性模量。

    Mug
    4.
    外观设计
    Mug 有权

    公开(公告)号:USD962002S1

    公开(公告)日:2022-08-30

    申请号:US29808797

    申请日:2021-09-23

    申请人: Wei Chen

    设计人: Wei Chen

    Floor drain
    5.
    发明授权

    公开(公告)号:US11408163B2

    公开(公告)日:2022-08-09

    申请号:US16899621

    申请日:2020-06-12

    申请人: Wei Chen Hao Chen

    发明人: Wei Chen Hao Chen

    IPC分类号: E03F5/04

    摘要: A drain floor, including a drain base, a drain body including a cavity, a drain cup, a supporting frame; and a reset member. The drain cup includes a cup body, a stem, and a base. The cup body includes a through hole, and two ends of the stem are connected to the cup body and the base, respectively. The cup body is disposed in the cavity and the base is disposed out of the cavity. The space between the drain body and the drain cup forms an annular channel, and the annular channel communicates with the through hole. The annular channel includes a water inlet and a water outlet. The reset member is connected to the drain cup and is movable with respect to the drain cup to open and close the water outlet. The supporting frame connects the drain body and the reset member.

    Speaker Box
    10.
    发明申请
    Speaker Box 审中-公开

    公开(公告)号:US20180115821A1

    公开(公告)日:2018-04-26

    申请号:US15417194

    申请日:2017-01-26

    申请人: Wei Chen

    发明人: Wei Chen

    IPC分类号: H04R1/28 H04R1/02

    摘要: A speaker box is disclosed. The speaker box includes a housing having an accommodation space, a speaker unit accommodated in the accommodation space, a steel sheet injected in the housing and covering the opening; and a front cavity formed by the steel sheet, the diaphragm and the housing. The housing has an opening located above the diaphragm and an opening wall encircling the opening. The speaker unit includes a diaphragm having a moving element accommodated in the opening and a fixed part. The housing further includes an extension part formed and extending from the opening wall to the front cavity. The extension part combines with the injection of steel sheet, at least part of the extension is located on an upper side of the moving element and does not influence the normal vibration of the moving element.