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公开(公告)号：US5110404A
公开(公告)日：1992-05-05
申请号：US496750
申请日：1990-03-21
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Takao Abe
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Takao Abe
IPC分类号： C30B33/02 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B15/00 , C30B33/00 , H01L21/3225 , Y10S148/06 , Y10S148/071 , Y10S148/125
摘要： In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a predetermined oxygen precipitate can be obtained uniformly in the crystal growth direction without any reduction especially at the crystal bottom part. The resulting silicon is particularly suitable for manufacture of LSI.
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公开(公告)号：US4956153A
公开(公告)日：1990-09-11
申请号：US242414
申请日：1988-09-09
申请人： Hirotoshi Yamagishi , Izumi Fusegawa , Shuuji Yokota , Takao Abe
发明人： Hirotoshi Yamagishi , Izumi Fusegawa , Shuuji Yokota , Takao Abe
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/18 , H01L21/208
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： An improved apparatus for growing a single crystal of semiconductor silicon by the Czochralski method which apparatus has a heat-resistant and heat-insulating covering board in direct contact with the upper ends of heat-insulating members surrounding a quartz glass silicon melting crucible and having a circular center opening, and a heat-resistant and heat-insulating tube having an outer diameter approximately equal to the diameter of the center opening in the covering board gas-tightly joined to an upwardly extending argon gas supplying conduit and extending downwardly from the joint of the top wall of a metal housing and the upwardly extending conduit and extending through the center opening in the covering board in such a manner that the single crystal during growing is coaxially surrounded thereby, the lower end thereof being at a height above and in the proximity of the surface of the melt in the crucible. The wafers cut from the silicon single crystal grown in the apparatus are substantially free of defects such as OISFs after a thermal oxidation treatment.
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公开(公告)号：US5386796A
公开(公告)日：1995-02-07
申请号：US850916
申请日：1992-03-13
摘要： Quick and inexpensive determination of an aggregate of point defects in a grown silicon semiconductor single crystal bar is accomplished by a method which comprises cutting a wafer from a freshly grown silicon single crystal bar, etching the surface of this wafer with the mixture of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, treating the wafer with the mixture of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby giving rise to pits 2 and ripple patterns 1 therein, determining the density of the pits 2 and that of the ripple patterns 1, and rating the aggregate of point defects by virtue of the correlation between the densities of the pits 1 and the ripple patterns 1 and the aggregate of point defects.
摘要翻译： 在生长的硅半导体单晶棒中快速且廉价地测定点缺陷的集合是通过一种方法实现的，该方法包括从新生成的硅单晶棒切割晶片，用氢氟酸和 硝酸，从而减轻晶片的应变，用K2Cr2O7，氢氟酸和水的混合物处理晶片，从而在其中产生凹坑2和波纹图案1，确定凹坑2的密度和波纹图案1的密度， 并且通过凹坑1的密度与波纹图案1和点缺陷的总和之间的相关性对点缺陷的总和进行评级。
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公开(公告)号：US5340434A
公开(公告)日：1994-08-23
申请号：US11744
申请日：1993-02-01
摘要： A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.
摘要翻译： 公开了一种制造硅单晶的方法，其包括以下步骤：在坩埚中提供硅熔体，将硅多晶硅晶粒提供给硅熔体，并从硅熔体中提取硅单晶。 硅多晶体颗粒中的残留氢浓度大于10ppmwt且小于100ppmwt。 该方法防止硅单晶多晶。
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公开(公告)号：US5306387A
公开(公告)日：1994-04-26
申请号：US713848
申请日：1991-06-12
CPC分类号： C30B29/06 , C30B15/305
摘要： A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.
摘要翻译： 通过在施加磁场的情况下拉起保持在石英玻璃坩埚中的半导体熔体的方法，通过在保持在石英玻璃坩埚中的半导体熔体的方法来产生沿长度方向具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定所述 石英坩埚的水平超过5rpm，并根据所述单晶棒的拉伸长度改变施加到所述熔融半导体的所述磁场的强度。
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公开(公告)号：US5262338A
公开(公告)日：1993-11-16
申请号：US850506
申请日：1992-03-13
IPC分类号： H01L21/02 , H01L21/28 , H01L21/322 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.
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公开(公告)号：US5871583A
公开(公告)日：1999-02-16
申请号：US773351
申请日：1996-12-26
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.
摘要翻译： 用于生产通过切克劳斯基法生长的单晶硅的装置包括：主室，其具有将侧壁的上端和主室的颈部的下端相互连接的圆形的钢桶。 圆形肩部具有内表面，所述内表面被成形为形成围绕两个焦点的椭圆的周边的一部分，该两个焦点由加热器的上端和生长的硅单晶的纵向轴线的点组成。 内表面发射率低。 利用如此构造的装置，可以以高产率和生产率以稳定的方式制造具有高的氧化膜（SiO 2）的介电击穿强度的硅单晶。
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公开(公告)号：US5501172A
公开(公告)日：1996-03-26
申请号：US395837
申请日：1995-02-28
摘要： The present invention provides a method of growing silicon single crystals by the Czochralski method, wherein the strength of a neck may be increased so as to delete the risk of severance thereof in a simple and easy way without the use of mechanically complex devices and thereby growing of a single crystal of a larger diameter and heavy weight is made practically possible.The method comprises the steps of: a single crystal being so grown from a seed crystal that the diameter of said single crystal gets gradually narrower until the length of a seed taper reaches 2.5 to 15 times the sectional size of the seed crystal; the diameter of a long near-cylindrical neck following the seed taper being so regulated that said diameter may be 0.09 to 0.9 times the sectional size of the seed crystal and 2.5 mm as the smallest in diameter; the spread of the diameter fluctuation of the neck being so restricted as to be less than 1 mm; and the length of the neck being so controlled as to be kept within the range of 200 mm to 600 mm.
摘要翻译： 本发明提供了通过切克劳斯基法生长硅单晶的方法，其中可以增加颈部的强度，以便在不使用机械复杂的装置的情况下以简单和容易的方式删除其分离的风险，从而增长 的大直径和重量的单晶实际上是可能的。 该方法包括以下步骤：从晶种生长单晶，使得单晶的直径逐渐变窄，直到晶种锥的长度达到晶种的截面尺寸的2.5至15倍; 种子锥度之后的长的近圆柱形颈部的直径被调节，使得所述直径可以是晶种的截面尺寸的0.09至0.9倍，并且直径最小为2.5mm; 颈部的直径波动的扩展被限制为小于1mm; 并且颈部的长度被控制在200mm至600mm的范围内。
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公开(公告)号：US5688319A
公开(公告)日：1997-11-18
申请号：US796385
申请日：1991-11-22
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译： 通过从单晶棒切割晶片，对硅半导体单晶的氧化膜介电击穿电压进行评估，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片 然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜 通过利用鳞片状图案的密度与氧化膜介质击穿电压之间的相关性，介电击穿电压。 这一事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。
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公开(公告)号：US5248378A
公开(公告)日：1993-09-28
申请号：US852612
申请日：1992-03-17
申请人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.
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