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公开(公告)号：US5834322A
公开(公告)日：1998-11-10
申请号：US916291
申请日：1997-08-22
IPC分类号： C30B33/02 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/322
CPC分类号： C30B15/00 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3225
摘要： The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150.degree. C. to 1,280.degree. C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.
摘要翻译： 本发明的热处理方法，用于以不低于0.8mm /分钟的拉伸速度通过切克劳斯基法生长的Si单晶进行热处理，其特征在于在1150℃的温度下进行热处理。 从Si单晶切出的晶片，由此产生由于消除晶体缺陷而具有优异的氧化膜介电击穿电压特性的Si晶片。 因此，本发明能够高效率地制造LSI。
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公开(公告)号：US5534112A
公开(公告)日：1996-07-09
申请号：US238722
申请日：1994-05-05
IPC分类号： H01L21/66 , G01N27/92 , G01R31/26 , G01R31/28 , H01L21/306
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译： 通过从单晶棒切割晶片，对硅半导体单晶的氧化膜介电击穿电压进行评估，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片 然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片的表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜 通过利用鳞片状图案的密度与氧化膜介质击穿电压之间的相关性，介电击穿电压。 这一事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。
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公开(公告)号：US5688319A
公开(公告)日：1997-11-18
申请号：US796385
申请日：1991-11-22
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译： 通过从单晶棒切割晶片，对硅半导体单晶的氧化膜介电击穿电压进行评估，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片 然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜 通过利用鳞片状图案的密度与氧化膜介质击穿电压之间的相关性，介电击穿电压。 这一事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。
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公开(公告)号：US5248378A
公开(公告)日：1993-09-28
申请号：US852612
申请日：1992-03-17
申请人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Tetsuhiro Oda , Izumi Fusegawa , Hirotoshi Yamagishi , Atsushi Iwasaki , Akiho Maeda , Shinobu Takeyasu , Nobuyoshi Fujimaki , Yukio Karasawa
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.
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公开(公告)号：US5386796A
公开(公告)日：1995-02-07
申请号：US850916
申请日：1992-03-13
摘要： Quick and inexpensive determination of an aggregate of point defects in a grown silicon semiconductor single crystal bar is accomplished by a method which comprises cutting a wafer from a freshly grown silicon single crystal bar, etching the surface of this wafer with the mixture of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, treating the wafer with the mixture of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby giving rise to pits 2 and ripple patterns 1 therein, determining the density of the pits 2 and that of the ripple patterns 1, and rating the aggregate of point defects by virtue of the correlation between the densities of the pits 1 and the ripple patterns 1 and the aggregate of point defects.
摘要翻译： 在生长的硅半导体单晶棒中快速且廉价地测定点缺陷的集合是通过一种方法实现的，该方法包括从新生成的硅单晶棒切割晶片，用氢氟酸和 硝酸，从而减轻晶片的应变，用K2Cr2O7，氢氟酸和水的混合物处理晶片，从而在其中产生凹坑2和波纹图案1，确定凹坑2的密度和波纹图案1的密度， 并且通过凹坑1的密度与波纹图案1和点缺陷的总和之间的相关性对点缺陷的总和进行评级。
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公开(公告)号：US5262338A
公开(公告)日：1993-11-16
申请号：US850506
申请日：1992-03-13
IPC分类号： H01L21/02 , H01L21/28 , H01L21/322 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.
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公开(公告)号：US5720809A
公开(公告)日：1998-02-24
申请号：US510436
申请日：1995-08-02
CPC分类号： C30B15/02 , C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.
摘要翻译： 公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到 外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方 同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。 在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。 在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。 由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。
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公开(公告)号：US5373805A
公开(公告)日：1994-12-20
申请号：US961764
申请日：1992-10-15
CPC分类号： C30B15/00 , C30B15/14 , Y10T117/1032 , Y10T117/1056
摘要： A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.
摘要翻译： 一种基于切克劳斯基技术的单晶拉制装置，其具有用于向坩埚中连续供应颗粒状多晶材料的导管和悬浮在加热室中心的垂直吹扫管，其中，吹扫管是可垂直移动的; 隔热环连接到吹扫管的下端，并且由不含气泡的石英玻璃制成的圆柱形石英隔壁由隔热环垂直地保持，使得石英隔板环的下端 基本上低于吹扫管的下端，使得通过浸入多晶熔体中，分隔环将熔体的内表面与熔体的外表面隔开，在其后倾倒颗粒状多晶材料。
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公开(公告)号：US5110404A
公开(公告)日：1992-05-05
申请号：US496750
申请日：1990-03-21
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Takao Abe
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Takao Abe
IPC分类号： C30B33/02 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/322 , H01L21/324
CPC分类号： C30B29/06 , C30B15/00 , C30B33/00 , H01L21/3225 , Y10S148/06 , Y10S148/071 , Y10S148/125
摘要： In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a predetermined oxygen precipitate can be obtained uniformly in the crystal growth direction without any reduction especially at the crystal bottom part. The resulting silicon is particularly suitable for manufacture of LSI.
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公开(公告)号：US5871583A
公开(公告)日：1999-02-16
申请号：US773351
申请日：1996-12-26
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.
摘要翻译： 用于生产通过切克劳斯基法生长的单晶硅的装置包括：主室，其具有将侧壁的上端和主室的颈部的下端相互连接的圆形的钢桶。 圆形肩部具有内表面，所述内表面被成形为形成围绕两个焦点的椭圆的周边的一部分，该两个焦点由加热器的上端和生长的硅单晶的纵向轴线的点组成。 内表面发射率低。 利用如此构造的装置，可以以高产率和生产率以稳定的方式制造具有高的氧化膜（SiO 2）的介电击穿强度的硅单晶。
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