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1.发明授权Process for group 10 metal nanostructure synthesis and compositions made using same 有权第10组金属纳米结构合成方法和使用该组合物制备的组合物公开(公告)号：US08088483B1
公开(公告)日：2012-01-03
申请号：US11304498
申请日：2005-12-15
申请人： Jeffery A. Whiteford , Mihai A. Buretea , William P. Freeman , J. Wallace Parce , Baixin Qian , Erik C. Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , William P. Freeman , J. Wallace Parce , Baixin Qian , Erik C. Scher
IPC分类号： B32B5/66
CPC分类号： C07F5/025 , B82Y30/00 , B82Y40/00 , C07F15/0066 , Y10T428/2982 , Y10T428/2991 , Y10T428/2998
摘要： Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.
摘要翻译： 提供了生产第10族金属纳米结构的方法。 所述方法包括新型前体，新型表面活性剂或新型前体 - 表面活性剂组合。 还介绍了与方法相关的组合。
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2.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US07557028B1
公开(公告)日：2009-07-07
申请号：US11178257
申请日：2005-07-08
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L21/28
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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3.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US08884273B1
公开(公告)日：2014-11-11
申请号：US13268208
申请日：2011-10-07
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L51/00
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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4.发明授权Process for group III-V semiconductor nanostructure synthesis and compositions made using same 有权III-V族半导体纳米结构合成方法及使用该组合物制备的组合物公开(公告)号：US08062967B1
公开(公告)日：2011-11-22
申请号：US12475772
申请日：2009-06-01
申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
发明人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
IPC分类号： H01L21/3205
CPC分类号： C01B25/087 , B82Y30/00 , C01P2004/30 , C01P2004/54 , C01P2006/40 , C07F5/003 , C07F17/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/60 , Y10S977/773 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/932
摘要： Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
摘要翻译： 提供了生产纳米结构，特别是III-V族半导体纳米结构的方法。 该方法包括使用新的III族和/或V族前体，新的表面活性剂，氧化物受体，高温和/或稳定的共同产物。 还描述了相关组合物。 提供了可用作纳米结构合成前体的III族无机化合物的制备方法和组合物。 还描述了通过除去蒸气副产物从合成反应增加纳米结构的产率的方法。
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公开(公告)号：US20090121190A1
公开(公告)日：2009-05-14
申请号：US12039018
申请日：2008-02-28
申请人： J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
发明人： J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C08K3/30 , C09D5/00 , C09D7/61 , C09D7/67 , C09D11/037 , C09K11/565 , C09K11/883 , G02B1/11 , G02B3/00 , G02B3/0006 , G02B5/08 , H01L33/502 , H01L33/504 , H01L33/56 , H05B33/145 , Y10S977/715 , Y10S977/753 , Y10S977/834 , Y10T428/23 , Y10T428/239
摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.
摘要翻译： 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了用于生产包含半导体纳米晶体的基质的方法。
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公开(公告)号：US08749130B2
公开(公告)日：2014-06-10
申请号：US12039018
申请日：2008-02-28
申请人： J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
发明人： J. Wallace Parce , Jian Chen , Robert S. Dubrow , William P. Freeman , Erik C. Scher , Jeffery A. Whiteford
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C08K3/30 , C09D5/00 , C09D7/61 , C09D7/67 , C09D11/037 , C09K11/565 , C09K11/883 , G02B1/11 , G02B3/00 , G02B3/0006 , G02B5/08 , H01L33/502 , H01L33/504 , H01L33/56 , H05B33/145 , Y10S977/715 , Y10S977/753 , Y10S977/834 , Y10T428/23 , Y10T428/239
摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.
摘要翻译： 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了用于生产包含半导体纳米晶体的基质的方法。
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7.发明授权公开(公告)号：US07438833B2
公开(公告)日：2008-10-21
申请号：US11130303
申请日：2005-05-16
IPC分类号： C08G61/00 , C07C13/28 , C07D497/12 , H01B1/12 , H05B33/00
CPC分类号： G01N33/588 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01B1/128 , H01G9/2031 , H01G9/2059 , H01L51/0068 , H01L51/4226 , Y02E10/549 , Y02P70/521
摘要： The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.
摘要翻译： 本发明提供可用于改变纳米晶体表面或含纳米晶体的基质内的电荷传输的组合物（小分子，低聚物和聚合物），以及制备和使用新型组合物的方法。
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公开(公告)号：US07794600B1
公开(公告)日：2010-09-14
申请号：US11212488
申请日：2005-08-25
IPC分类号： B01D15/08
CPC分类号： B01D15/08 , B01D15/163 , B01D15/325 , B01D15/34 , B01D15/361 , B82Y30/00 , B82Y40/00 , Y10S977/81 , Y10S977/84
摘要： The present invention relates to a method of processing nanocrystals. The method comprises providing a mixture comprising nanocrystals, contaminants and a first solvent in which the nanocrystals are soluble, and using chromatography to reduce the amount of contaminants in the mixture. The method optionally comprises isolating the nanocrystals after chromatography. The method allows for the production of nanocrystal compositions having a total amount of surfactant associated therewith, the amount of surfactant comprising an amount of bound surfactant and an amount of free surfactant in the solvent, the amount of free surfactant being less than about 1% of the total amount of surfactant in the solvent. The present invention, accordingly, also relates to such compositions and corresponding composites of nanocrystals in organic polymer matrices.
摘要翻译： 本发明涉及一种处理纳米晶体的方法。 该方法包括提供包含纳米晶体，污染物和其中纳米晶体可溶的第一溶剂的混合物，并且使用色谱法来减少混合物中的污染物的量。 该方法任选地包括在色谱法之后分离纳米晶体。 该方法允许制备具有与其相关的总量的表面活性剂的纳米晶体组合物，包含一定量的结合表面活性剂的表面活性剂的量和溶剂中游离表面活性剂的量，游离表面活性剂的量小于 溶剂中表面活性剂的总量。 因此，本发明也涉及这样的组合物和相关的纳米晶体在有机聚合物基质中的复合物。
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9.发明申请公开(公告)号：US20090050854A1
公开(公告)日：2009-02-26
申请号：US12206935
申请日：2008-09-09
IPC分类号： H01B1/12
CPC分类号： G01N33/588 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01B1/128 , H01G9/2031 , H01G9/2059 , H01L51/0068 , H01L51/4226 , Y02E10/549 , Y02P70/521
摘要： The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.
摘要翻译： 本发明提供可用于改变纳米晶体表面或含纳米晶体的基质内的电荷传输的组合物（小分子，低聚物和聚合物），以及制备和使用新型组合物的方法。
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10.发明授权公开(公告)号：US07943064B2
公开(公告)日：2011-05-17
申请号：US12206935
申请日：2008-09-09
CPC分类号： G01N33/588 , B82Y10/00 , B82Y15/00 , B82Y30/00 , H01B1/128 , H01G9/2031 , H01G9/2059 , H01L51/0068 , H01L51/4226 , Y02E10/549 , Y02P70/521
摘要： The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.
摘要翻译： 本发明提供可用于改变纳米晶体表面或含纳米晶体的基质内的电荷传输的组合物（小分子，低聚物和聚合物），以及制备和使用新型组合物的方法。
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