COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN

    公开(公告)号:US20230041656A1

    公开(公告)日:2023-02-09

    申请号:US17942332

    申请日:2022-09-12

    Abstract: A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R2 represents a substituted or unsubstituted monovalent hydrocarbon group. R3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.

    METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD
    7.
    发明申请
    METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD 有权
    薄膜形成方法和图案形成方法

    公开(公告)号:US20160314984A1

    公开(公告)日:2016-10-27

    申请号:US15134508

    申请日:2016-04-21

    Abstract: A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

    Abstract translation: 一种方法包括在基底上施加组合物以在基底上形成涂膜。 在氧气浓度小于1体积%且温度高于450℃和800℃以下的气氛中加热涂膜,以在基材上形成膜。 该组合物包含包含芳环的化合物。 涂膜加热时的气氛中的氧浓度优选为0.1体积%以下。 涂膜加热时的气氛温度优选为500℃以上,600℃以下。

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