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161 条记录 (耗时 0.018 秒)

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    5.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

    Polymers for photoresist and photoresist compositions using the same
    6.
    发明授权
    Polymers for photoresist and photoresist compositions using the same 失效
    用于光致抗蚀剂的聚合物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06987155B2

    公开(公告)日：2006-01-17

    申请号：US10394606

    申请日：2003-03-21

    申请人： Chi Hyeong Roh ,  Jae Chang Jung

    发明人： Chi Hyeong Roh ,  Jae Chang Jung

    IPC分类号： C08F126/06

    CPC分类号： C08F232/08 ,  G03F7/0395

    摘要： The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and l is 1 or 2.

    摘要翻译： 本发明涉及光致抗蚀剂单体，由其形成的聚合物和适用于使用DUV光源如KrF（249nm）和ArF（193nm））的光刻工艺的光致抗蚀剂组合物; EUV; VUV; 电子束 离子束 和X光片。 本发明的光致抗蚀剂单体由以下化学式1表示：其中m为1或2.本发明的聚合物包含衍生自化学式1的共聚单体的重复单元，优选与以下化学式2的单体一起 其中，R *为酸不稳定基团，l为1或2。

    Polymers for photoresist and photoresist compositions using the same
    7.
    发明授权
    Polymers for photoresist and photoresist compositions using the same 失效
    用于光致抗蚀剂和光致抗蚀剂组合物的聚合物

    公开(公告)号：US06569971B2

    公开(公告)日：2003-05-27

    申请号：US09383475

    申请日：1999-08-26

    申请人： Chi Hyeong Roh ,  Jae Chang Jung

    发明人： Chi Hyeong Roh ,  Jae Chang Jung

    IPC分类号： C08G8500

    CPC分类号： C08F232/08 ,  G03F7/0395

    摘要： The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF(249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and W is 1 or 2.

    摘要翻译： 本发明涉及光致抗蚀剂单体，由其形成的聚合物和适用于使用DUV光源如KrF（249nm）和ArF（193nm））的光刻工艺的光致抗蚀剂组合物; EUV; VUV; 电子束 离子束 和X光片。 本发明的光致抗蚀剂单体由以下化学式1表示：其中m为1或2.本发明的聚合物包含衍生自化学式1的共聚单体的重复单元，优选与以下化学式2的单体一起 其中，R *为酸不稳定基团，W为1或2。

    Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same
    9.
    发明授权
    Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 有权
    氧杂双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法

    公开(公告)号：US6150069A

    公开(公告)日：2000-11-21

    申请号：US311488

    申请日：1999-05-13

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： C07D493/08 ,  C08F22/06 ,  C08F32/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.

    摘要翻译： 本发明涉及氧杂双环化合物及其制备方法。 本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且 表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。

    Photoresist coating composition and method for forming fine contact of semiconductor device
    10.
    发明授权
    Photoresist coating composition and method for forming fine contact of semiconductor device 失效
    光刻胶涂料组合物和形成半导体器件精细接触的方法

    公开(公告)号：US08133547B2

    公开(公告)日：2012-03-13

    申请号：US11772578

    申请日：2007-07-02

    申请人： Jae Chang Jung

    发明人： Jae Chang Jung

    IPC分类号： C08F2/46

    CPC分类号： C09D133/08 ,  G03F7/40

    摘要： A coating composition containing a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.

    摘要翻译： 含有涂料基础树脂和C4-C10醇作为主要溶剂的涂料组合物以及形成半导体器件的微细接触的方法包括以下步骤：制备该涂料组合物，在具有 下层，用接触掩模进行曝光和显影工艺以形成用于在光致抗蚀剂膜上接触的光致抗蚀剂图案，以及在光致抗蚀剂图案上涂覆涂料组合物以形成涂膜。