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公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。
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公开(公告)号：US20060278888A1
公开(公告)日：2006-12-14
申请号：US11443155
申请日：2006-05-31
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a vertically-structured nitride semiconductor light emitting diode. The vertically-structured nitride semiconductor light emitting diode includes an n-type electrode; an n-type nitride semiconductor layer that is formed on the lower surface of the n-type electrode and on which surface texturing with a diffraction grating structure is formed, the diffraction grating structure composed of more than one line; an active layer that is formed on the lower surface of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the lower surface of the active layer; and a p-type electrode that is formed on the lower surface of the p-type nitride semiconductor layer.
摘要翻译： 本发明涉及一种垂直结构的氮化物半导体发光二极管。 垂直结构的氮化物半导体发光二极管包括n型电极; n型氮化物半导体层，其形成在n型电极的下表面上，并且在其上形成有衍射光栅结构的表面纹理，所述衍射光栅结构由多条线组成; 形成在所述n型氮化物半导体层的下表面上的有源层; p型氮化物半导体层，形成在有源层的下表面上; 以及形成在p型氮化物半导体层的下表面上的p型电极。
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公开(公告)号：US20060088950A1
公开(公告)日：2006-04-27
申请号：US11247935
申请日：2005-10-11
IPC分类号： H01L21/36
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。
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公开(公告)号：US20070018187A1
公开(公告)日：2007-01-25
申请号：US11490254
申请日：2006-07-21
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。
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公开(公告)号：US20070114552A1
公开(公告)日：2007-05-24
申请号：US11581003
申请日：2006-10-16
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.
摘要翻译： 垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。
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6.发明申请公开(公告)号：US20070126022A1
公开(公告)日：2007-06-07
申请号：US11634112
申请日：2006-12-06
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。
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7.发明申请Method of producing unsaturated acid in fixed-bed catalytic partial oxidation reactor with high efficiency 有权固定床催化部分氧化反应器高效生产不饱和酸的方法公开(公告)号：US20070073084A1
公开(公告)日：2007-03-29
申请号：US11483752
申请日：2006-07-10
IPC分类号： B01J8/04 , C07C51/16 , C07C51/235
CPC分类号： C07C45/34 , B01J8/0453 , B01J8/0457 , B01J8/067 , B01J2208/00212 , B01J2208/0053 , B01J2208/025 , B01J2219/0004 , C07C45/35 , C07C45/36 , C07C45/37 , C07C51/215 , C07C51/252 , C07C47/21 , C07C47/22 , C07C57/04
摘要： Disclosed is a process for producing unsaturated aldehydes and/or unsaturated acids from olefins or alkanes in a fixed bed shell-and-tube heat exchanger-type reactor by catalytic vapor phase oxidation. A heat exchanger-type reactor for use in such a process is also disclosed. In the process, at least one of the first-step reaction zone and the second-step reaction zone is divided into two or more shell spaces by at least one partition; each of the divided shell spaces is independently heat-controlled; a heat transfer medium in the first shell space of the first-step reaction zone or the first shell space of the second-step reaction zone has a temperature ranging from the lowest active temperature of a catalyst layer packed in a reaction tube corresponding to the first shell space of the first-step reaction zone or the first shell space of the second-step reaction zone to [the lowest active temperature+20° C.], when referring to the two or more shell spaces corresponding to the first-step reaction zone sequentially as the first shell space of the first-step reaction zone, the second shell space of the first-step reaction zone, . . . , the nth shell space of the first-step reaction zone, and the two or more shell spaces corresponding to the second-step reaction zone sequentially as the first shell space of the second-step reaction zone, the second shell space of the second-step reaction zone, . . . , the nth shell space of the second-step reaction zone; and the first shell space of the first-step reaction zone or the first shell space of the second-step reaction zone is controlled in such a manner that the first shell space provides a reactant conversion contribution per length as defined in Equation 1 or 2 of 1.2˜2.5.
摘要翻译： 公开了一种通过催化气相氧化在固定床管壳式热交换器型反应器中由烯烃或烷烃生产不饱和醛和/或不饱和酸的方法。 还公开了一种用于这种方法的热交换器型反应器。 在该过程中，至少一个第一步骤反应区和第二步反应区被至少一个隔板分成两个或多个壳层空间; 每个分开的壳空间是独立的热控制的; 在第一步骤反应区的第一壳体空间或第二阶段反应区的第一壳体空间中的传热介质的温度范围从填充在对应于第一步骤的反应管的反应管中的催化剂层的最低活性温度 当提及对应于第一步反应的两个或多个壳层空间时，第一步反应区的壳体空间或第二步反应区的第一壳空间为[最低活性温度+ 20℃] 作为第一步反应区的第一壳空间，第一步反应区的第二壳空间。 。 。 ，第一步反应区的第n个第<！ - SIPO
- >壳空间，以及对应于第二步反应区的两个或多个壳层空间依次作为第二步反应区的第一壳空间， 第二步反应区的第二个壳体空间。 。 。 ，第二步反应区的第n个壳空间; 并且以这样的方式控制第一步骤反应区或第二阶段反应区的第一壳层空间的第一壳层空间，使得第一壳空间提供如式1或2中定义的每个长度的反应物转化贡献 1.2〜2.5。 -
公开(公告)号：US20060188847A1
公开(公告)日：2006-08-24
申请号：US11344427
申请日：2006-01-31
申请人： Kwang Park , Seok Choi
发明人： Kwang Park , Seok Choi
IPC分类号： A61C8/00
CPC分类号： A61C8/0022
摘要： Disclosed herein is a dental rescue implant implanted into an alveolar bone for forming a root of an artificial tooth. The dental rescue implant includes: a wide sectional body part having a sectional diameter of 6.5 mm to 8 mm, greater than a sectional diameter of 6 mm of a typical implant body part, whereby the wide sectional body part can be implanted directly into the corresponding alveolar bone without refilling a damaged part with a bone substitutive material when implant surgery ends in failure; and a wide screw thread formed on the outer periphery of the wide sectional body part, the wide screw thread being formed at 1˜1.75 pitch intervals, whereby the wide sectional body part is implanted into the alveolar bone with relatively small resistance. The implant can be directly implanted into the alveolar bone without refilling a damaged part with a substitutive material even though a molar teeth part is lost or implant surgery ends in a failure by complex factors.
摘要翻译： 本文公开了植入牙槽骨中以形成人造牙根部的牙科救援植入物。 牙齿救援植入物包括：具有6.5mm至8mm的截面直径的大截面体部分，大于典型植入物主体部分的截面直径6mm，由此宽的主体部分可以直接植入相应的 当植入手术失败时，牙槽骨不用骨替代材料重新填充受损部分; 以及形成在宽截面体部分的外周上的宽螺纹，宽螺纹以1〜1.75个间距形成，由此将宽的主体部分以相对较小的阻力注入牙槽骨中。 植入物可以直接植入牙槽骨，而不用补充材料重新填充受损部分，即使磨牙部分丢失或植入手术由于复杂因素而导致失败。
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9.发明申请Nitride semiconductor light emitting device and method of manufacturing the same 有权氮化物半导体发光器件及其制造方法公开(公告)号：US20050077536A1
公开(公告)日：2005-04-14
申请号：US10837780
申请日：2004-05-04
CPC分类号： H01L33/32 , H01L33/025
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.
摘要翻译： 这里公开了一种氮化物半导体发光器件。 氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物 形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极 氮化物半导体层和形成在反掺杂区域上的p侧电极。 通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。
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公开(公告)号：US20060263746A1
公开(公告)日：2006-11-23
申请号：US11438008
申请日：2006-05-19
申请人： Kwang Park , Seok Choi , Kyoung Ryoo
发明人： Kwang Park , Seok Choi , Kyoung Ryoo
IPC分类号： A61C3/02
CPC分类号： A61C3/02 , A61B2090/036 , A61C8/0089
摘要： Disclosed herein is a drill for operating implant which allows a user to easily check abrasion of a drill blade with naked eyes. The drill for operating implant includes: a drill body; a drill blade formed on the drill body for perforating an implantation place of the implant when the drill body is rotated; and, an abrasion discrimination part formed at least one of the drill body or the drill blade for allowing a user to discriminate abrasion of the drill blade.
摘要翻译： 本文公开了一种用于操作植入物的钻头，其允许使用者用肉眼容易地检查钻刀的磨损。 用于操作植入物的钻头包括：钻体; 形成在所述钻体上的钻刀，用于在所述钻体旋转时对所述植入物的植入位置进行穿孔; 以及形成钻头主体或钻头刀片中的至少一个的磨损鉴别部件，用于允许使用者区分钻刀的磨损。
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