利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.028 秒)

    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION
    1.
    发明申请
    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION 审中-公开
    具有低功耗的半导体气体传感器

    公开(公告)号：US20110138882A1

    公开(公告)日：2011-06-16

    申请号：US12965433

    申请日：2010-12-10

    申请人： Seung Eon Moon ,  Jong Hyurk Park ,  Jae Woo Lee ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Seung Eon Moon ,  Jong Hyurk Park ,  Jae Woo Lee ,  Hong Yeol Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： G01N33/00 ,  H01L21/368 ,  B82Y15/00

    CPC分类号： G01N27/12

    摘要： Provided are a structure and operating method of a semiconductor gas sensor having low power consumption. The semiconductor gas sensor is adapted to adsorb gas to a low-dimensional semiconductor nanomaterial at room temperature, output a change in resistance of the low-dimensional semiconductor nanomaterial, apply power to a heater, desorb the gas adsorbed to the low-dimensional semiconductor nanomaterial, and return the resistance of the low-dimensional semiconductor nanomaterial back to initial resistance. The semiconductor gas sensor senses the gas at room temperature using the low-dimensional semiconductor nanomaterial having a high-sensitivity characteristic at room temperature, and drives the heater only when the adsorbed gas is desorbed. Thereby, it is possible to improve a gas sensing characteristic, reduce power consumption, and provide a rapid response speed.

    摘要翻译： 提供具有低功耗的半导体气体传感器的结构和操作方法。 半导体气体传感器适于在室温下将气体吸附到低维半导体纳米材料上，输出低维半导体纳米材料的电阻变化，向加热器施加电力，解吸吸附在低维半导体纳米材料上的气体 ，并将低维半导体纳米材料的电阻恢复到初始电阻。 半导体气体传感器使用在室温下具有高灵敏度特性的低维半导体纳米材料在室温下感测气体，仅在吸附气体解吸时驱动加热器。 由此，能够提高气体感测特性，降低功耗，提供快速的响应速度。

    APPARATUS FOR GENERATING DIRECTIONAL SOUND AND MOBILE TERMINAL USING THE SAME
    2.
    发明申请
    APPARATUS FOR GENERATING DIRECTIONAL SOUND AND MOBILE TERMINAL USING THE SAME 审中-公开
    用于产生方向声和移动终端的装置

    公开(公告)号：US20090154736A1

    公开(公告)日：2009-06-18

    申请号：US12240128

    申请日：2008-09-29

    申请人： Sung Q Lee ,  Jae Woo Lee ,  Hye Jin Kim ,  Sang Kyun Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Sung Q Lee ,  Jae Woo Lee ,  Hye Jin Kim ,  Sang Kyun Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H04R5/02

    CPC分类号： H04R1/323 ,  H04R3/12 ,  H04R2201/403 ,  H04R2499/11

    摘要： Provided are an apparatus for generating directional sound and a mobile terminal using the apparatus. The apparatus includes a signal controller for dividing and generating a reference signal into signals having three or more levels and phases, a first signal processor and a second signal processor for controlling a first signal and a second signal having levels and phases canceling each other among the signals generated from the signal controller, a central signal processor for controlling a signal having the same level and phase as the reference signal among the signals generated from the signal controller, a first speaker array and a second speaker array for converting signals output from the first signal processor and the second signal processor into sound signals and outputting the sound signals, and a central speaker for converting a signal output from the central signal processor into a sound signal and outputting the sound signal, and arranged between the first speaker array and the second speaker array.

    摘要翻译： 提供了一种用于产生定向声音的装置和使用该装置的移动终端。 该装置包括信号控制器，用于将参考信号分成并产生具有三个或多个电平和相位的信号;第一信号处理器和第二信号处理器，用于控制第一信号;以及第二信号， 从信号控制器产生的信号，用于控制与信号控制器产生的信号中具有与基准信号相同的电平和相位的信号的中央信号处理器，第一扬声器阵列和第二扬声器阵列，用于转换从第一 信号处理器和第二信号处理器转换成声音信号并输出​​声音信号;以及中央扬声器，用于将从中央信号处理器输出的信号转换为声音信号并输出​​声音信号，并且布置在第一扬声器阵列与第二扬声器阵列之间 扬声器阵列。

    METHOD OF FABRICATING NANO-WIRE ARRAY
    6.
    发明申请
    METHOD OF FABRICATING NANO-WIRE ARRAY 失效
    制作纳米线阵列的方法

    公开(公告)号：US20080233675A1

    公开(公告)日：2008-09-25

    申请号：US11927881

    申请日：2007-10-30

    申请人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    发明人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0673 ,  H01L21/76289 ,  H01L27/1225 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  Y10S977/762

    摘要： Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译： 提供一种制造纳米线阵列的方法，包括以下步骤：在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域，然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线，其间插入图案化的纳米线; 形成多个漏电极，所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个，并且形成多个源电极，所述多个源电极的一端连接到所述源电极线并接触所述纳米线， 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域，以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此，即使在纳米线与电极线的不平行结构中，大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

    Micro-electromechanical systems (MEMS) microphone and method of manufacturing the same
    8.
    发明授权
    Micro-electromechanical systems (MEMS) microphone and method of manufacturing the same 有权
    微机电系统（MEMS）麦克风及其制造方法相同

    公开(公告)号：US08175300B2

    公开(公告)日：2012-05-08

    申请号：US12509411

    申请日：2009-07-24

    申请人： Jae Woo Lee ,  Kang Ho Park ,  Jong Dae Kim

    发明人： Jae Woo Lee ,  Kang Ho Park ,  Jong Dae Kim

    IPC分类号： H04R25/00

    CPC分类号： B81C1/00182 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0285 ,  H04R3/00 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

    摘要： Provided are a micro-electromechanical systems (MEMS) microphone and a method of manufacturing the same. A manufacturing process is simplified compared to a conventional art using both upper and lower substrate processes. Since defects which may occur during manufacturing are reduced due to the simplified manufacturing process, the manufacturing throughput is improved, and since durability of the MEMS microphone is improved, system stability against the external environment is improved.

    摘要翻译： 提供了一种微机电系统（MEMS）麦克风及其制造方法。 与使用上基板工艺和下基板工艺的常规技术相比，制造工艺简化。 由于制造过程中可能发生的缺陷由于简化的制造过程而降低，所以提高了制造生产能力，并且由于提高了MEMS麦克风的耐久性，提高了对外部环境的系统稳定性。

    Method of fabricating nano-wire array
    9.
    发明授权
    Method of fabricating nano-wire array 失效
    制造纳米线阵列的方法

    公开(公告)号：US07846786B2

    公开(公告)日：2010-12-07

    申请号：US11927881

    申请日：2007-10-30

    申请人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    发明人： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/06 ,  H01L27/088

    CPC分类号： H01L29/0673 ,  H01L21/76289 ,  H01L27/1225 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  Y10S977/762

    摘要： Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译： 提供一种制造纳米线阵列的方法，包括以下步骤：在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域，然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线，其间插入图案化的纳米线; 形成多个漏电极，所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个，并且形成多个源电极，所述多个源电极的一端连接到所述源电极线并接触所述纳米线， 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域，以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此，即使在纳米线与电极线的不平行结构中，大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。