Security system and method using measurement of acoustic field variation
    6.
    发明授权
    Security system and method using measurement of acoustic field variation 有权
    使用声场变化测量的安全系统和方法

    公开(公告)号:US08797407B2

    公开(公告)日:2014-08-05

    申请号:US12878414

    申请日:2010-09-09

    摘要: A security system and a method of determining whether there is an intrusion are provided. A correlation between sound signals obtained from a sound source generating device and a sound-field variation measuring device is used to measure a acoustic field in a certain space. A difference between an initially set acoustic field and a changed acoustic field is used to determine whether there is an intruding object in a certain space. The security system includes a sound source generating device for generating a sound source; and a sound-field variation measuring device for measuring a acoustic field formed by the sound source, wherein an initially set acoustic field is compared with the measured acoustic field to determine whether there is an intrusion.

    摘要翻译: 提供一种确定是否存在入侵的安全系统和方法。 使用从声源发生装置获取的声音信号和声场变化测量装置之间的相关性来测量某个空间中的声场。 使用初始设置的声场和改变的声场之间的区别来确定在某个空间中是否存在入侵物体。 安全系统包括用于产生声源的声源产生装置; 以及用于测量由声源形成的声场的声场变化测量装置,其中将初始设置的声场与所测量的声场进行比较以确定是否存在入侵。

    Piezoelectric speaker and method of manufacturing the same
    7.
    发明授权
    Piezoelectric speaker and method of manufacturing the same 有权
    压电扬声器及其制造方法

    公开(公告)号:US08712079B2

    公开(公告)日:2014-04-29

    申请号:US12507364

    申请日:2009-07-22

    IPC分类号: H04R25/00 H04R1/20

    摘要: A piezoelectric speaker and a method of manufacturing the same that can obtain a high sound pressure using a piezoelectric thin film are provided. The piezoelectric speaker includes a piezoelectric thin film, electrodes formed on an upper surface or upper and lower surfaces of the piezoelectric thin film, a damping material layer formed on the lower surface of the piezoelectric thin film, and a frame attached around at least one of the piezoelectric thin film and the damping material layer using an adhesive.

    摘要翻译: 提供一种使用压电薄膜可以获得高声压的压电扬声器及其制造方法。 压电扬声器包括压电薄膜,形成在压电薄膜的上表面或上表面和下表面上的电极,形成在压电薄膜的下表面上的阻尼材料层和围绕至少一个 压电薄膜和使用粘合剂的阻尼材料层。

    Semiconductor memory device having a redundancy area
    9.
    发明授权
    Semiconductor memory device having a redundancy area 有权
    具有冗余区域的半导体存储器件

    公开(公告)号:US08614925B2

    公开(公告)日:2013-12-24

    申请号:US12814776

    申请日:2010-06-14

    IPC分类号: G11C7/00

    CPC分类号: G11C29/785 G11C29/808

    摘要: Provided is a semiconductor memory device. The semiconductor memory includes a main area and a redundancy area. The main area includes a plurality of memory blocks sharing a write bit line and a read bit line. The redundancy area includes a plurality of redundancy memory blocks sharing a redundancy write bit line and a redundancy read bit line. The redundancy area is provided to replace a component in the main area having a defect.

    摘要翻译: 提供了一种半导体存储器件。 半导体存储器包括主区域和冗余区域。 主区域包括共享写入位线和读取位线的多个存储器块。 冗余区域包括共享冗余写位线和冗余读位线的多个冗余存储块。 提供冗余区域以替换具有缺陷的主区域中的部件。