摘要:
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.
摘要:
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.
摘要:
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.
摘要:
Methods of forming a semiconductor device can be provided by simultaneously forming a plurality of mask patterns using self-aligned reverse patterning, including respective mask pattern elements having different widths.
摘要:
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.
摘要:
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.
摘要:
Methods of forming a semiconductor device can be provided by simultaneously forming a plurality of mask patterns using self-aligned reverse patterning, including respective mask pattern elements having different widths.
摘要:
In searching for a phone number in a wireless terminal, image search mode is entered when an image search is selected in phone book search mode and the image data stored in a phone book are displayed. When a SEND key is pressed continuously for a predetermined time, a call is sent to a phone number stored in the phone book associated with the selected image data. Whenever the SEND key is pressed for a predetermined time, phone numbers stored in the phone book associated with the selected image data are sequentially displayed. When image rearrangement is selected while image data are displayed, the image data are classified into moving and still images on a group-by-group basis and rearranged. When selected image view is selected while image data are displayed, the image data are enlarged and displayed, and image data stored in a corresponding folder are displayed.
摘要:
A storage system is disclosed and related methods of reading/writing data are disclosed. The storage system includes a main data storage medium, and first and second buffers storing data to be stored on the main data storage medium, as well as a controller defining a data I/O path. The data I/O path may be defined in relation to a detected operating state of the main data storage medium.
摘要:
A method of sharing a preference channel in a digital broadcasting reception terminal includes registering a phone book group to which at least one preference channel and information on the preference channel are transmitted; if digital broadcasting data of the registered preference channel is received, detecting information on the preference channel from an electronic program guide (EPG) stored in advance; and transmitting the detected information on the preference channel to terminals in the phone book group in realtime