摘要:
Provided are semiconductor devices and methods of forming the same. The semiconductor devices include a substrate further including a hydrogen implantation layer and a gate structure formed on the hydrogen implantation layer to include a first insulating layer, a charge storage layer, a second insulating layer and a conductive layer.
摘要:
A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.
摘要:
A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.
摘要:
A one transistor DRAM device includes: a substrate with an insulating layer, a first semiconductor layer provided on the insulating layer and including a first source region and a first region which are in contact with the insulating layer and a first floating body between the first source region and the first drain region, a first gate pattern to cover the first floating body, a first interlayer dielectric to cover the first gate pattern, a second semiconductor layer provided on the first interlayer dielectric and including a second source region and a second drain region which are in contact with the first interlayer dielectric and a second floating body between the second source region and the second drain region, and a second gate pattern to cover the second floating body.
摘要:
A NAND flash memory device includes a plurality of stacked semiconductor layers, device isolation layer patterns disposed in predetermined regions of each of the plurality of semiconductor layers, the device isolation layers defining active regions, source and drain impurity regions in the active regions, a source line plug structure electrically connecting the source impurity regions, and a bit-line plug structure electrically connecting the drain impurity regions, wherein the source impurity regions are electrically connected to the semiconductor layers.
摘要:
Methods of forming a NAND-type nonvolatile memory device include: forming first common drains and first common sources alternatively in an active region which is defined in a semiconductor substrate and extends one direction, forming a first insulating layer covering an entire surface of the semiconductor substrate, patterning the first insulating layer to form seed contact holes which are arranged at regular distance and expose the active region, forming a seed contact structure filling each of the seed contact holes and a semiconductor layer disposed on the first insulating layer and contacting the seed contact structures, patterning the semiconductor layer to form a semiconductor pattern which extends in the one direction and is disposed over the active region, forming second common drains and second common sources disposed alternatively in the semiconductor pattern in the one direction, forming a second insulating layer covering an entire surface of the semiconductor substrate, forming a source line pattern continuously penetrating the second insulating layer, the semiconductor pattern and the first insulating layer, the source line pattern being connected with the first and second common sources, wherein a grain boundary of the semiconductor layer is positioned at a center between the one pair of seed contact structures adjacent to each other, and is positioned over the first common drain or the first common source.
摘要:
Provided is a NAND-type nonvolatile memory device and method of forming the same. In the method, a plurality of cell layers are stacked on a semiconductor substrate. Seed contact holes for forming a semiconductor pattern included in a stacked cell are formed at regular distance. At this time, the seed contact holes are arranged such that a bit line plug or a source line pattern is disposed at a center between one pair of seed contact holes adjacent to each other.
摘要:
A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate.
摘要:
A driving method of a three-dimensional memory device having a plurality of layers is provided. One of the layers is selected. A well of the selected layer is biased with a first well voltage. A word line voltage is applied to a selected word line of the selected layer. A well of an unselected layer is biased with a second well voltage higher than the first well voltage.
摘要:
A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate.